RFP12N10L

Mfr. #:: RFP12N10L
निर्माता:: ON Semiconductor / Fairchild
विवरण:: MOSFET TO-220AB N-Ch Power
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: RFP12N10L डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: ON अर्धचालक

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: प्वाल मार्फत

प्याकेज / केस:: TO-220-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 100 V

आईडी - निरन्तर ड्रेन वर्तमान:: 12 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 200 mOhms

Vgs - गेट-स्रोत भोल्टेज:: 10 V

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 60 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

प्याकेजिङ:: ट्यूब

उचाइ:: 16.3 mm

लम्बाइ:: 10.67 mm

शृङ्खला:: RFP12N10L

ट्रान्जिस्टर प्रकार:: 1 N-Channel

प्रकार:: MOSFET

चौडाइ:: 4.7 mm

ब्रान्ड:: सेमीकन्डक्टर / फेयरचाइल्डमा

पतन समय:: 80 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 70 ns

कारखाना प्याक मात्रा:: 800

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 100 ns

सामान्य टर्न-अन ढिलाइ समय:: 15 ns

भाग # उपनाम:: RFP12N10L_NL

एकाइ वजन:: 0.063493 oz

Tags: RFP12N10L, RFP12N10, RFP12N1, RFP12N, RFP12, RFP1, RFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RFP12N10L विवरण

***et: Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail

***ter Electronics: TRANS MOSFET N-CH 100V 12A 3PIN TO-220AB

***inecomponents.com: PWR MOS 100V/12A/0.200 OHM N-CH LOGIC-LVL TO-220AB

***i-Key: MOSFET N-CH 100V 12A TO-220AB

***trelec: MOSFET TO-220AB N 100V 12 A

***ser: MOSFETs TO-220AB N-Ch Power

***eco: 3 LD PLASTIC W/EXPOSED HEATSNK <AZ

***ponent Sense: TRANS RFP12N10L/ RFP8N20L

***rida Circuit: XSTR FET NCHAN 12N08L

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***nell: MOSFET, N, LOGIC, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:12A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:5V; Voltage, Vgs th Typ:2V; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Current, Idm Pulse:30A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:60W; Power, Pd:60W; SMD Marking:RFP12N10L; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V; Voltage, Vgs th Max:2V

***rchild Semiconductor: These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.

***ment14 APAC: MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:30A; SMD Marking:RFP12N10L; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
RFP12N10L DISTI # V36:1790_06301679	ON Semiconductor	FET 100V 200.0 MOHM TO220	1538	10000:$0.3367 2500:$0.3524 1000:$0.4066 500:$0.5270 100:$0.5960 10:$0.8511 1:$1.0016
RFP12N10L DISTI # RFP12N10L-ND	ON Semiconductor	MOSFET N-CH 100V 12A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	28849In Stock	5600:$0.4185 3200:$0.4406 800:$0.5979 100:$0.7238 25:$0.8812 10:$0.9280 1:$1.0400
RFP12N10L DISTI # 33644029	ON Semiconductor	FET 100V 200.0 MOHM TO220	10660	38:$0.2693
RFP12N10L DISTI # 33730734	ON Semiconductor	FET 100V 200.0 MOHM TO220	1538	19:$1.0016
RFP12N10L DISTI # RFP12N10L	ON Semiconductor	Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail (Alt: RFP12N10L) RoHS: Compliant Min Qty: 1	Europe - 750	1000:€0.3299 500:€0.3549 100:€0.3849 50:€0.4199 25:€0.4619 10:€0.5129 1:€0.5769
RFP12N10L DISTI # RFP12N10L	ON Semiconductor	Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: RFP12N10L) RoHS: Compliant Min Qty: 50 Container: Tube	Americas - 4701	500:$0.3217 250:$0.3299 150:$0.3341 100:$0.3384 50:$0.3407
RFP12N10L DISTI # RFP12N10L	ON Semiconductor	Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: RFP12N10L) Min Qty: 676 Container: Bulk	Americas - 0	6760:$0.4559 3380:$0.4679 2028:$0.4739 1352:$0.4799 676:$0.4829
RFP12N10L DISTI # 58K9511	ON Semiconductor	Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 58K9511) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	10000:$0.3850 2500:$0.3990 1000:$0.4460 500:$0.5570 100:$0.6270 10:$0.8080 1:$0.9480
RFP12N10L DISTI # 58K9511	ON Semiconductor	N CHANNEL MOSFET, 100V, 12A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:2V,MSL:- RoHS Compliant: Yes	799	10000:$0.3850 2500:$0.3990 1000:$0.4460 500:$0.5570 100:$0.6270 10:$0.8080 1:$0.9480
RFP12N10L DISTI # 26M2233	ON Semiconductor	MOSFET Transistor, N Channel, 12 A, 100 V, 200 mohm, 5 V, 2 V RoHS Compliant: Yes	10	1000:$0.4230 500:$0.5340 100:$0.6050 10:$0.7880 1:$0.9290
RFP12N10L. DISTI # 28AC1611	Fairchild Semiconductor Corporation	FET 100V 200.0 MOHM TO220 ROHS COMPLIANT: YES	4466	500:$0.3750 250:$0.3850 150:$0.3900 100:$0.3950 1:$0.3970
RFP12N10L DISTI # 512-RFP12N10L	ON Semiconductor	MOSFET TO-220AB N-Ch Power RoHS: Compliant	8236	1:$0.9800 10:$0.8390 100:$0.6440 500:$0.5690 1000:$0.4490 2500:$0.4290
RFP12N10L_Q DISTI # 512-RFP12N10L_Q	ON Semiconductor	MOSFET TO-220AB N-Ch Power RoHS: Not compliant	0
RFP12N10L	ON Semiconductor	N-Channel 100 V 0.2 O Flange Mount Logic Level Power Mosfet - TO-220AB RoHS: Compliant	671Tube	50:$0.4350 250:$0.3700 500:$0.3600 1000:$0.3550 2000:$0.3450
RFP12N10L	ON Semiconductor	Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	3200	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
RFP12N10L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	2275	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
RFP12N10L	Harris Semiconductor	Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	295	1000:$0.4300 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5300
RFP12N10L DISTI # 295703	ON Semiconductor	N-CHANNEL LOGICFET RFP12N10L 12A 100V, EA	777	500:£0.3800 250:£0.4100 100:£0.4300 25:£0.4900 1:£2.0000
RFP12N10L DISTI # 295703P	ON Semiconductor	N-CHANNEL LOGICFET RFP12N10L 12A 100V, TA	1571	500:£0.3800 250:£0.4100 100:£0.4300 25:£0.4900
RFP12N10L DISTI # 3683197	ON Semiconductor	N-CHANNEL LOGICFET RFP12N10L 12A 100V, TU	100	2500:£0.3070 1000:£0.3460 500:£0.4390 250:£0.4960 50:£0.6460
RFP12N10L	Fairchild Semiconductor Corporation		6
RFP12N10L	Fairchild Semiconductor Corporation		572
RFP12N10L	Intersil Corporation		35
RFP12N10L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-220AB	6	7:$0.6240 1:$0.8320
RFP12N10L	Harris Semiconductor	MOSFET Transistor, N-Channel, TO-220AB	40	28:$0.5481 6:$0.7308 1:$0.9135
RFP12N10L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-220AB	4	1:$1.0400
RFP12N10L DISTI # RFP12N10L	ON Semiconductor	Transistor: N-MOSFET,unipolar,100V,12A,60W,TO220AB	230	500:$0.4400 100:$0.5000 25:$0.5400 5:$0.6200 1:$0.6900
RFP12N10L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	6400
RFP12N10L DISTI # 1017795	ON Semiconductor	TRANSISTOR, MOSFET, N, 100V, 12A, TO-220	1112	500:£0.4120 250:£0.4390 100:£0.4660 10:£0.6620 1:£0.8180
RFP12N10L DISTI # 1017795	ON Semiconductor	TRANSISTOR, MOSFET, N, 100V, 12A, TO-220 RoHS: Compliant	347	1000:$0.6300 500:$0.7970 100:$0.9030 10:$1.1800 1:$1.3900
RFP12N10L DISTI # XSFT00000028129	Fairchild Semiconductor Corporation	N-CHANNEL 100 V 0.2 O FLANGE MOUNT LOGIC LEVELPOWER MOSFET - TO-220AB RoHS: Compliant	2104 in Stock0 on Order	800:$0.5800

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: LM317T/NOPB OMO.#: OMO-LM317T-NOPB	Linear Voltage Regulators 3-TERMINAL ADJ REG
	Mfr.#: LTST-C150GKT OMO.#: OMO-LTST-C150GKT	Standard LEDs - SMD Green Clear 569nm
	Mfr.#: 4527C OMO.#: OMO-4527C	Fuse Holder Accessories COVER-5MM FUSE HOLDER
	Mfr.#: 507222B00000G OMO.#: OMO-507222B00000G	Heat Sinks Hat Section Style Stamped Heatsink for Dual TO-220, Horizontal Mounting, 9.6 n Thermal Resistance, Black Anodized
	Mfr.#: 4527 OMO.#: OMO-4527	Fuse Holder PC 5MM FUSE HOLDER
	Mfr.#: 507222B00000G OMO.#: OMO-507222B00000G-AAVID-THERMALLOY	HEATSINK TO-220 DUAL 10W
	Mfr.#: N2524-6002RB OMO.#: OMO-N2524-6002RB-410	Headers & Wire Housings 24P STRT SOLDER TAIL HIGH TEMP
	Mfr.#: 2-5748003-0 OMO.#: OMO-2-5748003-0-TE-CONNECTIVITY	D-Sub Standard Connectors HD-20 9P PLUG
	Mfr.#: 577102B00000G OMO.#: OMO-577102B00000G-AAVID-THERMALLOY	Heat Sink Passive TO-220 Slim Channel Screw Mount 25.9C/W Black Anodized
	Mfr.#: 0218001.MXP OMO.#: OMO-0218001-MXP-LITTELFUSE	Cartridge Fuses 250V 1A Time Lag (Slo-Blo)

उपलब्धता

स्टक:: Available
अर्डर मा:: 1991
मात्रा प्रविष्ट गर्नुहोस्:

RFP12N10L को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.९८~~; ~~US$ ०.९८~~

10: ~~US$ ०.८४~~; ~~US$ ८.३९~~

100: ~~US$ ०.६४~~; ~~US$ ६४.४०~~

500: ~~US$ ०.५७~~; ~~US$ २८४.५०~~

1000: ~~US$ ०.४५~~; ~~US$ ४४९.००~~

2500: ~~US$ ०.४३~~; ~~US$ १ ०७२.५०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

RFP12N10L 3
RFP12N10 4
RFP12N1 5
RFP12N 10
RFP12 17
RFP1 87
RFP 580

नवीनतम उत्पादनहरू

Gate Drivers

The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
NCP137 700 mA LDO Regulators

ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
Compare RFP12N10L

RFP12N10L vs RFP12N10LF12N10L vs RFP12N10LR41546AMPS
NCP114 Low Dropout Regulators

ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
LC717A00AR Touch Sensor

These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
FDMQ86530L Quad-MOSFET

ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.

More Newest Products

RFP12N10L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes