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SI4900DY-T1-E3

SI4900DY-T1-E3
Mfr. #:
SI4900DY-T1-E3
निर्माता:
Vishay
विवरण:
MOSFET 2N-CH 60V 5.3A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4900DY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI4900DY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
Tags
SI4900DY-T1, SI4900DY-T, SI4900D, SI4900, SI490, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 60 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 60V 5.3A 8-SOIC
***Components
Dual N-Ch MOSFET SO-8 60V 58mohm @ 10V
***eco
DUAL N-CH MOSFET SO-8 60V 58MOHM @ 10V<AZ
***ronik
DUAL 60V 5A 58mOhm SO-8 RoHSconf
***
DUAL N-CHANNEL 60-V (D-S)
***ied Electronics & Automation
TRANSITOR; SI9933BDY
***ark
Transistor; Continuous Drain Current, Id:5300mA; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.072ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4900DY-T1-E3
DISTI # V72:2272_07432390		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		43
  • 25:$0.9195
  • 10:$1.0217
  • 1:$1.3601
SI4900DY-T1-E3
DISTI # V36:1790_07432390		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.4909
  • 1250000:$0.4911
  • 250000:$0.5043
  • 25000:$0.5257
  • 2500:$0.5292
SI4900DY-T1-E3
DISTI # SI4900DY-T1-E3CT-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13982In Stock
  • 1000:$0.5840
  • 500:$0.7397
  • 100:$0.8955
  • 10:$1.1490
  • 1:$1.2800
SI4900DY-T1-E3
DISTI # SI4900DY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13982In Stock
  • 1000:$0.5840
  • 500:$0.7397
  • 100:$0.8955
  • 10:$1.1490
  • 1:$1.2800
SI4900DY-T1-E3
DISTI # SI4900DY-T1-E3TR-ND		Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		12500In Stock
  • 12500:$0.4838
  • 5000:$0.5027
  • 2500:$0.5292
SI4900DY-T1-E3
DISTI # 32675049		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
RoHS: Compliant		43
  • 14:$1.3601
SI4900DY-T1-E3
DISTI # SI4900DY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI4900DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4900DY-T1-E3
    DISTI # SI4900DY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-E3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.4609
    • 15000:$0.4739
    • 10000:$0.4869
    • 5000:$0.5079
    • 2500:$0.5239
    SI4900DY-T1-E3
    DISTI # SI4900DY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI4900DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.2599
    • 15000:€0.2789
    • 10000:€0.3019
    • 5000:€0.3509
    • 2500:€0.5149
    SI4900DY-T1-E3
    DISTI # 09X6438    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes0
    • 500:$0.7060
    • 250:$0.7960
    • 100:$0.9510
    • 50:$1.0500
    • 25:$1.1700
    • 10:$1.2900
    • 1:$1.3600
    SI4900DY-T1-E3
    DISTI # 51K6968    		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 10000:$0.4580
    • 6000:$0.4680
    • 4000:$0.4860
    • 2000:$0.5400
    • 1000:$0.5940
    • 1:$0.6200
    SI4900DY-T1-E3
    DISTI # R1082540    		Vishay DaleTRANSITOR,SI9933BDY
    RoHS: Compliant    		0
    • 10:$1.6200
    • 50:$1.3400
    • 100:$1.2200
    • 250:$1.1200
    • 500:$1.0500
    SI4900DY-T1-E3
    DISTI # 781-SI4900DY-E3    		Vishay IntertechnologiesMOSFET 60V 5.3A 3.1W
    RoHS: Compliant    		4962
    • 1:$1.2500
    • 10:$1.0300
    • 100:$0.7950
    • 500:$0.6840
    • 1000:$0.5390
    • 2500:$0.5030
    • 5000:$0.4780
    SI4900DY-T1-E3
    DISTI # 1807298    		Vishay IntertechnologiesDUAL N-CH MOSFET SO-8 60V 58MOHM @ 10V, RL2350
    • 5000:£0.3750
    • 2500:£0.3810
    SI4900DY-T1-E3Vishay IntertechnologiesMOSFET 60V 5.3A 3.1WAmericas -
      छवि भाग # विवरण
      SI4900DY-T1-E3

      Mfr.#: SI4900DY-T1-E3

      OMO.#: OMO-SI4900DY-T1-E3

      		 MOSFET 60V 5.3A 3.1W
      SI4900DY-T1-GE3

      Mfr.#: SI4900DY-T1-GE3

      OMO.#: OMO-SI4900DY-T1-GE3

      		 MOSFET 60V 5.3A 3.1W 58mohm @ 10V
      SI4900DY-T1-GE3

      Mfr.#: SI4900DY-T1-GE3

      OMO.#: OMO-SI4900DY-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V
      SI4900DY-T1-E3-CUT TAPE

      Mfr.#: SI4900DY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4900DY-T1-E3-CUT-TAPE-1190

      		 नयाँ र मौलिक
      SI4900DY

      Mfr.#: SI4900DY

      OMO.#: OMO-SI4900DY-1190

      		 नयाँ र मौलिक
      SI4900DY-T1

      Mfr.#: SI4900DY-T1

      OMO.#: OMO-SI4900DY-T1-1190

      		 नयाँ र मौलिक
      SI4900DY-T1-E3

      Mfr.#: SI4900DY-T1-E3

      OMO.#: OMO-SI4900DY-T1-E3-VISHAY

      		 MOSFET 2N-CH 60V 5.3A 8-SOIC
      SI4900DY-TI-E3

      Mfr.#: SI4900DY-TI-E3

      OMO.#: OMO-SI4900DY-TI-E3-1190

      		 नयाँ र मौलिक
      SI4900DYE3

      Mfr.#: SI4900DYE3

      OMO.#: OMO-SI4900DYE3-1190

      		 Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5500
      मात्रा प्रविष्ट गर्नुहोस्:
      SI4900DY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.४४
      US$ ०.४४
      10
      US$ ०.४२
      US$ ४.२१
      100
      US$ ०.४०
      US$ ३९.८७
      500
      US$ ०.३८
      US$ १८८.३०
      1000
      US$ ०.३५
      US$ ३५४.४०
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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