FCH35N60

FCH35N60
Mfr. #:
FCH35N60
निर्माता:
ON Semiconductor
विवरण:
Darlington Transistors MOSFET 600V N-Channel SuperFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FCH35N60 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
FSC
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.225401 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
TO-247-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
312.5 W
पतन-समय
73 ns
उदय-समय
120 ns
Vgs-गेट-स्रोत-भोल्टेज
30 V
आईडी-निरन्तर-नाली-वर्तमान
35 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
600 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
5 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
79 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
105 ns
सामान्य-टर्न-अन-डिले-समय
34 ns
Qg-गेट-चार्ज
139 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
28.8 S
Tags
FCH3, FCH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
***p One Stop Global
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Rail
***Components
MOSFET SuperFET kanał N 600V 35A TO-247
***i-Key
MOSFET N-CH 600V 35A TO-247
***ark
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; No. of Pins:3 ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:105A
***ment14 APAC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
भाग # Mfg। विवरण स्टक मूल्य
FCH35N60
DISTI # FCH35N60-ND
ON SemiconductorMOSFET N-CH 600V 35A TO-247
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$5.1425
FCH35N60
DISTI # FCH35N60
ON SemiconductorTrans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FCH35N60)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$3.4900
  • 900:$3.4900
  • 1800:$3.4900
  • 2700:$3.3900
  • 4500:$3.2900
FCH35N60
DISTI # 92R5508
ON SemiconductorSF1 600V 98MOHM E TO247 / TUBE0
  • 1:$5.7800
  • 10:$4.9600
  • 100:$4.6300
  • 500:$4.2700
  • 1000:$4.0000
FCH35N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
RoHS: Compliant
36685
  • 1000:$5.9200
  • 500:$6.2300
  • 100:$6.4900
  • 25:$6.7700
  • 1:$7.2900
FCH35N60
DISTI # 512-FCH35N60
ON SemiconductorMOSFET 600V N-Channel SuperFET
RoHS: Compliant
356
  • 1:$6.5500
  • 10:$5.9200
  • 25:$5.6400
  • 100:$4.9000
  • 250:$4.6800
FCH35N60
DISTI # 2083215
ON SemiconductorMOSFET, N CH, 600V, 35A, TO-247
RoHS: Compliant
180
  • 1:$10.3700
  • 10:$9.3700
  • 25:$8.9300
  • 100:$7.7500
  • 250:$7.4100
FCH35N60
DISTI # 2083215
ON SemiconductorMOSFET, N CH, 600V, 35A, TO-247
RoHS: Compliant
181
  • 1:£5.4600
  • 5:£4.9600
  • 10:£4.2700
  • 50:£4.2600
  • 100:£4.2500
छवि भाग # विवरण
FCH301

Mfr.#: FCH301

OMO.#: OMO-FCH301-1190

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नयाँ र मौलिक
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OMO.#: OMO-FCH30A09-1190

नयाँ र मौलिक
FCH30B15

Mfr.#: FCH30B15

OMO.#: OMO-FCH30B15-1190

नयाँ र मौलिक
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Mfr.#: FCH3216-R47M

OMO.#: OMO-FCH3216-R47M-1190

नयाँ र मौलिक
FCH3216F-1R0K

Mfr.#: FCH3216F-1R0K

OMO.#: OMO-FCH3216F-1R0K-1190

नयाँ र मौलिक
FCH3216F-R47M

Mfr.#: FCH3216F-R47M

OMO.#: OMO-FCH3216F-R47M-1190

नयाँ र मौलिक
FCH35N60.

Mfr.#: FCH35N60.

OMO.#: OMO-FCH35N60--1190

नयाँ र मौलिक
FCH36N60NF

Mfr.#: FCH36N60NF

OMO.#: OMO-FCH36N60NF-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
FCH35N60 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४.९४
US$ ४.९४
10
US$ ४.६९
US$ ४६.८८
100
US$ ४.४४
US$ ४४४.१५
500
US$ ४.१९
US$ २ ०९७.४०
1000
US$ ३.९५
US$ ३ ९४८.००
बाट सुरु गर्नुहोस्
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