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BSC160N10NS3 G

BSC160N10NS3 G
Mfr. #:
BSC160N10NS3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC160N10NS3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
42 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
13.9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
25 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
60 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
21 S
पतन समय:
5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
15 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
भाग # उपनाम:
BSC160N10NS3GATMA1 BSC16N1NS3GXT SP000482382
एकाइ वजन:
0.003527 oz
Tags
BSC160N10NS3, BSC160N10, BSC160, BSC16, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 42A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		14918In Stock
  • 1000:$0.5375
  • 500:$0.6809
  • 100:$0.8780
  • 10:$1.1110
  • 1:$1.2500
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 42A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		14918In Stock
  • 1000:$0.5375
  • 500:$0.6809
  • 100:$0.8780
  • 10:$1.1110
  • 1:$1.2500
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 42A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$0.4627
BSC160N10NS3G
DISTI # BSC160N10NS3 G		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.5479
  • 10000:$0.5249
  • 20000:$0.5179
  • 30000:$0.4979
  • 50000:$0.4919
BSC160N10NS3GXT
DISTI # BSC160N10NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 8.8A 8-Pin TDSON EP - Tape and Reel (Alt: BSC160N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3639
  • 10000:$0.3509
  • 20000:$0.3379
  • 30000:$0.3269
  • 50000:$0.3209
BSC160N10NS3GATMA1.
DISTI # 23AC2920		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0139ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:60W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3640
  • 10000:$0.3510
  • 20000:$0.3380
  • 30000:$0.3270
  • 50000:$0.3210
BSC160N10NS3GATMA1
DISTI # 47Y7999		Infineon Technologies AGMOSFET Transistor, N Channel, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
  • 1:$1.0400
  • 10:$0.8860
  • 25:$0.8180
  • 50:$0.7490
  • 100:$0.6810
  • 250:$0.6410
  • 500:$0.6010
  • 1000:$0.5210
BSC160N10NS3 G
DISTI # 726-BSC160N10NS3G		Infineon Technologies AGMOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
RoHS: Compliant		78
  • 1:$1.0400
  • 10:$0.8860
  • 100:$0.6810
  • 500:$0.6010
  • 1000:$0.4750
BSC160N10NS3GATMA1
DISTI # 726-BSC160N10NS3GATM		Infineon Technologies AGMOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
RoHS: Compliant		317
  • 1:$1.0400
  • 10:$0.8860
  • 100:$0.6810
  • 500:$0.6010
  • 1000:$0.4750
BSC160N10NS3GATMA1
DISTI # 8259250P		Infineon Technologies AGMOSFET N-CH 8.8A 100V OPTIMOS3 TDSON8EP, RL550
  • 100:£0.4920
BSC160N10NS3GATMA1
DISTI # BSC160N10NS3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,42A,60W,PG-TDSON-8833
  • 1:$0.8280
  • 3:$0.7329
  • 10:$0.6160
  • 100:$0.5406
  • 1000:$0.4857
BSC160N10NS3GInfineon Technologies AG 2726
    BSC160N10NS3GInfineon Technologies AG100V,16m,42A,N-Channel Power MOSFET500
    • 1:$0.7300
    • 100:$0.6100
    • 500:$0.5400
    • 1000:$0.5300
    BSC160N10NS3GATMA1
    DISTI # 2443424    		Infineon Technologies AGMOSFET, N CH, 100V, 42A, TDSON-8
    RoHS: Compliant    		2621
    • 1:$1.6500
    • 10:$1.4100
    • 100:$1.0900
    • 500:$0.9590
    BSC160N10NS3GATMA1
    DISTI # 2443424    		Infineon Technologies AGMOSFET, N CH, 100V, 42A, TDSON-8
    RoHS: Compliant    		2631
    • 5:£0.8760
    • 25:£0.8540
    • 100:£0.6270
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    LMV324AIDR

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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1992
    मात्रा प्रविष्ट गर्नुहोस्:
    BSC160N10NS3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.०३
    US$ १.०३
    10
    US$ ०.८९
    US$ ८.८६
    100
    US$ ०.६८
    US$ ६८.१०
    500
    US$ ०.६०
    US$ ३००.५०
    1000
    US$ ०.४८
    US$ ४७५.००
    बाट सुरु गर्नुहोस्
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