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SI4090DY-T1-GE3

SI4090DY-T1-GE3
Mfr. #:
SI4090DY-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4090DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI4090DY-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
ThunderFET TrenchFET
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
7.8W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
100V
इनपुट-Capacitance-Ciss-Vds
2410pF @ 50V
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
19.7A (Tc)
Rds-on-max-Id-Vgs
10 mOhm @ 15A, 10V
Vgs-th-max-Id
3.3V @ 250μA
गेट-चार्ज-Qg-Vgs
69nC @ 10V
Pd-शक्ति-डिसिपेशन
7.8 W
आईडी-निरन्तर-नाली-वर्तमान
19.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
3.3 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
10 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Qg-गेट-चार्ज
27.9 nC
Tags
SI409, SI40, SI4
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 10 mOhm 7.8 W Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 100V 19.7A 8-Pin SOIC N T/R
***mal
N-Ch MOSFET SO-8 100V 10mohm @ 10V
***et
Trans MOSFET N-CH 100V 13.2A 8-Pin SO T/R
***nell
MOSFET, N-CH, 100V, 19.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
भाग # Mfg। विवरण स्टक मूल्य
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		156In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		156In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 19.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.6622
SI4090DY-T1-GE3
DISTI # SI4090DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 13.2A 8-Pin SO T/R (Alt: SI4090DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 12500
  • 2500:$9.4600
  • 5000:$6.5241
  • 7500:$4.8513
  • 12500:$3.9417
  • 25000:$3.5698
  • 62500:$3.4400
  • 125000:$3.3193
SI4090DY-T1-GE3
DISTI # 19X1960		Vishay IntertechnologiesMOSFET Transistor, N Channel, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V RoHS Compliant: Yes11795
  • 1:$1.5900
  • 10:$1.3200
  • 25:$1.2200
  • 50:$1.1300
  • 100:$1.0300
  • 500:$0.9010
  • 1000:$0.8020
SI4090DY-T1-GE3
DISTI # 78-SI4090DY-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
RoHS: Compliant		9
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7180
  • 2500:$0.7170
SI4090DY-T1-GE3
DISTI # 2364058		Vishay IntertechnologiesMOSFET, N-CH, 100V, 19.7A, SOIC-8
RoHS: Compliant		9640
  • 5:£1.0500
  • 25:£0.7120
  • 100:£0.6830
  • 250:£0.6330
  • 500:£0.5830
SI4090DY-T1-GE3
DISTI # 2364058		Vishay IntertechnologiesMOSFET, N-CH, 100V, 19.7A, SOIC-8
RoHS: Compliant		11795
  • 1:$2.4000
  • 10:$1.9700
  • 100:$1.5100
  • 500:$1.3000
  • 1000:$1.1400
  • 2500:$1.1400
SI4090DY-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs SO-8
RoHS: Compliant		Americas -
  • 2500:$0.6030
  • 5000:$0.5790
  • 10000:$0.5580
छवि भाग # विवरण
SI4090DY-T1-GE3

Mfr.#: SI4090DY-T1-GE3

OMO.#: OMO-SI4090DY-T1-GE3-VISHAY

 IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
SI4090DY

Mfr.#: SI4090DY

OMO.#: OMO-SI4090DY-1190

 नयाँ र मौलिक
SI4090DY-T1-E3

Mfr.#: SI4090DY-T1-E3

OMO.#: OMO-SI4090DY-T1-E3-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
SI4090DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.८४
US$ ०.८४
10
US$ ०.८०
US$ ७.९५
100
US$ ०.७५
US$ ७५.३३
500
US$ ०.७१
US$ ३५५.७५
1000
US$ ०.६७
US$ ६६९.६०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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