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SIHG80N60E-GE3

SIHG80N60E-GE3
Mfr. #:
SIHG80N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs TO-247AC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHG80N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG80N60E-GE3 DatasheetSIHG80N60E-GE3 Datasheet (P4-P6)SIHG80N60E-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHG80N60E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247AC-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
26 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
295 ns
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
520 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
153 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
239 ns
सामान्य टर्न-अन ढिलाइ समय:
63 ns
एकाइ वजन:
0.068784 oz
Tags
SIHG, SIH
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 80A 3-Pin(3+Tab) TO-247AC
***i-Key
MOSFET N-CH 600V 80A TO247AC
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHG80N60E-GE3
DISTI # V36:1790_17597471		Vishay IntertechnologiesSIHG80N60E-GE3
9172
3106812		0
  • 500000:$7.3980
  • 250000:$7.4050
  • 50000:$8.6450
  • 5000:$11.4300
  • 500:$11.9300
SIHG80N60E-GE3
DISTI # V99:2348_17597471		Vishay IntertechnologiesSIHG80N60E-GE3
9172
3106812		0
    SIHG80N60E-GE3
    DISTI # SIHG80N60E-GE3-ND    		Vishay SiliconixMOSFET N-CH 600V 80A TO247AC
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		495In Stock
    • 500:$8.2611
    • 100:$9.2866
    • 25:$10.5400
    • 10:$10.9960
    • 1:$11.9600
    SIHG80N60E-GE3
    DISTI # SIHG80N60E-GE3    		Vishay IntertechnologiesPower MOSFET N-Channel 600V 80A 3-Pin TO-247AC (Alt: SIHG80N60E-GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€6.7900
    • 500:€6.9900
    • 100:€7.1900
    • 50:€7.2900
    • 25:€8.0900
    • 10:€9.8900
    • 1:€12.5900
    SIHG80N60E-GE3
    DISTI # SIHG80N60E-GE3    		Vishay IntertechnologiesPower MOSFET N-Channel 600V 80A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG80N60E-GE3)
    RoHS: Not Compliant
    Min Qty: 500
    Container: Reel    		Americas - 0
      SIHG80N60E-GE3
      DISTI # 20AC3823      		Vishay IntertechnologiesN-CHANNEL 600V0
      • 500:$6.7900
      • 250:$7.3300
      • 100:$7.6000
      • 50:$8.1400
      • 25:$9.2800
      • 10:$9.9900
      • 1:$10.5300
      SIHG80N60E-GE3
      DISTI # 78-SIHG80N60E-GE3      		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
      RoHS: Compliant      		805
      • 1:$11.9300
      • 10:$10.8500
      • 25:$10.0300
      • 50:$9.4900
      • 100:$9.2200
      • 250:$8.4000
      • 500:$7.8600
      • 1000:$7.2100
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      Mfr.#: IPW60R070CFD7XKSA1

      OMO.#: OMO-IPW60R070CFD7XKSA1

      		 MOSFET HIGH POWER_NEW
      ES1J

      Mfr.#: ES1J

      OMO.#: OMO-ES1J

      		 Rectifiers 1.0 A Ultra Fast Recovery Rect
      2N7002LT1G

      Mfr.#: 2N7002LT1G

      OMO.#: OMO-2N7002LT1G

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      Mfr.#: B59850C0120A070

      OMO.#: OMO-B59850C0120A070-EPCOS

      		 Thermistor PTC 10 Ohm 25% 2-Pin Radial Cardboard Strip
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      Mfr.#: FSMSM

      OMO.#: OMO-FSMSM-TE-CONNECTIVITY

      		 Tactile Switches 3.5X6 SMT TACT TACT SWITCH
      STM32F103CBT6

      Mfr.#: STM32F103CBT6

      OMO.#: OMO-STM32F103CBT6-STMICROELECTRONICS

      		 IC MCU 32BIT 128KB FLASH 48LQFP
      उपलब्धता
      स्टक:
      777
      अर्डर मा:
      2760
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHG80N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ११.९३
      US$ ११.९३
      10
      US$ १०.८५
      US$ १०८.५०
      25
      US$ १०.०३
      US$ २५०.७५
      50
      US$ ९.४९
      US$ ४७४.५०
      100
      US$ ९.२२
      US$ ९२२.००
      250
      US$ ८.४०
      US$ २ १००.००
      500
      US$ ७.८६
      US$ ३ ९३०.००
      1000
      US$ ७.२१
      US$ ७ २१०.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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