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PSMN7R8-120PSQ

PSMN7R8-120PSQ
Mfr. #:
PSMN7R8-120PSQ
निर्माता:
Nexperia
विवरण:
MOSFET N-channel 120V 7.9mo FET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
PSMN7R8-120PSQ डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
PSMN7R8-120PSQ थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
नेक्सेरिया
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
120 V
आईडी - निरन्तर ड्रेन वर्तमान:
70 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.72 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
167 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
349 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
ट्यूब
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
नेक्सेरिया
पतन समय:
60.8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
55.3 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
151.8 ns
सामान्य टर्न-अन ढिलाइ समय:
45.5 ns
एकाइ वजन:
0.211644 oz
Tags
PSMN7R8-120P, PSMN7R8-12, PSMN7R8, PSMN7, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 70 A, 120 V, 0.0062 Ohm, 10 V, 3 V Rohs Compliant: Yes
***peria
PSMN7R8-120PS MIKEB - N-channel 120V 7.9mΩ standard level MOSFET in TO220
***et
Trans MOSFET N-CH 120V 70A 3-Pin TO-220AB Tube
***i-Key
MOSFET N-CH 120V TO-220AB
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 120V, 70, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:349W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 120V, 70, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:70A; Tensione Drain Source Vds:120V; Resistenza di Attivazione Rds(on):0.0062ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:349W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
भाग # Mfg। विवरण स्टक मूल्य
PSMN7R8-120PSQ
DISTI # V36:1790_06540990		NexperiaPSMN7R8-120PS/SIL3P/RAILH//0
  • 5000000:$0.9319
  • 2500000:$0.9330
  • 500000:$0.9835
  • 50000:$1.0530
  • 5000:$1.0640
PSMN7R8-120PSQ
DISTI # 1727-1816-ND		NexperiaMOSFET N-CH 120V 70A TO-220AB
RoHS: Compliant
Min Qty: 5000
Container: Tube		Temporarily Out of Stock
  • 5000:$1.0640
PSMN7R8-120PSQ
DISTI # PSMN7R8-120PSQ		NexperiaTrans MOSFET N-CH 120V 70A 3-Pin TO-220AB Tube (Alt: PSMN7R8-120PSQ)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 2100
  • 500:€0.9329
  • 300:€0.9999
  • 200:€1.0759
  • 100:€1.1659
  • 50:€1.3999
PSMN7R8-120PSQ
DISTI # PSMN7R8-120PSQ		NexperiaTrans MOSFET N-CH 120V 70A 3-Pin TO-220AB Tube - Rail/Tube (Alt: PSMN7R8-120PSQ)
RoHS: Compliant
Min Qty: 5000
Container: Tube		Americas - 0
  • 50000:$0.9629
  • 25000:$0.9869
  • 15000:$1.0119
  • 10000:$1.0379
  • 5000:$1.0519
PSMN7R8-120PSQ
DISTI # PSMN7R8-120PSQ		NexperiaTrans MOSFET N-CH 120V 70A 3-Pin TO-220AB Tube - Bulk (Alt: PSMN7R8-120PSQ)
RoHS: Compliant
Min Qty: 313
Container: Bulk		Americas - 0
  • 3130:$0.9629
  • 1565:$0.9869
  • 939:$1.0119
  • 626:$1.0379
  • 313:$1.0519
PSMN7R8-120PSQ
DISTI # 90W9539		NexperiaMOSFET Transistor, N Channel, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes1414
  • 5000:$1.1900
  • 2500:$1.2300
  • 1000:$1.3200
  • 500:$1.6000
  • 100:$1.8200
  • 10:$2.2700
  • 1:$2.6800
PSMN7R8-120PSQ
DISTI # 771-PSMN7R8-120PSQ		NexperiaMOSFET N-channel 120V 7.9mo FET
RoHS: Compliant		172
  • 1:$2.6500
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.3100
  • 2000:$1.2200
  • 5000:$1.1800
PSMN7R8-120PSQNXP SemiconductorsNow Nexperia PSMN7R8-120PSQ - Power Field-Effect Transistor, 70A I(D), 120V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Not Compliant		498
  • 1000:$1.0500
  • 500:$1.1100
  • 100:$1.1500
  • 25:$1.2000
  • 1:$1.3000
PSMN7R8-120PSQ
DISTI # 2319894		NexperiaMOSFET, N-CH, 120V, 70, TO-220
RoHS: Compliant		1414
  • 25:$2.1400
  • 10:$2.4000
  • 1:$2.6400
PSMN7R8-120PSQ
DISTI # 2319894		NexperiaMOSFET, N-CH, 120V, 70, TO-220
RoHS: Compliant		1538
  • 500:£1.2000
  • 250:£1.2700
  • 100:£1.3500
  • 25:£1.6900
  • 5:£1.8900
PSMN7R8-120PSQ
DISTI # XSKDRABV0026009		Nexperia 
RoHS: Compliant		900 in Stock0 on Order
  • 900:$1.5000
  • 450:$1.6100
छवि भाग # विवरण
STBR6012WY

Mfr.#: STBR6012WY

OMO.#: OMO-STBR6012WY

 Rectifiers Automotive-grade high-voltage 60-amp bridge rectifier diode
STBR6012WY

Mfr.#: STBR6012WY

OMO.#: OMO-STBR6012WY-STMICROELECTRONICS

 DIODE GEN PURP 1.2KV 60A DO247
उपलब्धता
स्टक:
172
अर्डर मा:
2155
मात्रा प्रविष्ट गर्नुहोस्:
PSMN7R8-120PSQ को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.६५
US$ २.६५
10
US$ २.२५
US$ २२.५०
100
US$ १.८०
US$ १८०.००
500
US$ १.५८
US$ ७९०.००
1000
US$ १.३१
US$ १ ३१०.००
2000
US$ १.२२
US$ २ ४४०.००
5000
US$ १.१८
US$ ५ ९००.००
10000
US$ १.१३
US$ ११ ३००.००
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