SQJ910AEP-T2_GE3

SQJ910AEP-T2_GE3
Mfr. #:
SQJ910AEP-T2_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8L
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQJ910AEP-T2_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SQJ910AEP-T2_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK SO-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
30 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
7 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
39 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
48 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
72 S
पतन समय:
7 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
3 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
27 ns
सामान्य टर्न-अन ढिलाइ समय:
11 ns
Tags
SQJ910, SQJ91, SQJ9, SQJ
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
छवि भाग # विवरण
SQJ910AEP-T1_GE3

Mfr.#: SQJ910AEP-T1_GE3

OMO.#: OMO-SQJ910AEP-T1-GE3

MOSFET Dual N-Channel 30V AEC-Q101 Qualified
SQJ910AEP-T2_GE3

Mfr.#: SQJ910AEP-T2_GE3

OMO.#: OMO-SQJ910AEP-T2-GE3

MOSFET 30V Vds 20V Vgs PowerPAK SO-8L
SQJ910AEP

Mfr.#: SQJ910AEP

OMO.#: OMO-SQJ910AEP-1190

नयाँ र मौलिक
SQJ910AEPT1GE3

Mfr.#: SQJ910AEPT1GE3

OMO.#: OMO-SQJ910AEPT1GE3-1190

Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
SQJ910AEP-T2_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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