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SI7456CDP-T1-GE3

SI7456CDP-T1-GE3
Mfr. #:
SI7456CDP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 100V 27.5A 35.7W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7456CDP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7456CDP-T1-GE3 DatasheetSI7456CDP-T1-GE3 Datasheet (P4-P6)SI7456CDP-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SI7
चौडाइ:
5.15 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.017870 oz
Tags
SI7456, SI745, SI74, SI7
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 100V 27.5A PPAK SO-8
***
100V, 25 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0195Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:5W; No. Of Pins:8Pins Rohs Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:19500µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:10.3A; Power Dissipation:5W
***ment14 APAC
MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
भाग # Mfg। विवरण स्टक मूल्य
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.8019
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8871
  • 500:$1.0707
  • 100:$1.3766
  • 10:$1.7130
  • 1:$1.9000
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8871
  • 500:$1.0707
  • 100:$1.3766
  • 10:$1.7130
  • 1:$1.9000
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7456CDP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7859
  • 6000:$0.7619
  • 12000:$0.7309
  • 18000:$0.7109
  • 30000:$0.6919
SI7456CDP-T1-GE3
DISTI # 86R3925		Vishay IntertechnologiesMOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V0
  • 1:$0.7890
  • 3000:$0.7830
  • 6000:$0.7460
SI7456CDP-T1-GE3.
DISTI # 30AC0199		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.7890
  • 3000:$0.7830
  • 6000:$0.7460
SI7456CDP-T1-GE3
DISTI # 78-SI7456CDP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 27.5A 35.7W
RoHS: Compliant		0
  • 1:$1.6800
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9460
  • 1000:$0.9010
  • 3000:$0.9000
SI7456CDP-T1-GE3Vishay IntertechnologiesMOSFET 100V 27.5A 35.7WAmericas -
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    स्टक:
    Available
    अर्डर मा:
    5500
    मात्रा प्रविष्ट गर्नुहोस्:
    SI7456CDP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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    10
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    1000
    US$ ०.७८
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