OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

AS4C8M32MD2A-25BCNTR

AS4C8M32MD2A-25BCNTR
Mfr. #:
AS4C8M32MD2A-25BCNTR
निर्माता:
Alliance Memory
विवरण:
DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
AS4C8M32MD2A-25BCNTR डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
AS4C8M32MD2A-25BCNTR थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
गठबन्धन मेमोरी
उत्पादन कोटि:
DRAM
RoHS:
Y
प्रकार:
SDRAM Mobile - LPDDR2
डाटा बस चौडाइ:
32 bit
संगठन:
8 M x 32
प्याकेज / केस:
FBGA-134
मेमोरी साइज:
256 Mbit
अधिकतम घडी आवृत्ति:
400 MHz
आपूर्ति भोल्टेज - अधिकतम:
1.95 V
आपूर्ति भोल्टेज - न्यूनतम:
1.14 V
हालको आपूर्ति - अधिकतम:
140 mA
न्यूनतम परिचालन तापमान:
- 25 C
अधिकतम परिचालन तापमान:
+ 85 C
शृङ्खला:
AS4C8M32MD2A-25
प्याकेजिङ:
रील
ब्रान्ड:
गठबन्धन मेमोरी
माउन्टिङ शैली:
SMD/SMT
नमी संवेदनशील:
हो
उत्पादन प्रकार:
DRAM
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
मेमोरी र डाटा भण्डारण
Tags
AS4C8M32MD, AS4C8M32M, AS4C8M3, AS4C8, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR2 SDRAM
Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1 and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
Low-Power DDR2 SDRAM
Alliance Memory Low-Power DDR2 SDRAM are high-speed CMOS and dynamic-access memory that are internally configured as a 8-bank memory device. These DDR2 SDRAM feature 4-bit pre-fetch DDR architecture, programmable READ and WRITE latencies, auto Temperature Compensated Self Refresh (TCSR), and clock stop capability. The DDR2 SDRAM reduces the number of input pins in the system by using a double data rate architecture on the Command/Address (CA) bus. This CA bus is used to transmit address, command, and bank information. These DDR2 SDRAM can achieve high-speed operation by using a double data rate architecture on the DQ (bidirectional/differential data bus) pins.
छवि भाग # विवरण
AS4C8M32MD2A-25BCNTR

Mfr.#: AS4C8M32MD2A-25BCNTR

OMO.#: OMO-AS4C8M32MD2A-25BCNTR

 DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
AS4C8M32MD2A-25BPCN

Mfr.#: AS4C8M32MD2A-25BPCN

OMO.#: OMO-AS4C8M32MD2A-25BPCN

 DRAM 256M 1.2/1.8V 32Mx32 Mobile DDR2 E-Temp
AS4C8M32MD2A-25BCN

Mfr.#: AS4C8M32MD2A-25BCN

OMO.#: OMO-AS4C8M32MD2A-25BCN

 DRAM 256M 1.2/1.8V 400MHz 8Mx32 LPDDR2 E-Temp
AS4C8M32MD2A-25BPCN

Mfr.#: AS4C8M32MD2A-25BPCN

OMO.#: OMO-AS4C8M32MD2A-25BPCN-1190

 256M 8M X 32 LPDDR2 1.2V 168 POP Extended temp
AS4C8M32MD2A-25BCN

Mfr.#: AS4C8M32MD2A-25BCN

OMO.#: OMO-AS4C8M32MD2A-25BCN-ALLIANCE-MEMORY

 134-BALL FBGA (10X11.5X1.0)
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
AS4C8M32MD2A-25BCNTR को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
More Newest Products
Top