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BSC034N06NS

BSC034N06NS
Mfr. #:
BSC034N06NS
निर्माता:
Infineon Technologies
विवरण:
MOSFET DIFFERENTIATED MOSFETS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC034N06NS डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PG-TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
3.4 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.1 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
33 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
74 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
शृङ्खला:
OptiMOS 5
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
46 S
पतन समय:
5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
5 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
19 ns
सामान्य टर्न-अन ढिलाइ समय:
9 ns
भाग # उपनाम:
BSC034N06NSATMA1 SP001067010
एकाइ वजन:
0.006702 oz
Tags
BSC034N06, BSC034, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
BSC034N06NS
DISTI # 31073490		Infineon Technologies AG0160
  • 100:$1.0595
  • 50:$1.2521
  • 10:$1.5300
  • 9:$2.9962
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.7150
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
BSC034N06NS
DISTI # C1S322000636938		Infineon Technologies AGMOSFETs160
  • 100:$0.8310
  • 50:$0.9820
  • 10:$1.2000
  • 1:$2.3500
BSC034N06NSATMA1
DISTI # BSC034N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC034N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5759
  • 10000:$0.5549
  • 20000:$0.5349
  • 30000:$0.5169
  • 50000:$0.5079
BSC034N06NSATMA1
DISTI # 34AC1376		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes0
  • 1:$1.4800
  • 10:$1.2500
  • 25:$1.1700
  • 50:$1.0800
  • 100:$1.0000
  • 250:$0.9380
  • 500:$0.8760
  • 1000:$0.7250
BSC034N06NS
DISTI # 726-BSC034N06NS		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		0
  • 1:$1.4800
  • 10:$1.2500
  • 100:$1.0000
  • 500:$0.8760
  • 1000:$0.7250
  • 2500:$0.6760
  • 5000:$0.6510
BSC034N06NSATMA1
DISTI # 726-BSC034N06NSATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		0
  • 1:$1.4800
  • 10:$1.2500
  • 100:$1.0000
  • 500:$0.8760
  • 1000:$0.7250
  • 2500:$0.6760
  • 5000:$0.6510
BSC034N06NSATMA1
DISTI # 2781053		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON
RoHS: Compliant		0
  • 5:£1.3100
  • 25:£1.1900
  • 100:£0.9560
BSC034N06NSATMA1
DISTI # 2781053		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON
RoHS: Compliant		0
  • 5:$2.5100
  • 25:$2.1800
  • 100:$1.7800
छवि भाग # विवरण
BSC030N04NS G

Mfr.#: BSC030N04NS G

OMO.#: OMO-BSC030N04NS-G

 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC035N10NS5ATMA1

Mfr.#: BSC035N10NS5ATMA1

OMO.#: OMO-BSC035N10NS5ATMA1

 MOSFET 100VPower transistor OptiMOS 5
BSC030NO3LS

Mfr.#: BSC030NO3LS

OMO.#: OMO-BSC030NO3LS-1190

 नयाँ र मौलिक
BSC030P03NS3G

Mfr.#: BSC030P03NS3G

OMO.#: OMO-BSC030P03NS3G-1190

 नयाँ र मौलिक
BSC030PNS

Mfr.#: BSC030PNS

OMO.#: OMO-BSC030PNS-1190

 नयाँ र मौलिक
BSC034N03LS G

Mfr.#: BSC034N03LS G

OMO.#: OMO-BSC034N03LS-G-1190

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC036NE7NS3G

Mfr.#: BSC036NE7NS3G

OMO.#: OMO-BSC036NE7NS3G-1190

 POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC039N06NS

Mfr.#: BSC039N06NS

OMO.#: OMO-BSC039N06NS-1190

 Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP
BSC039N08NS5

Mfr.#: BSC039N08NS5

OMO.#: OMO-BSC039N08NS5-1190

 MOSFETs
BSC030N08NS5ATMA1

Mfr.#: BSC030N08NS5ATMA1

OMO.#: OMO-BSC030N08NS5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 80V 100A
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
BSC034N06NS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.८३
US$ १.८३
10
US$ १.५६
US$ १५.६०
100
US$ १.२५
US$ १२५.००
500
US$ १.०९
US$ ५४५.००
1000
US$ ०.९१
US$ ९०७.००
2500
US$ ०.८४
US$ २ ११०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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