SPW12N50C3

Mfr. #:: SPW12N50C3
निर्माता:: Rochester Electronics, LLC
विवरण:: IGBT Transistors MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SPW12N50C3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: INFINEON

उत्पादन कोटि: FETs - एकल

Tags: SPW12, SPW1, SPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPW12N50C3 विवरण

***p One Stop Japan: Trans MOSFET N-CH 560V 11.6A 3-Pin(3+Tab) TO-247

***ment14 APAC: MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-93; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-218; Current Id Max:11.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:SOT-93; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SPW12N50C3FKSA1 DISTI # SPW12N50C3FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 560V 11.6A TO-247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
SPW12N50C3 DISTI # SPW12N50C3	Infineon Technologies AG	Trans MOSFET N-CH 560V 11.6A 3-Pin TO-247 Tube - Bulk (Alt: SPW12N50C3) RoHS: Not Compliant Min Qty: 228 Container: Bulk	Americas - 0	228:$1.4900 230:$1.4900 458:$1.3900 1140:$1.3900 2280:$1.2900
SPW12N50C3XK DISTI # SPW12N50C3XK	Infineon Technologies AG	- Bulk (Alt: SPW12N50C3XK) Min Qty: 1087 Container: Bulk	Americas - 0	1087:$0.3309 1089:$0.3189 2176:$0.3069 5435:$0.2969 10870:$0.2919
SPW12N50C3IN DISTI # SPW12N50C3IN	Infineon Technologies AG	- Bulk (Alt: SPW12N50C3IN) Min Qty: 1087 Container: Bulk	Americas - 0	1087:$0.3309 1089:$0.3189 2176:$0.3069 5435:$0.2969 10870:$0.2919
SPW12N50C3FKSA1 DISTI # SPW12N50C3FKSA1	Infineon Technologies AG	- Bulk (Alt: SPW12N50C3FKSA1) RoHS: Compliant Min Qty: 228 Container: Bulk	Americas - 0	228:$1.4900 230:$1.4900 458:$1.3900 1140:$1.3900 2280:$1.2900
SPW12N50C3 DISTI # 726-SPW12N50C3	Infineon Technologies AG	MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3 RoHS: Compliant	0
SPW12N50C3	Infineon Technologies AG	Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	3505	1000:$1.4500 500:$1.5200 100:$1.5900 25:$1.6500 1:$1.7800
SPW12N50C3FKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	240	1000:$1.4500 500:$1.5200 100:$1.5900 25:$1.6500 1:$1.7800
SPW12N50C3XK	Infineon Technologies AG	RoHS: Not Compliant	380	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700
SPW12N50C3IN	Infineon Technologies AG	RoHS: Not Compliant	369	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SPW12N50C3 OMO.#: OMO-SPW12N50C3-126	IGBT Transistors MOSFET N-Ch 560V 11.6A TO247-3 CoolMOS C3
	Mfr.#: SPW12N50C3,12N50C3 OMO.#: OMO-SPW12N50C3-12N50C3-1190	नयाँ र मौलिक
	Mfr.#: SPW12N50C3FKSA1 OMO.#: OMO-SPW12N50C3FKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 560V 11.6A TO-247
	Mfr.#: SPW12N50C3PB-FREE OMO.#: OMO-SPW12N50C3PB-FREE-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
मात्रा प्रविष्ट गर्नुहोस्:

SPW12N50C3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.४३~~; ~~US$ २.४३~~

10: ~~US$ २.३१~~; ~~US$ २३.०८~~

100: ~~US$ २.१९~~; ~~US$ २१८.७०~~

500: ~~US$ २.०७~~; ~~US$ १ ०३२.७५~~

1000: ~~US$ १.९४~~; ~~US$ १ ९४४.००~~

बाट सुरु गर्नुहोस्

SPW12 4
SPW1 66
SPW 260

नवीनतम उत्पादनहरू

IO-Link™ Devices

Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
Large Diameter Clear Hole Spacers

RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
WE-ExB Series Common Mode Power Line Choke

Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
CPI2-B1-REU Production Device Programmer

Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
CFSH05-20L Schottky Diode

Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.

More Newest Products

SPW12N50C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes