SI4900DY-T1-GE3

Mfr. #:: SI4900DY-T1-GE3
निर्माता:: Vishay
विवरण:: RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI4900DY-T1-GE3 डाटा पाना
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ECAD Model:
थप जानकारी:: SI4900DY-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Vishay Siliconix

उत्पादन कोटि: FETs - arrays

शृङ्खला: TrenchFETR

प्याकेजिङ: टेप र रिल (TR)

अंश-उपनामहरू: SI4900DY-GE3

एकाइ - वजन: 0.006596 oz

माउन्टिङ-शैली: SMD/SMT

प्याकेज-केस: 8-SOIC (0.154", 3.90mm Width)

प्रविधि: सि

सञ्चालन - तापक्रम: -55°C ~ 150°C (TJ)

माउन्टिङ-प्रकार: सतह माउन्ट

च्यानलहरूको संख्या: 2 Channel

आपूर्तिकर्ता-उपकरण-प्याकेज: 8-SO

कन्फिगरेसन: दोहोरो

FET-प्रकार: 2 N-Channel (Dual)

पावर-अधिकतम: 3.1W

ट्रान्जिस्टर-प्रकार: 2 N-Channel

ड्रेन-टू-स्रोत-भोल्टेज-Vdss: 60V

इनपुट-Capacitance-Ciss-Vds: 665pF @ 15V

FET - सुविधा: तर्क स्तर गेट

वर्तमान-निरन्तर-नाली-Id-25°C: 5.3A

Rds-on-max-Id-Vgs: 58 mOhm @ 4.3A, 10V

Vgs-th-max-Id: 3V @ 250μA

गेट-चार्ज-Qg-Vgs: 20nC @ 10V

Pd-शक्ति-डिसिपेशन: 2 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 10 ns

उदय-समय: 15 ns 65 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 4.3 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 60 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 58 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 20 ns 15 ns

सामान्य-टर्न-अन-डिले-समय: 10 ns 15 ns

च्यानल-मोड: वृद्धि

Tags: SI4900DY-T1, SI4900DY-T, SI4900D, SI4900, SI490, SI49, SI4

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4900DY-T1-GE3 विवरण

***et Japan: Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R

***ure Electronics: MOSFET 60V 5.3A 3.1W 58mohm @ 10V

***nell: DUAL N CHANNEL MOSFET, 60V, 5.3A

***: DUAL N-CHANNEL 60-V (D-S) MOSF

***ark: COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes

SI4900DY-T1-GE3 थप जानकारी

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI4900DY-T1-GE3 DISTI # V72:2272_09216636	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 10:$0.8556 1:$0.9943
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2907In Stock	1000:$0.6118 500:$0.7750 100:$0.9993 10:$1.2640 1:$1.4300
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2907In Stock	1000:$0.6118 500:$0.7750 100:$0.9993 10:$1.2640 1:$1.4300
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.5544
SI4900DY-T1-GE3 DISTI # 27121565	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 14:$0.8556
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5239 5000:$0.5079 10000:$0.4869 15000:$0.4739 25000:$0.4609
SI4900DY-T1-GE3 DISTI # 23T8519	Vishay Intertechnologies	MOSFET Transistor, Dual N Channel, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V RoHS Compliant: Yes	6579	1:$1.4200 10:$1.2000 25:$1.1200 50:$1.0400 100:$0.9590 250:$0.9040 500:$0.8490
SI4900DY-T1-GE3 DISTI # 15R5113	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 60V, 5.3A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$0.6200 1000:$0.5940 2000:$0.5400 4000:$0.4860 6000:$0.4680 10000:$0.4580
SI4900DY-T1-GE3 DISTI # 781-SI4900DY-GE3	Vishay Intertechnologies	MOSFET 60V 5.3A 3.1W 58mohm @ 10V RoHS: Compliant	2489	1:$1.2600 10:$1.0400 100:$0.7960 500:$0.6850 1000:$0.5400 2500:$0.5040
SI4900DY-T1-GE3 DISTI # 7103364	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 4.3A SOIC8, PK	80	10:£0.8360 50:£0.7240 100:£0.5760 250:£0.5360 500:£0.4640
SI4900DY-T1-GE3 DISTI # 7103364P	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 4.3A SOIC8, RL	190	50:£0.7240 100:£0.5760 250:£0.5360 500:£0.4640
SI4900DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4900DY-T1-GE3 DISTI # C1S803601729574	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	304	250:$0.6143 100:$0.6827 25:$0.8453 10:$0.8556
SI4900DY-T1-GE3 DISTI # 1858965RL	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	0	1:$2.0000 10:$1.6500 100:$1.2600 500:$1.0900 1000:$0.8550 2500:$0.7980
SI4900DY-T1-GE3 DISTI # 1858965	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	6579	1:$2.0000 10:$1.6500 100:$1.2600 500:$1.0900 1000:$0.8550 2500:$0.7980
SI4900DY-T1-GE3 DISTI # 1858965	Vishay Intertechnologies	MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant	6699	5:£0.9380 25:£0.7710 100:£0.6140 250:£0.5720 500:£0.4950

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3	MOSFET 60V 5.3A 3.1W
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3	MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
	Mfr.#: SI4900DY-T1-E3-CUT TAPE OMO.#: OMO-SI4900DY-T1-E3-CUT-TAPE-1190	नयाँ र मौलिक
	Mfr.#: SI4900DY OMO.#: OMO-SI4900DY-1190	नयाँ र मौलिक
	Mfr.#: SI4900DY-T1 OMO.#: OMO-SI4900DY-T1-1190	नयाँ र मौलिक
	Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3-VISHAY	MOSFET 2N-CH 60V 5.3A 8-SOIC
	Mfr.#: SI4900DY-TI-E3 OMO.#: OMO-SI4900DY-TI-E3-1190	नयाँ र मौलिक
	Mfr.#: SI4900DYE3 OMO.#: OMO-SI4900DYE3-1190	Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
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SI4900DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.४४~~; ~~US$ ०.४४~~

10: ~~US$ ०.४२~~; ~~US$ ४.२१~~

100: ~~US$ ०.४०~~; ~~US$ ३९.८७~~

500: ~~US$ ०.३८~~; ~~US$ १८८.३०~~

1000: ~~US$ ०.३५~~; ~~US$ ३५४.४०~~

बाट सुरु गर्नुहोस्

SI4900DY-T1 4
SI4900DY-T 5
SI4900D 7
SI4900 8
SI490 32
SI49 329
SI4 2994

SI4900DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes