IRFB4115GPBF

IRFB4115GPBF
Mfr. #:
IRFB4115GPBF
निर्माता:
Infineon Technologies
विवरण:
MOSFET MOSFT 150V 104A 11mOhm 77nCAB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRFB4115GPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB4115GPBF DatasheetIRFB4115GPBF Datasheet (P4-P6)IRFB4115GPBF Datasheet (P7-P8)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
आईडी - निरन्तर ड्रेन वर्तमान:
104 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
9.3 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
77 nC
Pd - शक्ति अपव्यय:
380 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
ट्यूब
उचाइ:
15.65 mm
लम्बाइ:
10 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.4 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SP001572390
एकाइ वजन:
0.211644 oz
Tags
IRFB4115, IRFB411, IRFB41, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
*** Source Electronics
Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 104A TO220AB
***ure Electronics
Single N-Channel 150 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, 150V, 104A, 11 MOHM, 77 NC QG, TO220AB, HALOGEN-FREE
***ment14 APAC
N CH MOSFET, 150V, 104A, TO-220AB; Trans; N CH MOSFET, 150V, 104A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; MSL:-
***ure Electronics
Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB
***roFlash
Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***eco
Transistor MOSFET N Channel 150 Volt 8 Amp 3-Pin 3+ Tab TO-220AB Tube
***ure Electronics
N-Channel 150 V 16 mO Flange Mount PowerTrench Mosfet - TO-220AB
***emi
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
***Yang
Trans MOSFET N-CH 150V 8A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:430A; SMD Marking:FDP2532; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***p One Stop Global
Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB
*** Electronics
MOSFET 150V 85A 300W 21mohm @ 10V
***
150V N-CH 175 DEG.C RATED TREN
***ment14 APAC
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:150V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.4W; MSL:-
***(Formerly Allied Electronics)
IRFB4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-220AB
*** Source Electronics
Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 83A TO-220AB
***ure Electronics
Single N-Channel 150V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:83A; N-channel Gate Charge:71nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***ineon SCT
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 150V, 83A, 15 MOHM, 72 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 330 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 150V, 83A, TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 330W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 4228; Current Id Max: 83A; Driver Case Style: TO-220AB; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Output Resistance: 0.012ohm; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 150V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V
***ure Electronics
Single N-Channel 150 V 0.146 Ohm 34 nC 135 W Flange Mount Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 150V 4A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ
***ter Electronics
TO-220AB, SINGLE, N-CH, 150V, 57MOHM ULTRAFET TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH 29A 150V, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:29A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
भाग # Mfg। विवरण स्टक मूल्य
IRFB4115GPBF
DISTI # 24111165
Infineon Technologies AGTrans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
996
  • 250:$2.1696
  • 100:$2.2848
  • 50:$2.4384
  • 25:$2.5728
  • 6:$3.4272
IRFB4115GPBF
DISTI # 31238418
Infineon Technologies AGTrans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
600
  • 50:$3.0400
IRFB4115GPBF
DISTI # IRFB4115GPBF-ND
Infineon Technologies AGMOSFET N-CH 150V 104A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
1149In Stock
  • 1000:$2.7527
  • 500:$3.2640
  • 100:$4.0308
  • 10:$4.9160
  • 1:$5.5100
IRFB4115GPBF
DISTI # C1S322000488571
Infineon Technologies AGTrans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
1000
  • 1000:$2.2400
  • 500:$2.4100
  • 100:$3.1500
  • 50:$3.4300
  • 10:$4.1700
  • 1:$6.4400
IRFB4115GPBF
DISTI # IRFB4115GPBF
Infineon Technologies AGTrans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4115GPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$1.9900
  • 2000:$1.8900
  • 4000:$1.8900
  • 6000:$1.7900
  • 10000:$1.7900
IRFB4115GPBF
DISTI # SP001572390
Infineon Technologies AGTrans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB (Alt: SP001572390)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.0900
  • 10:€1.9900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.6900
  • 500:€1.6900
  • 1000:€1.5900
IRFB4115GPBF
DISTI # 70019678
Infineon Technologies AGIRFB4115GPBF N-channel MOSFET Transistor,104 A,150 V,3-Pin TO-220AB
RoHS: Compliant
0
  • 200:$4.6400
IRFB4115GPBFInfineon Technologies AG 
RoHS: Not Compliant
100
  • 1000:$2.2200
  • 500:$2.3400
  • 100:$2.4300
  • 25:$2.5400
  • 1:$2.7300
IRFB4115GPBFInfineon Technologies AGSingle N-Channel 150 V 11 mOhm 120 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant
1000Tube
  • 5:$3.3800
  • 25:$2.8600
  • 50:$2.7500
  • 250:$2.5300
IRFB4115GPBF
DISTI # 942-IRFB4115GPBF
Infineon Technologies AGMOSFET MOSFT 150V 104A 11mOhm 77nCAB
RoHS: Compliant
446
  • 1:$4.7400
  • 10:$4.0300
  • 100:$3.4900
  • 250:$3.3100
  • 500:$2.9700
  • 1000:$2.5100
  • 2000:$2.3800
IRFB4115GPBF
DISTI # 8273953P
Infineon Technologies AGHEXFET N-CH MOSFET 104A 150V TO-220AB, TU32
  • 50:£2.9100
  • 100:£2.5200
  • 250:£2.3900
  • 500:£2.1550
IRFB4115GPBFInternational Rectifier104 A, 150 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB227
  • 86:$2.0280
  • 9:$2.3400
  • 1:$4.6800
IRFB4115GPBF
DISTI # XSFP00000020582
Infineon Technologies AGPower Field-Effect Transistor,120AI(D),75V,0.0058ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
RoHS: Compliant
673
  • 50:$4.5100
  • 673:$4.2200
छवि भाग # विवरण
IR2113PBF

Mfr.#: IR2113PBF

OMO.#: OMO-IR2113PBF

Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
EMK212BB7106KG-T

Mfr.#: EMK212BB7106KG-T

OMO.#: OMO-EMK212BB7106KG-T

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 16V X7R 10% 0805
FA28C0G1H471JNU00

Mfr.#: FA28C0G1H471JNU00

OMO.#: OMO-FA28C0G1H471JNU00

Multilayer Ceramic Capacitors MLCC - Leaded 50V 470pF C0G 5% RAD LS:5mm AEC-Q200
IR2113PBF

Mfr.#: IR2113PBF

OMO.#: OMO-IR2113PBF-INFINEON-TECHNOLOGIES

IC MOSFET DVR HI/LO SIDE 14-DIP
B66389GX187

Mfr.#: B66389GX187

OMO.#: OMO-B66389GX187-1161

EMI/RFI Suppressors & Ferrites Ferrite Cores & Accessories FERRITE CORES & ACCESSORIES
0251.500MAT1L

Mfr.#: 0251.500MAT1L

OMO.#: OMO-0251-500MAT1L-LITTELFUSE

Fuses with Leads (Through Hole) 125V .5A
UJ31-CH-G2-SMT-TR

Mfr.#: UJ31-CH-G2-SMT-TR

OMO.#: OMO-UJ31-CH-G2-SMT-TR-CUI

USB jack 3.1, C type, 24 pin, horizonal, gold plating, surface mount, T&R
उपलब्धता
स्टक:
440
अर्डर मा:
2423
मात्रा प्रविष्ट गर्नुहोस्:
IRFB4115GPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४.७४
US$ ४.७४
10
US$ ४.०३
US$ ४०.३०
100
US$ ३.४९
US$ ३४९.००
250
US$ ३.३१
US$ ८२७.५०
500
US$ २.९७
US$ १ ४८५.००
1000
US$ २.५१
US$ २ ५१०.००
2000
US$ २.३८
US$ ४ ७६०.००
5000
US$ २.२९
US$ ११ ४५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • XC6227 Series Regulator
    Torex's XC6227 series is a high-speed LDO regulator with the ability to operate with high accuracy, low noise, and high ripple rejection.
  • XMC4700 and XMC4800 Family of Microcontrollers
    Infineon Technologies’ XMC4700 and XMC4800 devices are members of the XMC4000 family of microcontrollers based on the ARM Cortex-M4 processor core.
  • Compare IRFB4115GPBF
    IRFB4115 vs IRFB4115G vs IRFB4115GPBF
  • TLF502x1EL Step-Down DC / DC
    Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
  • XC9261 Series Step-Down DC/DC Converters
    Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
  • LITIX™ Automotive LED Driver ICs
    LITIX automotive LED driver ICs from Infineon use a constant-current regulator that enables stable brightness over the whole automotive temperature and voltage range.
Top