SQJ912AEP-T1_GE3

Mfr. #:: SQJ912AEP-T1_GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 40V 30A 48W AEC-Q101 Qualified
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SQJ912AEP-T1_GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SQJ912AEP-T1_GE3 Datasheet SQJ912AEP-T1_GE3 Datasheet (P4-P6)SQJ912AEP-T1_GE3 Datasheet (P7-P9)SQJ912AEP-T1_GE3 Datasheet (P10-P11)
ECAD Model:
थप जानकारी:: SQJ912AEP-T1_GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-SO-8L-4

च्यानलहरूको संख्या:: 2 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 40 V

आईडी - निरन्तर ड्रेन वर्तमान:: 30 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 7.7 mOhms, 7.7 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.5 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 38 nC, 38 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 48 W

कन्फिगरेसन:: दोहोरो

च्यानल मोड:: वृद्धि

योग्यता:: AEC-Q101

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

उचाइ:: 1.04 mm

लम्बाइ:: 6.15 mm

शृङ्खला:: SQ

ट्रान्जिस्टर प्रकार:: 2 N-Channel

चौडाइ:: 5.13 mm

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 58 S, 58 S

पतन समय:: 11 ns, 11 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 9 ns, 9 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 23 ns, 23 ns

सामान्य टर्न-अन ढिलाइ समय:: 10 ns, 10 ns

एकाइ वजन:: 0.017870 oz

Tags: SQJ912A, SQJ912, SQJ91, SQJ9, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJ912AEP-T1_GE3 विवरण

***ure Electronics: SQJ912AEP Series 30 V 30 A Automotive Dual N-Channel Mosfet - PowerPAK® SO-8L

***ow.cn: Trans MOSFET N-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO

***i-Key: MOSFET 2N-CH 40V 30A PPAK SO-8

***et: DUAL N-CHANNEL 40-V (D-S) 175C MOSFE

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0077Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: No

***ure Electronics: Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8

*** Source Electronics: MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R

***ment14 APAC: MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:17.6A; Power Dissipation Pd:3.8W; Voltage Vgs Max:20V

*** Source Electronics: Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK

***ark: Mosfet, P-Ch, 40V, 35A, To-252 Rohs Compliant: Yes |Diodes Inc. DMP4015SK3Q-13

***ure Electronics: DMP4015SK3Q Series 40 V 14 A P-Channel Enhancement Mode Mosfet - TO-252 (DPAK)

***nsix Microsemi: Power Field-Effect Transistor, 12A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***(Formerly Allied Electronics): SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO

***ure Electronics: Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8

***nell: MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***ure Electronics: Single N-Channel 30 V 8.5 mOhm 14 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 15A, 8.5 MOHM, 9.3 NC QG, PQFN

***Yang: Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R - Tape and Reel

***ment14 APAC: MOSFET, N-CH, 30V, 15A, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15mA; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

***ure Electronics: P-Channel 30 V 7.5 mOhm 126.2 nC SMT Enhancement Mode Mosfet - PowerDI

***ark: Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMP3010LPSQ-13

***ical: Trans MOSFET P-CH 30V 36A Automotive 8-Pin PowerDI EP T/R

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***nsix Microsemi: Buffer/Inverter Based MOSFET Driver

***i-Key: MOSFET P-CH 30V 36A PWRDI5060-8

***ment14 APAC: MOSFET, P-CH, 30V, 36A, POWERDI 5060;

***emi: 30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL

***r Electronics: Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: NTMFS4945NT3G, SINGLE MOSFETS;

SQJ912AEP-T1_GE3 थप जानकारी

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SQJ912AEP-T1-GE3 DISTI # V72:2272_09219249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	2986	1000:$0.4635 500:$0.6041 250:$0.6645 100:$0.7383 25:$0.8634 10:$1.0553 1:$1.2733
SQJ912AEP-T1-GE3 DISTI # V36:1790_09219249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	0	3000000:$0.4581 1500000:$0.4583 300000:$0.4708 30000:$0.4907 3000:$0.4939
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5345In Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5345In Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.4516 6000:$0.4692 3000:$0.4939
SQJ912AEP-T1-GE3 DISTI # 31686249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	2986	14:$1.2733
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ912AEP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 18000	30000:$0.4148 18000:$0.4253 12000:$0.4364 6000:$0.4480 3000:$0.4603
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R (Alt: SQJ912AEP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4609 18000:€0.4819 12000:€0.5449 6000:€0.6719 3000:€0.9369
SQJ912AEP-T1_GE3. DISTI # 23AC9821	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:48W,No. of Pins:8Pins RoHS Compliant: No	18000	30000:$0.4310 18000:$0.4430 12000:$0.4560 6000:$0.4750 1:$0.4890
SQJ912AEP-T1_GE3 DISTI # 78-SQJ912AEP-T1_GE3	Vishay Intertechnologies	MOSFET 40V 30A 48W AEC-Q101 Qualified RoHS: Compliant	4187	1:$1.1700 10:$0.9670 100:$0.7420 500:$0.6380 1000:$0.5030 3000:$0.4700 6000:$0.4460 9000:$0.4370
SQJ912AEP-T1-GE3 DISTI # 78-SQJ912AEP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 RoHS: Compliant	0
SQJ912AEP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 RoHS: Compliant	Americas -

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: ADM2484EBRWZ OMO.#: OMO-ADM2484EBRWZ	Digital Isolators 5kV Sgnl Iso 500kbps Full/Half Duplex
	Mfr.#: TPS3850H33QDRCRQ1 OMO.#: OMO-TPS3850H33QDRCRQ1	Supervisory Circuits VOLTAGE SUPERVISOR WITH WATCHDOG TIMER
	Mfr.#: NUP1301ML3T1G OMO.#: OMO-NUP1301ML3T1G	Rectifiers Low Cap. Diode Array For SNGL Line w/ESD
	Mfr.#: TPS2H160BQPWPRQ1 OMO.#: OMO-TPS2H160BQPWPRQ1	Power Switch ICs - Power Distribution Dual-channel High-Side Driver
	Mfr.#: RC0603FR-0713K3L OMO.#: OMO-RC0603FR-0713K3L	Thick Film Resistors - SMD 13.3K OHM 1%
	Mfr.#: 35F0121-0SR-10 OMO.#: OMO-35F0121-0SR-10-LAIRD-TECHNOLOGIES	EMI Filter Beads, Chips & Arrays 42ohms 10MHz 10A Low Frequency
	Mfr.#: RT0603BRD0721K5L OMO.#: OMO-RT0603BRD0721K5L-YAGEO	Thin Film Resistors - SMD 1/10W 21.5K ohm .1% 25ppm
	Mfr.#: ADM2484EBRWZ OMO.#: OMO-ADM2484EBRWZ-ANALOG-DEVICES-INC-ADI	Digital Isolators 5kV Sgnl Iso 500kbps Full/Half Duplex
	Mfr.#: NUP1301ML3T1G OMO.#: OMO-NUP1301ML3T1G-ON-SEMICONDUCTOR	नयाँ र मौलिक
	Mfr.#: TPS2H160BQPWPRQ1 OMO.#: OMO-TPS2H160BQPWPRQ1-TEXAS-INSTRUMENTS	IC PWR SWITCH N-CH 1:1 16HTSSOP

उपलब्धता

स्टक:: Available
अर्डर मा:: 1986
मात्रा प्रविष्ट गर्नुहोस्:

SQJ912AEP-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.१७~~; ~~US$ १.१७~~

10: ~~US$ ०.९७~~; ~~US$ ९.६७~~

100: ~~US$ ०.७४~~; ~~US$ ७४.२०~~

500: ~~US$ ०.६४~~; ~~US$ ३१९.००~~

1000: ~~US$ ०.५०~~; ~~US$ ५०३.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SQJ912A 3
SQJ912 7
SQJ91 11
SQJ9 53
SQJ 248

नवीनतम उत्पादनहरू

SUM70101EL 100 V P-Channel MOSFET

Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
Compare SQJ912AEP-T1_GE3

SQJ912 vs SQJ912AEPT1 vs SQJ912AEPT1GE3
SiP32452, SiP32453 Load Switch

Vishay's load switches have a low input logic control threshold and a fast turn on time.
PowerPAIR®

Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.

More Newest Products

SQJ912AEP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes