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VBH40-05B

VBH40-05B
Mfr. #:
VBH40-05B
निर्माता:
IXYS
विवरण:
Discrete Semiconductor Modules 40 Amps 500V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
VBH40-05B डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
VBH40-05B Datasheet
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
IXYS
उत्पादन कोटि
मोड्युल
शृङ्खला
HiPerFET
उत्पादन
पावर सेमीकन्डक्टर मोड्युलहरू
टाइप गर्नुहोस्
H-Bridge MOSFET मोड्युलहरू
प्याकेजिङ
थोक
माउन्टिङ-शैली
पेंच
प्याकेज-केस
V2-PAK
सञ्चालन - तापक्रम
-40°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
चेसिस माउन्ट
आपूर्तिकर्ता-उपकरण-प्याकेज
V2-PAK
FET-प्रकार
4 N-Channel (H-Bridge)
पावर-अधिकतम
-
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
500V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
40A
Rds-on-max-Id-Vgs
116 mOhm @ 30A, 10V
Vgs-th-max-Id
4V @ 8mA
गेट-चार्ज-Qg-Vgs
270nC @ 10V
Tags
VBH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ukat
N-Ch-H-Bridge+Rectif. 500V 40A V2-Pack
***i-Key
MOSFET 4N-CH 500V 40A V2
***el Nordic
Contact for details
***icroelectronics
N-Channel 500V - 0.08 Ohm - 48A - ISOTOP MDmesh MOSFET
***ser
Power MOSFET Transistors N-Ch 500 Volt 48 Amp
***ical
Trans MOSFET N-CH 500V 48A 4-Pin ISOTOP Tube
***ure Electronics
N-Channel 550 V 0.1 O MDmesh™ Power Mosfet - ISOTOP
***(Formerly Allied Electronics)
MOSFET N-Channel 500V 48A ISOTOP4
***r Electronics
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***et
STMICROELECTRONICS STE48NM50 MOSFETS
***ment14 APAC
MOSFET, N CH, 550V, 48A, ISOTOP; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:550V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:450W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:48A; Package / Case:ISOTOP; Power Dissipation Pd:450W; Termination Type:Screw; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET
***ser
Power MOSFET Transistors N-Ch 600 Volt 40 Amp
***ical
Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 600V 40A ISOTOP4
***ukat
N-Ch 600V 40A 460W 0,13R SOT227B
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 40A, ISOTOP, Tube
***et
STMICROELECTRONICS STE40NC60 MOSFETS
***nell
MOSFET, N SOT-227; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P
***icroelectronics
N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET
***ark
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 53 / Drain-Source Voltage (Vds) V = 500 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 30 / Fall Time ns = 38 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 46 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = ISOTOP / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Power Dissipation (Pd) W = 460
***icroelectronics
N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET
***ser
Power MOSFET Transistors N-Ch 500 Volt 70 Amp
***ical
Trans MOSFET N-CH 500V 70A 4-Pin ISOTOP Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 500V 70A MDMESH ISOTOP4
***ponent Stockers USA
70 A 500 V 0.05 ohm N-CHANNEL Si POWER MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***et
STMICROELECTRONICS STE70NM50 MOSFETS
***nell
MOSFET, N CH, 500V, 70A, ISOTOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 600W; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Screw; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
STGE200NB60S Series N-Channel 600 V 200 A Low Drop PowerMESH IGBT - ISOTOP
***ical
Trans IGBT Module N-CH 600V 200A 600000mW 4-Pin ISOTOP Tube
***el Electronic
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 150Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 200A ISOTOP4
***ronik
IGBT 600V 200A 1.6V ISOTOP RoHSconf
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, ISOTOP, Tube
***trelec
N-Channel IGBT, 600V, 200A, ISOTOP
***nell
IGBT MODULE, 600V, 200A, 600W; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 1.2V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4
***i-Key
IGBT MOD 600V 200A 600W ISOTOP
***icroelectronics
N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP package
***ure Electronics
N-Channel 650 V 15 mO 414 nC Chassis Mount Power Mosfet - ISOTOP
***ark
MOSFET, N-CH, 650V, 143A, ISOTOP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:143A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:4Pins RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
VBH40-05B
DISTI # VBH40-05B-ND		IXYS CorporationMOSFET 4N-CH 500V 40A V2
RoHS: Compliant
Min Qty: 6
Container: Box		Temporarily Out of Stock
  • 6:$82.2033
VBH40-05B
DISTI # 747-VBH40-05B		IXYS CorporationDiscrete Semiconductor Modules 40 Amps 500V
RoHS: Compliant		0
    छवि भाग # विवरण
    VBH40-05B

    Mfr.#: VBH40-05B

    OMO.#: OMO-VBH40-05B-IXYS-CORPORATION

    		 Discrete Semiconductor Modules 40 Amps 500V
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1500
    मात्रा प्रविष्ट गर्नुहोस्:
    VBH40-05B को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १२३.३०
    US$ १२३.३०
    10
    US$ ११७.१४
    US$ १ १७१.४०
    100
    US$ ११०.९७
    US$ ११ ०९७.४५
    500
    US$ १०४.८१
    US$ ५२ ४०४.६०
    1000
    US$ ९८.६४
    US$ ९८ ६४४.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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