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FQD2N60CTF

FQD2N60CTF
Mfr. #:
FQD2N60CTF
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 600V N-Channel Adv Q-FET C-Series
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FQD2N60CTF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
1.9 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.7 Ohms
Vgs - गेट-स्रोत भोल्टेज:
30 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
2.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
2.39 mm
लम्बाइ:
6.73 mm
शृङ्खला:
FQD2N60C
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
MOSFET
चौडाइ:
6.22 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
5 S
पतन समय:
28 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
25 ns
कारखाना प्याक मात्रा:
2000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
24 ns
सामान्य टर्न-अन ढिलाइ समय:
9 ns
भाग # उपनाम:
FQD2N60CTF_NL
एकाइ वजन:
0.009184 oz
Tags
FQD2N60CTF, FQD2N60CT, FQD2N60C, FQD2N60, FQD2N6, FQD2N, FQD2, FQD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:1.9mA; On Resistance, Rds(on):3.6ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
भाग # Mfg। विवरण स्टक मूल्य
FQD2N60CTF
DISTI # FQD2N60CTF-ND		ON SemiconductorMOSFET N-CH 600V 1.9A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Limited Supply - Call
    FQD2N60CTF_F080
    DISTI # FQD2N60CTF_F080-ND    		ON SemiconductorMOSFET N-CH 600V 1.9A DPAK
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      FQD2N60CTF
      DISTI # FQD2N60CTF      		ON SemiconductorTRANS MOSFET N-CH 600V 1.9A 3PIN DPAK - Bulk (Alt: FQD2N60CTF)
      RoHS: Compliant
      Min Qty: 1000
      Container: Bulk      		Americas - 0
      • 10000:$0.3079
      • 5000:$0.3159
      • 3000:$0.3199
      • 2000:$0.3239
      • 1000:$0.3259
      FQD2N60CTF
      DISTI # 512-FQD2N60CTF      		ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
      RoHS: Compliant      		0
        FQD2N60CTF_F080
        DISTI # 512-FQD2N60CTF-F080        		ON SemiconductorMOSFET Trans MOS N-Ch 600V 1.9A 3-Pin 2+Tab
        RoHS: Compliant        		0
          FQD2N60CTFFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant          		1010
          • 1000:$0.3300
          • 500:$0.3500
          • 100:$0.3600
          • 25:$0.3800
          • 1:$0.4100
          FQD2N60CTFFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant          		6000
            FQD2N60CTFFairchild Semiconductor Corporation600V,1.9A,N-Ch MOSFET1150
            • 1:$0.5100
            • 100:$0.3600
            • 500:$0.2700
            • 1000:$0.2600
            छवि भाग # विवरण
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            FQD2N60CTF

            Mfr.#: FQD2N60CTF

            OMO.#: OMO-FQD2N60CTF

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            FQD2N50

            Mfr.#: FQD2N50

            OMO.#: OMO-FQD2N50-1190

            		 नयाँ र मौलिक
            FQD2N50TM-NL

            Mfr.#: FQD2N50TM-NL

            OMO.#: OMO-FQD2N50TM-NL-1190

            		 नयाँ र मौलिक
            FQD2N60C FQD2N60 2N60D

            Mfr.#: FQD2N60C FQD2N60 2N60D

            OMO.#: OMO-FQD2N60C-FQD2N60-2N60D-1190

            		 नयाँ र मौलिक
            FQD2N60CTM

            Mfr.#: FQD2N60CTM

            OMO.#: OMO-FQD2N60CTM-ON-SEMICONDUCTOR

            		 MOSFET N-CH 600V 1.9A DPAK
            FQD2N60CTM-NL

            Mfr.#: FQD2N60CTM-NL

            OMO.#: OMO-FQD2N60CTM-NL-1190

            		 नयाँ र मौलिक
            FQD2N65C

            Mfr.#: FQD2N65C

            OMO.#: OMO-FQD2N65C-1190

            		 नयाँ र मौलिक
            FQD2N90TM,FQD2N90,D2N90,

            Mfr.#: FQD2N90TM,FQD2N90,D2N90,

            OMO.#: OMO-FQD2N90TM-FQD2N90-D2N90--1190

            		 नयाँ र मौलिक
            FQD2N60CTM_WS

            Mfr.#: FQD2N60CTM_WS

            OMO.#: OMO-FQD2N60CTM-WS-126

            		 IGBT Transistors MOSFET 600V 1.9A NCH MOSFET
            उपलब्धता
            स्टक:
            Available
            अर्डर मा:
            4000
            मात्रा प्रविष्ट गर्नुहोस्:
            FQD2N60CTF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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