STFH24N60M2

Mfr. #:: STFH24N60M2
निर्माता:: STMicroelectronics
विवरण:: MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: STFH24N60M2 डाटा पाना
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थप जानकारी:: STFH24N60M2 थप जानकारी STFH24N60M2 Product Details

उत्पादन विशेषता
विशेषता मान

निर्माता:: STM माइक्रोइलेक्ट्रोनिक्स

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: प्वाल मार्फत

प्याकेज / केस:: TO-220FP-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 600 V

आईडी - निरन्तर ड्रेन वर्तमान:: 18 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 168 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 25 V

Qg - गेट चार्ज:: 29 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 30 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: एमडीमेश

प्याकेजिङ:: ट्यूब

शृङ्खला:: STFH24N60M2

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: STM माइक्रोइलेक्ट्रोनिक्स

पतन समय:: 15 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 9 ns

कारखाना प्याक मात्रा:: 920

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 60 ns

सामान्य टर्न-अन ढिलाइ समय:: 14 ns

एकाइ वजन:: 0.003527 oz

Tags: STFH, STF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STFH24N60M2 विवरण

***icroelectronics: N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

***ure Electronics: N-Channel 600 V 190 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N-CH, 600V, 18A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 30W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh, M2 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.20pF 50volts C0G +/-0.1pF

***ow.cn: Trans MOSFET N-CH 600V 19.3A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 600V, 19.3A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:19.3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R280CEXKSA1

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

*** Electronics: IPW60R190C6 Infineon MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6 Tube RoHS

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,20.2A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:151W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.2A; Power Dissipation Pd:151W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 600V, 15A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R380CEXKSA1

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

***icroelectronics: N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220

***-Wing Technology: STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V

***ure Electronics: Single N-Channel 600 V 0.285 Ohm 35 nC 110 W Flange Mount Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube

***ark: Mosfet, N Ch, 600V, 13A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; On Resistance Rds(On):0.26Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 13A 280m´Î@10V6.5A 25W 4V@250Ã×A N Channel TO-220FP-3WideCreepage MOSFETs ROHS

***nell: MOSFET, N-CH, 600V, 13A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP

*** Source Electronics: MOSFET N-CH 600V 13A TO-220FP / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube

*** Electronics: STF18NM60N STMicroelectronics MOSFET N-Channel 600V 0.27ohm 13A MDmesh TO220FP RoHS

***ure Electronics: N-Channel 600 V 285 mO 35 nC Flange Mount MDmesh II Power Mosfet - TO-220FP

***enic: 600V 13A 30W 285m´Î@10V6.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

STFH24N60M2 थप जानकारी

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
STFH24N60M2 DISTI # V79:2366_22741371	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	249	5000:$1.3146 2500:$1.4680 1000:$1.5119 500:$1.6346 100:$1.8420 10:$2.3339 1:$3.0090
STFH24N60M2 DISTI # V99:2348_17701881	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	245	5000:$1.3146 2500:$1.4680 1000:$1.5119 500:$1.6346 100:$1.8420 10:$2.3339 1:$3.0090
STFH24N60M2 DISTI # V36:1790_16518755	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	0
STFH24N60M2 DISTI # 497-16596-5-ND	STMicroelectronics	MOSFET N-CH 600V 18A TO220FP RoHS: Compliant Min Qty: 1 Container: Tube	144In Stock	5520:$1.3160 2760:$1.3324 920:$1.7272 100:$2.1023 25:$2.4676 10:$2.6160 1:$2.9100
STFH24N60M2 DISTI # 31081665	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	249	5000:$1.4689 2500:$1.5012 1000:$1.5935 500:$1.7572 100:$2.0120 10:$2.5089 6:$3.2347
STFH24N60M2 DISTI # 25954552	STMicroelectronics	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube	245	5000:$1.4689 2500:$1.5012 1000:$1.5935 500:$1.7572 100:$2.0120 10:$2.5089 6:$3.2347
STFH24N60M2 DISTI # STFH24N60M2	STMicroelectronics	Trans MOSFET N-CH 650V 18A 3-Pin TO-220FP Tube - Bulk (Alt: STFH24N60M2) Min Qty: 920 Container: Bulk	Americas - 0	2760:$1.1900 4600:$1.1900 9200:$1.1900 1840:$1.2900 920:$1.3900
STFH24N60M2 DISTI # 92Y9451	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	5000:$1.2300 2500:$1.2800 1000:$1.3700 500:$1.6600 100:$1.9000 10:$2.3700 1:$2.7900
STFH24N60M2 DISTI # 511-STFH24N60M2	STMicroelectronics	MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package RoHS: Compliant	1150	1:$2.7600 10:$2.3500 100:$1.8800 500:$1.6400 1000:$1.3600 2500:$1.2700 5000:$1.2200
STFH24N60M2 DISTI # 1241108P	STMicroelectronics	STMICROELECTRONICSMOSFETSTFH24N60M2, TU	840	50:£0.8740
STFH24N60M2 DISTI # 2602656	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP-3	0	500:£1.2700 250:£1.3600 100:£1.4500 10:£1.8300 1:£2.4200
STFH24N60M2 DISTI # 2602656	STMicroelectronics	MOSFET, N-CH, 600V, 18A, TO-220FP-3 RoHS: Compliant	0	2760:$2.1400 1840:$2.3000 920:$2.5000 100:$3.5600 10:$4.4300 1:$4.9000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: LM6172IMX/NOPB OMO.#: OMO-LM6172IMX-NOPB	High Speed Operational Amplifiers DUAL HI-SPD LO-PWR LO-DIST VOL FDBK AMP
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	Mfr.#: IR2304SPBF OMO.#: OMO-IR2304SPBF	Gate Drivers HALF BRDG DRVR 600V 60mA 220ns
	Mfr.#: FGY75N60SMD OMO.#: OMO-FGY75N60SMD	IGBT Transistors 600V, 75A Field Stop IGBT
	Mfr.#: STFU24N60M2 OMO.#: OMO-STFU24N60M2	MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
	Mfr.#: IRFR5305TRPBF OMO.#: OMO-IRFR5305TRPBF	MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC
	Mfr.#: FQP55N10 OMO.#: OMO-FQP55N10	MOSFET 100V N-Channel QFET
	Mfr.#: UC3844BVD1G OMO.#: OMO-UC3844BVD1G	Switching Controllers 52kHz 1A Current PWM w/48% Duty Cycle Max
	Mfr.#: WRG32F2FBBNN OMO.#: OMO-WRG32F2FBBNN	Rocker Switches DPST BLK 16A ON-OFF
	Mfr.#: LM35DT/NOPB OMO.#: OMO-LM35DT-NOPB	Board Mount Temperature Sensors PREC CENTIGRADE TEMP SENSOR

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

STFH24N60M2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.७६~~; ~~US$ २.७६~~

10: ~~US$ २.३५~~; ~~US$ २३.५०~~

100: ~~US$ १.८८~~; ~~US$ १८८.००~~

500: ~~US$ १.६४~~; ~~US$ ८२०.००~~

1000: ~~US$ १.३६~~; ~~US$ १ ३६०.००~~

2500: ~~US$ १.२७~~; ~~US$ ३ १७५.००~~

5000: ~~US$ १.२२~~; ~~US$ ६ १००.००~~

10000: ~~US$ १.१७~~; ~~US$ ११ ७००.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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STFH24N60M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes