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SI4931DY-T1-GE3

SI4931DY-T1-GE3
Mfr. #:
SI4931DY-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4931DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4931DY-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
आईसी चिप्स
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI4931DY-GE3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
दोहोरो
FET-प्रकार
2 P-Channel (Dual)
पावर-अधिकतम
1.1W
ट्रान्जिस्टर-प्रकार
2 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
12V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
6.7A
Rds-on-max-Id-Vgs
18 mOhm @ 8.9A, 4.5V
Vgs-th-max-Id
1V @ 350μA
गेट-चार्ज-Qg-Vgs
52nC @ 4.5V
Pd-शक्ति-डिसिपेशन
1.1 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
155 ns
उदय-समय
46 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
6.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 12 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
18 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
230 ns
सामान्य-टर्न-अन-डिले-समय
25 ns
च्यानल-मोड
वृद्धि
Tags
SI4931DY-T, SI4931, SI493, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
DUAL P-CH MOSFET SO-8 12V 18MOHM @ 4.5V- LEAD(PB) AND HALOGEN FREE
***ical
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
***ark
Dual P-Channel 12-V (D-S) Mosfet
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI4931DY-T1-GE3
DISTI # V72:2272_09216664		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant		600
  • 500:$0.6798
  • 250:$0.7742
  • 100:$0.7825
  • 25:$0.9702
  • 10:$0.9815
  • 1:$1.1463
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		26020In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		26020In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		22500In Stock
  • 2500:$0.4500
SI4931DY-T1-GE3
DISTI # 31041114		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant		600
  • 500:$0.6798
  • 250:$0.7742
  • 100:$0.7825
  • 25:$0.9702
  • 13:$0.9815
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$2.5240
  • 5000:$1.9415
  • 7500:$1.5453
  • 12500:$1.3055
  • 25000:$1.2019
  • 62500:$1.1649
  • 125000:$1.1301
SI4931DY-T1-GE3
DISTI # SI4931DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5999
  • 5000:$0.5819
  • 10000:$0.5579
  • 15000:$0.5429
  • 25000:$0.5279
SI4931DY-T1-GE3
DISTI # 15R5125		Vishay IntertechnologiesDUAL P-CHANNEL 12-V (D-S) MOSFET0
  • 1:$0.8410
  • 1000:$0.8070
  • 2000:$0.7340
  • 4000:$0.6600
  • 6000:$0.6360
  • 10000:$0.6210
SI4931DY-T1-GE3
DISTI # 781-SI4931DY-GE3		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8
RoHS: Compliant		7375
  • 1:$1.4500
  • 10:$1.1900
  • 100:$0.9110
  • 500:$0.7840
  • 1000:$0.6190
  • 2500:$0.5780
SI4931DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 6.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 560
    SI4931DY-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8
    RoHS: Compliant    		Americas -
      SI4931DY-T1-GE3
      DISTI # C1S803601969446      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
      RoHS: Compliant      		600
      • 250:$0.7742
      • 100:$0.7825
      • 25:$0.9702
      • 10:$0.9815
      छवि भाग # विवरण
      SI4931DY-T1-E3

      Mfr.#: SI4931DY-T1-E3

      OMO.#: OMO-SI4931DY-T1-E3

      		 MOSFET -12V Vds 8V Vgs SO-8
      SI4931DY-T1-GE3

      Mfr.#: SI4931DY-T1-GE3

      OMO.#: OMO-SI4931DY-T1-GE3

      		 MOSFET -12V Vds 8V Vgs SO-8
      SI4931DY-T1-GE3

      Mfr.#: SI4931DY-T1-GE3

      OMO.#: OMO-SI4931DY-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
      SI4931DY-T1-E3-CUT TAPE

      Mfr.#: SI4931DY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4931DY-T1-E3-CUT-TAPE-1190

      		 नयाँ र मौलिक
      SI4931DY

      Mfr.#: SI4931DY

      OMO.#: OMO-SI4931DY-1190

      		 नयाँ र मौलिक
      SI4931DY-E3

      Mfr.#: SI4931DY-E3

      OMO.#: OMO-SI4931DY-E3-1190

      		 नयाँ र मौलिक
      SI4931DY-T1-E3

      Mfr.#: SI4931DY-T1-E3

      OMO.#: OMO-SI4931DY-T1-E3-VISHAY

      		 MOSFET 2P-CH 12V 6.7A 8-SOIC
      SI4931DY-T1GE3

      Mfr.#: SI4931DY-T1GE3

      OMO.#: OMO-SI4931DY-T1GE3-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3500
      मात्रा प्रविष्ट गर्नुहोस्:
      SI4931DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.६८
      US$ ०.६८
      10
      US$ ०.६४
      US$ ६.४१
      100
      US$ ०.६१
      US$ ६०.७५
      500
      US$ ०.५७
      US$ २८६.८५
      1000
      US$ ०.५४
      US$ ५४०.००
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