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IPB35N12S3L26ATMA1

IPB35N12S3L26ATMA1
Mfr. #:
IPB35N12S3L26ATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CHANNEL 100+
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB35N12S3L26ATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB35N12S3L26ATMA1 DatasheetIPB35N12S3L26ATMA1 Datasheet (P4-P6)IPB35N12S3L26ATMA1 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
नमी संवेदनशील:
हो
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPB35N12S3L-26 SP001398600
एकाइ वजन:
0.077603 oz
Tags
IPB35N, IPB35, IPB3, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CHANNEL_100+
***ineon
Summary of Features: OptiMOS - power MOSFET for automotive applications; N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested
भाग # Mfg। विवरण स्टक मूल्य
IPB35N12S3L26ATMA1
DISTI # IPB35N12S3L26ATMA1-ND		Infineon Technologies AGMOSFET N-CHANNEL_100+
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.6121
IPB35N12S3L26ATMA1
DISTI # IPB35N12S3L26ATMA1		Infineon Technologies AGMOSFET_(120V,300V) - Bulk (Alt: IPB35N12S3L26ATMA1)
Min Qty: 758
Container: Bulk		Americas - 0
  • 758:$0.5039
  • 760:$0.4859
  • 1518:$0.4679
  • 3790:$0.4519
  • 7580:$0.4439
IPB35N12S3L26ATMA1
DISTI # IPB35N12S3L26ATMA1		Infineon Technologies AGMOSFET_(120V,300V) - Tape and Reel (Alt: IPB35N12S3L26ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.5339
  • 2000:$0.5149
  • 4000:$0.4959
  • 6000:$0.4789
  • 10000:$0.4709
IPB35N12S3L26ATMA1
DISTI # 726-IPB35N12S3L26AT		Infineon Technologies AGMOSFET N-CHANNEL 100+
RoHS: Compliant		0
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7980
  • 500:$0.7050
  • 1000:$0.5570
  • 2000:$0.4940
  • 10000:$0.4750
IPB35N12S3L26ATMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 120V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		23000
  • 1000:$0.4600
  • 500:$0.4900
  • 100:$0.5100
  • 25:$0.5300
  • 1:$0.5700
छवि भाग # विवरण
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1

 MOSFET N-CHANNEL 100+
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL_100+
उपलब्धता
स्टक:
Available
अर्डर मा:
2000
मात्रा प्रविष्ट गर्नुहोस्:
IPB35N12S3L26ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.२१
US$ १.२१
10
US$ १.०३
US$ १०.३०
100
US$ ०.८०
US$ ७९.८०
500
US$ ०.७०
US$ ३५२.५०
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