CSD25213W10

CSD25213W10
Mfr. #:
CSD25213W10
विवरण:
MOSFET P-CH NexFET Pwr MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
CSD25213W10 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
CSD25213W10 थप जानकारी CSD25213W10 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
टेक्सास उपकरण
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
DSBGA-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
1.6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
67 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
850 mV
Vgs - गेट-स्रोत भोल्टेज:
6 V
Qg - गेट चार्ज:
2.2 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
1 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
NexFET
प्याकेजिङ:
रील
उचाइ:
0.62 mm
लम्बाइ:
1 mm
शृङ्खला:
CSD25213W10
ट्रान्जिस्टर प्रकार:
1 P-Channel
चौडाइ:
1 mm
ब्रान्ड:
टेक्सास उपकरण
पतन समय:
970 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
520 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
1 us
सामान्य टर्न-अन ढिलाइ समय:
510 ns
एकाइ वजन:
0.000039 oz
Tags
CSD252, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm 4-DSBGA -55 to 150
***p One Stop Global
Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R
***i-Key
MOSFET P-CH 20V 1.6A 4DSBGA
***ark
20V Pch Mosfet
***AS
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
NexFET P-Channel Power MOSFETs
OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.
TI P-Channel MOSFETs - 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
भाग # विवरण स्टक मूल्य
CSD25213W10
DISTI # 296-40004-1-ND
MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5685In Stock
  • 1000:$0.1570
  • 500:$0.2094
  • 100:$0.3053
  • 10:$0.4450
  • 1:$0.5700
CSD25213W10
DISTI # 296-40004-6-ND
MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5685In Stock
  • 1000:$0.1570
  • 500:$0.2094
  • 100:$0.3053
  • 10:$0.4450
  • 1:$0.5700
CSD25213W10
DISTI # 296-40004-2-ND
MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.1228
  • 6000:$0.1313
  • 3000:$0.1398
CSD25213W10
DISTI # CSD25213W10
Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD25213W10)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 6000:$0.1109
  • 12000:$0.1059
  • 18000:$0.1019
  • 30000:$0.0989
  • 60000:$0.0959
CSD25213W10
DISTI # CSD25213W10
Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    CSD25213W10
    DISTI # CSD25213W10
    Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.1779
    • 6000:€0.1359
    • 12000:€0.1219
    • 18000:€0.1009
    • 30000:€0.0929
    CSD25213W10P-Channel NexFET&#153,Power MOSFET6000
    • 1000:$0.0900
    • 750:$0.1000
    • 500:$0.1200
    • 250:$0.1500
    • 100:$0.1600
    • 25:$0.1900
    • 10:$0.2100
    • 1:$0.2300
    CSD25213W10
    DISTI # 595-CSD25213W10
    MOSFET P-CH NexFET Pwr MOSFET
    RoHS: Compliant
    10655
    • 1:$0.4500
    • 10:$0.3400
    • 100:$0.1850
    • 1000:$0.1390
    • 3000:$0.1200
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    8-bit Microcontrollers - MCU 128KB Flash, 8KB RAM, 1KB EEPROM, 12-bit ADC2, Vector Interrupts, DMA, MAP, DIA, DAC, Comp, PWM, CWG, HLT, WWDT, SCAN/CRC, ZCD, PPS, UART, SPI/I2C, IDLE/DOZE/PMD
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    उपलब्धता
    स्टक:
    15
    अर्डर मा:
    1998
    मात्रा प्रविष्ट गर्नुहोस्:
    CSD25213W10 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.४५
    US$ ०.४५
    10
    US$ ०.३४
    US$ ३.४०
    100
    US$ ०.१८
    US$ १८.५०
    1000
    US$ ०.१४
    US$ १३९.००
    बाट सुरु गर्नुहोस्
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