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SI4288DY-T1-GE3
SI4288DY-T1-GE3
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SI4288DY-T1-GE3 DatasheetSI4288DY-T1-GE3 Datasheet (P4-P6)SI4288DY-T1-GE3 Datasheet (P7-P8)

SI4288DY-T1-GE3

Mfr. #:
SI4288DY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 40V Vds 20V Vgs SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4288DY-T1-GE3 डाटा पाना
ECAD Model:

उपलब्धता

स्टक:
Available
अर्डर मा:
1988
मात्रा प्रविष्ट गर्नुहोस्:
SI4288DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.३९
US$ १.३९
10
US$ १.१५
US$ ११.५०
100
US$ ०.८८
US$ ८८.३०
500
US$ ०.७६
US$ ३८०.००
1000
US$ ०.६०
US$ ५९९.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
9.2 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
20 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
10 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
3.1 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI4
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
35 S
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
9 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
16 ns
सामान्य टर्न-अन ढिलाइ समय:
7 ns
भाग # उपनाम:
SI4288DY-GE3
एकाइ वजन:
0.017870 oz
Tags
SI4288, SI428, SI42, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 40V 9.2A 8-Pin SOIC T/R
***ical
Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:9.2A; On Resistance Rds(On):0.0165Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V Rohs Compliant: Yes
***nell
MOSFET, NN CH, W/D, 40V, 9.2A, SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.0165ohm; Power Dissipation Pd:3.1W
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI4288DY-T1-GE3
DISTI # V72:2272_09215547		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		117
  • 100:$0.8787
  • 25:$1.0268
  • 10:$1.1409
  • 1:$1.5129
SI4288DY-T1-GE3
DISTI # V36:1790_09215547		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.5454
  • 1250000:$0.5456
  • 250000:$0.5602
  • 25000:$0.5841
  • 2500:$0.5880
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20634In Stock
  • 1000:$0.6489
  • 500:$0.8219
  • 100:$0.9950
  • 10:$1.2760
  • 1:$1.4300
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20634In Stock
  • 1000:$0.6489
  • 500:$0.8219
  • 100:$0.9950
  • 10:$1.2760
  • 1:$1.4300
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		17500In Stock
  • 12500:$0.5376
  • 5000:$0.5586
  • 2500:$0.5880
SI4288DY-T1-GE3
DISTI # 32655952		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		5000
  • 2500:$0.5569
SI4288DY-T1-GE3
DISTI # 30667634		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		117
  • 12:$1.5129
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: SI4288DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 5000
  • 25000:€0.4979
  • 15000:€0.5209
  • 10000:€0.5889
  • 5000:€0.7259
  • 2500:€1.0129
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: SI4288DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4288DY-T1-GE3
    DISTI # SI4288DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4288DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.5128
    • 15000:$0.5270
    • 10000:$0.5420
    • 5000:$0.5650
    • 2500:$0.5822
    SI4288DY-T1-GE3
    DISTI # 70AC6505    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 70AC6505)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 500:$0.9510
    • 250:$1.0300
    • 100:$1.1100
    • 50:$1.2200
    • 25:$1.3400
    • 10:$1.4500
    • 1:$1.7500
    SI4288DY-T1-GE3
    DISTI # 65T1693    		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V0
    • 10000:$0.5080
    • 6000:$0.5200
    • 4000:$0.5400
    • 2000:$0.6000
    • 1000:$0.6600
    • 1:$0.6880
    SI4288DY-T1-GE3
    DISTI # 70AC6505    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 40V, 9.2A, 150DEG C,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.2A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes2487
    • 500:$0.6160
    • 50:$0.6670
    • 100:$0.6670
    • 250:$0.6670
    • 1:$0.7280
    • 10:$0.7280
    • 25:$0.7280
    SI4288DY-T1-GE3.
    DISTI # 30AC0152    		Vishay IntertechnologiesTransistor Polarity:Dual N Channel,Continuous Drain Current Id:9.2A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:3.1W,Product Range:-RoHS Compliant: Yes0
    • 10000:$0.5080
    • 6000:$0.5200
    • 4000:$0.5400
    • 2000:$0.6000
    • 1000:$0.6600
    • 1:$0.6880
    SI4288DY-T1-GE3
    DISTI # 70459532    		Vishay Siliconix40 Volts 9.2 Amps 3.1 Watts
    RoHS: Compliant    		0
    • 2500:$0.8500
    • 5000:$0.8050
    SI4288DY-T1-GE3
    DISTI # 78-SI4288DY-T1-GE3    		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs SO-8
    RoHS: Compliant    		155
    • 1:$1.3900
    • 10:$1.1500
    • 100:$0.8830
    • 500:$0.7600
    • 1000:$0.5990
    • 2500:$0.5590
    • 5000:$0.5310
    • 10000:$0.5120
    SI4288DY-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 22500
      SI4288DY-T1-GE3
      DISTI # 2056718      		Vishay IntertechnologiesMOSFET, NN CH, W/D, 40V, 9.2A, SO82267
      • 500:£0.5870
      • 250:£0.6340
      • 100:£0.6810
      • 10:£0.9380
      • 1:£1.2200
      SI4288DY-T1-GE3
      DISTI # XSKDRABV0045272      		Vishay Intertechnologies 
      RoHS: Compliant      		7500 in Stock0 on Order
      • 7500:$0.6960
      • 2500:$0.7457
      SI4288DY-T1-GE3
      DISTI # 2056718      		Vishay IntertechnologiesMOSFET, NN CH, W/D, 40V, 9.2A, SO8
      RoHS: Compliant      		1290
      • 2500:$1.1300
      • 500:$1.1500
      • 100:$1.3300
      • 10:$1.7300
      • 1:$2.0900
      SI4288DY-T1-GE3
      DISTI # 2056718RL      		Vishay IntertechnologiesMOSFET, NN CH, W/D, 40V, 9.2A, SO8
      RoHS: Compliant      		0
      • 2500:$1.1300
      • 500:$1.1500
      • 100:$1.3300
      • 10:$1.7300
      • 1:$2.0900
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