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IDH02G120C5XKSA1

IDH02G120C5XKSA1
Mfr. #:
IDH02G120C5XKSA1
निर्माता:
Infineon Technologies
विवरण:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IDH02G120C5XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IDH02G120C5XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
Schottky डायोड्स र Rectifiers
RoHS:
Y
उत्पादन:
Schottky सिलिकन कार्बाइड डायोड
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-2
यदि - फर्वार्ड वर्तमान:
2 A
Vrrm - दोहोरिने उल्टो भोल्टेज:
1.2 kV
Vf - फर्वार्ड भोल्टेज:
1.4 V
Ifsm - फर्वार्ड सर्ज वर्तमान:
37 A
कन्फिगरेसन:
एकल
प्रविधि:
SiC
Ir - उल्टो वर्तमान:
1.2 uA
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
ब्रान्ड:
Infineon टेक्नोलोजीहरू
Pd - शक्ति अपव्यय:
75 W
उत्पादन प्रकार:
Schottky डायोड्स र Rectifiers
कारखाना प्याक मात्रा:
500
उपश्रेणी:
डायोड र रेक्टिफायरहरू
व्यापार नाम:
CoolSiC
Vr - उल्टो भोल्टेज:
1.2 kV
भाग # उपनाम:
IDH02G120C5 SP001079720
एकाइ वजन:
0.211644 oz
Tags
IDH02G, IDH02, IDH0, IDH
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC
***ineon SCT
1200 V Silicion Carbide Schottky diode in TO-220 real2pin package, PG-TO220-2, RoHS
***ow.cn
Rectifier Diode Schottky 1.2KV 11.8A 2-Pin(2+Tab) TO-220 Tube
***ure Electronics
IDH02G120C5 Series 1200 V 2 A 5th Generation ThinQ!™ SiC Schottky Diode-TO-220-2
***nell
SILICON CARBIDE SCHOTTKY DIODE, 1.2KV; Product Range: -; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 1.2kV; Continuous Forward Current If: 11.8A; Total Capacitive Charge Qc: 14nC; Diode Case Style: TO-220
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
भाग # Mfg। विवरण स्टक मूल्य
IDH02G120C5XKSA1
DISTI # V99:2348_09156845		Infineon Technologies AGDiode Schottky 1.2KV 11.8A 2-Pin(2+Tab) TO-220 Tube
RoHS: Compliant		604
  • 5000:$1.4230
  • 2500:$1.4729
  • 1000:$1.5350
  • 500:$1.7210
  • 250:$1.9040
  • 100:$2.0050
  • 10:$2.2759
  • 1:$2.6160
IDH02G120C5XKSA1
DISTI # IDH02G120C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 1200V 2A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.6704
  • 500:$1.9806
  • 100:$2.3266
  • 50:$2.6846
  • 1:$3.1600
IDH02G120C5XKSA1
DISTI # 29444380		Infineon Technologies AGDiode Schottky 1.2KV 11.8A 2-Pin(2+Tab) TO-220 Tube
RoHS: Compliant		604
  • 500:$1.7660
  • 100:$2.0360
  • 10:$2.2890
  • 5:$2.6070
IDH02G120C5XKSA1
DISTI # IDH02G120C5XKSA1		Infineon Technologies AGDiode Schottky Diode 1200V 11.8A 2-Pin TO-220 Tube - Rail/Tube (Alt: IDH02G120C5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.5900
  • 1000:$1.4900
  • 2000:$1.4900
  • 3000:$1.3900
  • 5000:$1.3900
IDH02G120C5XKSA1
DISTI # 84Y5907		Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:11.8A,Total Capacitive Charge Qc:14nC,Diode Case Style:TO-220,No. of , RoHS Compliant: Yes336
  • 1:$3.0100
  • 10:$2.5600
  • 25:$2.4500
  • 50:$2.3300
  • 100:$2.2200
  • 250:$2.1100
  • 500:$1.8900
IDH02G120C5XKSA1
DISTI # 726-IDH02G120C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant		803
  • 1:$3.0100
  • 10:$2.5600
  • 100:$2.2200
  • 250:$2.1100
  • 500:$1.8900
  • 1000:$1.6000
  • 2500:$1.5200
  • 5000:$1.4600
IDH02G120C5XKSA1
DISTI # 1338550		Infineon Technologies AGSIC SCHOTTKY DIODE 1200V 2A TO-220-2, TU408
  • 500:£1.4690
  • 1500:£1.3650
IDH02G120C5XKSA1
DISTI # 2564810		Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant		354
  • 1:£2.3200
  • 10:£1.9700
  • 100:£1.7100
  • 250:£1.6300
  • 500:£1.4600
IDH02G120C5XKSA1
DISTI # C1S322000579147		Infineon Technologies AGRectifier Diodes
RoHS: Compliant		604
  • 500:$1.7660
  • 100:$2.0360
  • 10:$2.2890
  • 1:$2.6070
IDH02G120C5XKSA1
DISTI # 2564810		Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant		336
  • 1:$3.5100
  • 10:$3.2800
  • 100:$2.9000
  • 500:$2.7400
  • 1000:$2.6000
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TSB572IDT

Mfr.#: TSB572IDT

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VS-HFA08TB120-M3

Mfr.#: VS-HFA08TB120-M3

OMO.#: OMO-VS-HFA08TB120-M3

 Rectifiers 1200V 8A TO-220 HexFred
FFSP05120A

Mfr.#: FFSP05120A

OMO.#: OMO-FFSP05120A

 Schottky Diodes & Rectifiers 1200V SiC SBD 5A
C4D02120A

Mfr.#: C4D02120A

OMO.#: OMO-C4D02120A

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A
3296X-1-501RLF

Mfr.#: 3296X-1-501RLF

OMO.#: OMO-3296X-1-501RLF

 Trimmer Resistors - Through Hole 1/2W 500ohm 10% Square Trimpot
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Mfr.#: LMR33630BRNXT

OMO.#: OMO-LMR33630BRNXT

 Switching Voltage Regulators SIMPLE SWITCHER- 3.8V to 36V, 3A Synchronous Buck Converter With Ultra-Low EMI 12-VQFN-HR -40 to 125
TSB572IDT

Mfr.#: TSB572IDT

OMO.#: OMO-TSB572IDT-STMICROELECTRONICS

 LOW-POWER 2.5 MHZ RR IO 36 V BIC
VS-HFA08TB120-M3

Mfr.#: VS-HFA08TB120-M3

OMO.#: OMO-VS-HFA08TB120-M3-VISHAY

 DIODE FRED 1.2KV 8A TO220AC
LMR33630BRNXT

Mfr.#: LMR33630BRNXT

OMO.#: OMO-LMR33630BRNXT-TEXAS-INSTRUMENTS

 SIMPLE SWITCHER 3.8V to 36V, 3A Synchronous Buck Converter With Ultra-Low EMI
CGD15SG00D2

Mfr.#: CGD15SG00D2

OMO.#: OMO-CGD15SG00D2-WOLFSPEED

 SIC MOSFET ISOLATED GATE DRIVER
उपलब्धता
स्टक:
574
अर्डर मा:
2557
मात्रा प्रविष्ट गर्नुहोस्:
IDH02G120C5XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.७७
US$ २.७७
10
US$ २.३५
US$ २३.५०
100
US$ २.०४
US$ २०४.००
250
US$ १.९३
US$ ४८२.५०
500
US$ १.७३
US$ ८६५.००
1000
US$ १.४६
US$ १ ४६०.००
2500
US$ १.३९
US$ ३ ४७५.००
5000
US$ १.३३
US$ ६ ६५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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