SCT3022KLHRC11

SCT3022KLHRC11
Mfr. #:
SCT3022KLHRC11
निर्माता:
Rohm Semiconductor
विवरण:
MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SCT3022KLHRC11 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SCT3022KLHRC11 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ROHM अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247N-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
आईडी - निरन्तर ड्रेन वर्तमान:
95 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
22 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.7 V
Vgs - गेट-स्रोत भोल्टेज:
- 4 V, 22 V
Qg - गेट चार्ज:
178 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
427 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
SCT3x
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
ROHM अर्धचालक
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
14.2 S
पतन समय:
28 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
44 ns
कारखाना प्याक मात्रा:
30
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
67 ns
सामान्य टर्न-अन ढिलाइ समय:
29 ns
Tags
SCT3022K, SCT302, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
भाग # Mfg। विवरण स्टक मूल्य
SCT3022KLHRC11
DISTI # SCT3022KLHRC11-ND
ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 25:$101.6896
  • 10:$104.5340
  • 1:$110.2200
SCT3022KLHRC11
DISTI # SCT3022KLHRC11
ROHM SemiconductorTransistor MOSFET N-CH 1200V 95A 3-Pin TO-247N Tube (Alt: SCT3022KLHRC11)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€79.1900
  • 500:€84.8900
  • 100:€87.9900
  • 50:€91.3900
  • 25:€94.9900
  • 10:€98.9900
  • 1:€107.9900
SCT3022KLHRC11
DISTI # 02AH4680
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$88.4100
  • 50:$94.0500
  • 25:$95.4400
  • 10:$96.8800
  • 5:$99.7500
  • 1:$102.5000
SCT3022KLHRC11
DISTI # 755-SCT3022KLHRC11
ROHM SemiconductorMOSFET 1200V 95A 427W SIC 22mOhm TO-247N
RoHS: Compliant
0
  • 1:$113.7700
  • 5:$111.6800
  • 10:$106.6600
  • 25:$101.7000
SCT3022KLHRC11
DISTI # TMOS2738
ROHM SemiconductorSiC N-CH 1200V 95A 22mOhm
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$133.0200
SCT3022KLHRC11
DISTI # 3052186
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W0
  • 10:£77.5900
  • 5:£82.2000
  • 1:£86.8100
SCT3022KLHRC11ROHM SemiconductorMOSFET 1200V 95A 427W SIC 22mOhm TO-247N
RoHS: Compliant
Americas -
    SCT3022KLHRC11
    DISTI # 3052186
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 95A, 175DEG C, 427W
    RoHS: Compliant
    0
    • 1:$155.0600
    छवि भाग # विवरण
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11

    MOSFET Nch 1200V 95A SiC TO-247N
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11

    MOSFET 650V 93A 339W SIC 22mOhm TO-247N
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11

    MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11

    MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
    SCT3022KLGC11

    Mfr.#: SCT3022KLGC11

    OMO.#: OMO-SCT3022KLGC11-ROHM-SEMI

    SCT3022KL IS AN SIC (SILICON CAR
    SCT3022ALGC11

    Mfr.#: SCT3022ALGC11

    OMO.#: OMO-SCT3022ALGC11-ROHM-SEMI

    MOSFET NCH 650V 93A TO247N
    SCT3022KL

    Mfr.#: SCT3022KL

    OMO.#: OMO-SCT3022KL-1190

    नयाँ र मौलिक
    SCT3022ALHRC11

    Mfr.#: SCT3022ALHRC11

    OMO.#: OMO-SCT3022ALHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    SCT3022KLHRC11

    Mfr.#: SCT3022KLHRC11

    OMO.#: OMO-SCT3022KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1000
    मात्रा प्रविष्ट गर्नुहोस्:
    SCT3022KLHRC11 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ११३.७७
    US$ ११३.७७
    5
    US$ १११.६८
    US$ ५५८.४०
    10
    US$ १०६.६६
    US$ १ ०६६.६०
    25
    US$ १०१.७०
    US$ २ ५४२.५०
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Compare SCT3022KLHRC11
      SCT3022KL vs SCT3022KLGC11 vs SCT3022KLHRC11
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top