AS4C2M32D1-5TCN

AS4C2M32D1-5TCN
Mfr. #:
AS4C2M32D1-5TCN
निर्माता:
Alliance Memory
विवरण:
DRAM
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
AS4C2M32D1-5TCN डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
गठबन्धन मेमोरी
उत्पादन कोटि:
DRAM
RoHS:
Y
प्रकार:
SDRAM - DDR1
डाटा बस चौडाइ:
32 bit
संगठन:
2 M x 32
प्याकेज / केस:
TSOP-66
मेमोरी साइज:
64 Mbit
अधिकतम घडी आवृत्ति:
200 MHz
पहुँच समय:
5 ns
आपूर्ति भोल्टेज - अधिकतम:
2.7 V
आपूर्ति भोल्टेज - न्यूनतम:
2.3 V
न्यूनतम परिचालन तापमान:
0 C
अधिकतम परिचालन तापमान:
+ 70 C
ब्रान्ड:
गठबन्धन मेमोरी
माउन्टिङ शैली:
SMD/SMT
नमी संवेदनशील:
हो
सञ्चालन आपूर्ति भोल्टेज:
2.5 V
उत्पादन प्रकार:
DRAM
कारखाना प्याक मात्रा:
108
उपश्रेणी:
मेमोरी र डाटा भण्डारण
Tags
AS4C2M32D1-5, AS4C2M32D, AS4C2M, AS4C2, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC DDR SDRAM 64M 200MHZ 66TSOP
***NGYU ELECTRONICS
IC DRAM 64M PARALLEL 66TSOP II
छवि भाग # विवरण
AS4C2M32SA-7TCNTR

Mfr.#: AS4C2M32SA-7TCNTR

OMO.#: OMO-AS4C2M32SA-7TCNTR

DRAM SDRAM,64M,3.3V 143MHz,2M x 33
AS4C2M32SA-6TCNTR

Mfr.#: AS4C2M32SA-6TCNTR

OMO.#: OMO-AS4C2M32SA-6TCNTR

DRAM SDRAM,64M,3.3V 166MHz,2M x 32
AS4C2M32SA-6TIN

Mfr.#: AS4C2M32SA-6TIN

OMO.#: OMO-AS4C2M32SA-6TIN

DRAM SDRAM,64M,3.3V 166MHz,2M x 32
AS4C2M32SA-7TCN

Mfr.#: AS4C2M32SA-7TCN

OMO.#: OMO-AS4C2M32SA-7TCN

DRAM SDRAM,64M,3.3V 143MHz,2M x 32
AS4C2M32D1A-5BIN

Mfr.#: AS4C2M32D1A-5BIN

OMO.#: OMO-AS4C2M32D1A-5BIN

DRAM DDR1, 64M, 2.5V 200MHz,2M x 32
AS4C2M32S-6TIN

Mfr.#: AS4C2M32S-6TIN

OMO.#: OMO-AS4C2M32S-6TIN

DRAM 64Mb, 3.3V, 166Mhz 2M x 32 SDRAM
AS4C2M32S-7BCNTR

Mfr.#: AS4C2M32S-7BCNTR

OMO.#: OMO-AS4C2M32S-7BCNTR

DRAM 64Mb, 3.3V, 143Mhz 2M x 32 SDRAM
AS4C2M32D1-5TCN

Mfr.#: AS4C2M32D1-5TCN

OMO.#: OMO-AS4C2M32D1-5TCN

DRAM
AS4C2M32S-7BCNTR

Mfr.#: AS4C2M32S-7BCNTR

OMO.#: OMO-AS4C2M32S-7BCNTR-ALLIANCE-MEMORY

DRAM 64Mb, 3.3V, 143Mhz 2M x 32 SDRAM
AS4C2M32S-7BCN

Mfr.#: AS4C2M32S-7BCN

OMO.#: OMO-AS4C2M32S-7BCN-ALLIANCE-MEMORY

IC DRAM 64M PARALLEL 90TFBGA
उपलब्धता
स्टक:
Available
अर्डर मा:
2000
मात्रा प्रविष्ट गर्नुहोस्:
AS4C2M32D1-5TCN को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • MEMS Motion Sensors
    ON Semiconductor takes a system-based approach to its MEMS motion solutions, making it easy for designers to achieve both high performance and fast time to market.
  • Economic Housing (EH) System
    Phoenix Contact's two-piece EH system is easy to use and perfect for building automation and semi-industrial applications.
  • NCP510x High Voltage MOSFET and IGBT Gate Drivers
    ON Semiconductor's NCP510x high voltage MOSFET and IGBT gate drivers provide two outputs for direct drive of two N-channel power MOSFETs or IGBTs.
  • Compare AS4C2M32D1-5TCN
    AS4C2M32D15BCN vs AS4C2M32D15BIN vs AS4C2M32D15TCN
  • ATTINY1607/807 AVR® MCUs
    Microchip's ATtiny807/1607 microcontrollers use the high-performance, low-power AVR® RISC architecture.
  • Grid-EYE Infrared Array Sensors
    Panasonics' Grid-EYE infrared array sensor is a thermopile-typed infrared sensor which detects quantity of infrared ray.
Top