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IPD082N10N3GATMA1

IPD082N10N3GATMA1
Mfr. #:
IPD082N10N3GATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET MV POWER MOS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPD082N10N3GATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PG-TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
8.2 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
42 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
2.3 mm
लम्बाइ:
6.5 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
45 S
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
42 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
31 ns
सामान्य टर्न-अन ढिलाइ समय:
18 ns
भाग # उपनाम:
G IPD082N10N3 SP001127824
एकाइ वजन:
0.139332 oz
Tags
IPD082N10N3G, IPD082, IPD08, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK
***p One Stop Japan
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 100V, 80A, 175Deg C, 125W; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.007Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
भाग # Mfg। विवरण स्टक मूल्य
IPD082N10N3GATMA1
DISTI # 33708613		Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.7907
IPD082N10N3GATMA1
DISTI # IPD082N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8475In Stock
  • 1000:$0.8092
  • 500:$0.9766
  • 100:$1.1887
  • 10:$1.4790
  • 1:$1.6500
IPD082N10N3GATMA1
DISTI # IPD082N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 80A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8475In Stock
  • 1000:$0.8092
  • 500:$0.9766
  • 100:$1.1887
  • 10:$1.4790
  • 1:$1.6500
IPD082N10N3GATMA1
DISTI # IPD082N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 80A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 12500:$0.6863
  • 5000:$0.7043
  • 2500:$0.7314
IPD082N10N3GATMA1
DISTI # V36:1790_06384005		Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500:$0.7213
IPD082N10N3GATMA1
DISTI # V72:2272_06384005		Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD082N10N3GATMA1
    DISTI # IPD082N10N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD082N10N3GATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.5239
    • 15000:$0.5339
    • 10000:$0.5519
    • 5000:$0.5729
    • 2500:$0.5939
    IPD082N10N3GATMA1
    DISTI # SP001127824    		Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R (Alt: SP001127824)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.5319
    • 15000:€0.5729
    • 10000:€0.6199
    • 5000:€0.6769
    • 2500:€0.8269
    IPD082N10N3GATMA1
    DISTI # 12AC9706    		Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes3080
    • 1000:$0.7560
    • 500:$0.9130
    • 250:$0.9770
    • 100:$1.0400
    • 50:$1.1300
    • 25:$1.2200
    • 10:$1.3000
    • 1:$1.5300
    IPD082N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - DPAK
    RoHS: Not Compliant    		2500Reel
    • 2500:$0.5650
    IPD082N10N3GATMA1
    DISTI # 726-IPD082N10N3GA    		Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant    		3739
    • 1:$1.5100
    • 10:$1.2900
    • 100:$1.0300
    • 500:$0.9040
    • 1000:$0.7490
    • 2500:$0.6970
    • 5000:$0.6710
    • 10000:$0.6450
    IPD082N10N3GATMA1
    DISTI # IPD082N10N3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO252-31137
    • 1000:$0.6993
    • 100:$0.7511
    • 10:$0.8649
    • 3:$0.9786
    • 1:$1.0879
    IPD082N10N3GATMA1
    DISTI # 2709872    		Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-252
    RoHS: Compliant    		2999
    • 1000:$1.3000
    • 500:$1.5800
    • 100:$2.0100
    • 10:$2.5000
    • 1:$2.7700
    IPD082N10N3GATMA1
    DISTI # XSFP00000104878    		Infineon Technologies AG 
    RoHS: Compliant    		5000 in Stock0 on Order
    • 5000:$0.7533
    • 2500:$0.8071
    IPD082N10N3GATMA1
    DISTI # 2709872    		Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-2526312
    • 500:£0.7030
    • 250:£0.7520
    • 100:£0.8010
    • 10:£1.0600
    • 1:£1.3400
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    		 Headers & Wire Housings .100" (2.54 mm) Tiger Claw Surface Mount Socket Strip
    B72580T0300K062

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    OMO.#: OMO-B72580T0300K062

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    OMO.#: OMO-LM5010SD-NOPB-TEXAS-INSTRUMENTS

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    D2510-6V0C-AR-WD

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    OMO.#: OMO-D2510-6V0C-AR-WD-3M

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    OMO.#: OMO-B72580T0300K062-EPCOS

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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1987
    मात्रा प्रविष्ट गर्नुहोस्:
    IPD082N10N3GATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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