BSM35GD120DN2E3224

BSM35GD120DN2E3224
Mfr. #:
BSM35GD120DN2E3224
निर्माता:
Infineon Technologies
विवरण:
IGBT Modules N-CH 1.2KV 50A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSM35GD120DN2E3224 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
IGBT मोड्युलहरू
RoHS:
N
उत्पादन:
IGBT सिलिकन मोड्युलहरू
कन्फिगरेसन:
हेक्स
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
1200 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.7 V
25 C मा निरन्तर कलेक्टर वर्तमान:
50 A
गेट-एमिटर चुहावट वर्तमान:
150 nA
Pd - शक्ति अपव्यय:
280 W
प्याकेज / केस:
EconoPACK 2
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
ट्रे
उचाइ:
17 mm
लम्बाइ:
107.5 mm
चौडाइ:
45 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
माउन्टिङ शैली:
चेसिस माउन्ट
अधिकतम गेट एमिटर भोल्टेज:
20 V
उत्पादन प्रकार:
IGBT मोड्युलहरू
कारखाना प्याक मात्रा:
10
उपश्रेणी:
IGBTs
भाग # उपनाम:
BSM35GD120DN2E3224BOSA1 SP000091898
एकाइ वजन:
6.490409 oz
Tags
BSM35GD120DN2E3224, BSM35GD120DN2E3, BSM35GD120DN2E, BSM35GD120DN, BSM35GD120D, BSM35GD, BSM35, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V 35A 3-PHASE
***omponent
IGBT Power Module, 1200V 50A ECONOPACK 2K C67070-A2506-A67. Maximum Ratings. Parameter Symbol Values Unit. Collector-emitter voltage VCE 1200 V. Collector-gate voltage. RGE = 20 kO. VCGR. 1200
भाग # Mfg। विवरण स्टक मूल्य
BSM35GD120DN2E3224BOSA1
DISTI # BSM35GD120DN2E3224BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$104.7230
BSM35GD120DN2E3224
DISTI # SP000091898
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000091898)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 8
  • 1:€104.7900
  • 10:€96.0900
  • 25:€92.1900
  • 50:€88.6900
  • 100:€85.3900
  • 500:€82.2900
  • 1000:€76.7900
BSM35GD120DN2E3224
DISTI # BSM35GD120DN2E3224
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: BSM35GD120DN2E3224)
RoHS: Compliant
Min Qty: 10
Container: Tape and Reel
Asia - 0
  • 10:$96.9257
  • 20:$94.2333
  • 30:$91.6865
  • 50:$89.2737
  • 100:$88.1143
  • 250:$86.9846
  • 500:$85.8835
BSM35GD120DN2E3224BOSA1
DISTI # BSM35GD120DN2E3224BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM35GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$97.6900
  • 20:$94.1900
  • 40:$90.7900
  • 60:$87.6900
  • 100:$86.1900
BSM35GD120DN2E3224
DISTI # 641-BSM35GD120DN2E32
Infineon Technologies AGIGBT Modules N-CH 1.2KV 50A
RoHS: Not compliant
24
  • 1:$108.5600
  • 5:$106.5700
  • 10:$101.7700
BSM35GD120DN2E3224Infineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant
Europe - 20
    BSM35GD120DN2E3224BOSA1
    DISTI # XSKDRABV0032779
    Infineon Technologies AG 
    RoHS: Compliant
    10
    • 10:$132.3600
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    उपलब्धता
    स्टक:
    21
    अर्डर मा:
    2004
    मात्रा प्रविष्ट गर्नुहोस्:
    BSM35GD120DN2E3224 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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    100
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