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IPD15N06S2L64ATMA2

IPD15N06S2L64ATMA2
Mfr. #:
IPD15N06S2L64ATMA2
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CHANNEL_55/60V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPD15N06S2L64ATMA2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD15N06S2L64ATMA2 DatasheetIPD15N06S2L64ATMA2 Datasheet (P4-P6)IPD15N06S2L64ATMA2 Datasheet (P7-P8)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
55 V
आईडी - निरन्तर ड्रेन वर्तमान:
19 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
47 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
13 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
47 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
2.3 mm
लम्बाइ:
6.5 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
6.22 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
12 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
14 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
21 ns
सामान्य टर्न-अन ढिलाइ समय:
4 ns
भाग # उपनाम:
IPD15N06S2L-64 SP001063644
एकाइ वजन:
0.139332 oz
Tags
IPD15N06S2L64A, IPD15N06S2L6, IPD15N06S, IPD15N06, IPD15, IPD1, IPD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; On Resistance Rds(On):0.047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
भाग # Mfg। विवरण स्टक मूल्य
IPD15N06S2L64ATMA2
DISTI # V72:2272_06391057		Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R72
  • 25:$0.5023
  • 10:$0.6139
  • 1:$0.7377
IPD15N06S2L64ATMA2
DISTI # V36:1790_06391057		Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R0
  • 2500:$0.2599
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2CT-ND		Infineon Technologies AGN-CHANNEL_55/60V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3245In Stock
  • 1000:$0.3148
  • 500:$0.3935
  • 100:$0.4977
  • 10:$0.6490
  • 1:$0.7400
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2DKR-ND		Infineon Technologies AGN-CHANNEL_55/60V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3245In Stock
  • 1000:$0.3148
  • 500:$0.3935
  • 100:$0.4977
  • 10:$0.6490
  • 1:$0.7400
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2TR-ND		Infineon Technologies AGN-CHANNEL_55/60V
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.2419
  • 12500:$0.2483
  • 5000:$0.2578
  • 2500:$0.2769
IPD15N06S2L64ATMA2
DISTI # 33919527		Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.4594
IPD15N06S2L64ATMA2
DISTI # 26195738		Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R72
  • 28:$0.7377
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2		Infineon Technologies AGN-KANAL POWER MOS - Bulk (Alt: IPD15N06S2L64ATMA2)
RoHS: Compliant
Min Qty: 1471
Container: Bulk		Americas - 0
  • 14710:$0.2159
  • 7355:$0.2189
  • 4413:$0.2269
  • 2942:$0.2359
  • 1471:$0.2439
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2		Infineon Technologies AGN-KANAL POWER MOS - Tape and Reel (Alt: IPD15N06S2L64ATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2829
  • 15000:$0.2879
  • 10000:$0.2979
  • 5000:$0.3089
  • 2500:$0.3209
IPD15N06S2L64ATMA2
DISTI # SP001063644		Infineon Technologies AGN-KANAL POWER MOS (Alt: SP001063644)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.2699
  • 15000:€0.2909
  • 10000:€0.3159
  • 5000:€0.3439
  • 2500:€0.4209
IPD15N06S2L64ATMA2
DISTI # 12AC9707		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes15
  • 1000:$0.2950
  • 500:$0.3190
  • 250:$0.3430
  • 100:$0.3680
  • 50:$0.4350
  • 25:$0.5020
  • 10:$0.5700
  • 1:$0.6870
IPD15N06S2L64ATMA2.
DISTI # 27AC6730		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:47W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 25000:$0.2310
  • 15000:$0.2350
  • 10000:$0.2430
  • 5000:$0.2520
  • 1:$0.2620
IPD15N06S2L64ATMA2
DISTI # 726-IPD15N06S2L64AT		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
RoHS: Compliant		7129
  • 1:$0.6800
  • 10:$0.5640
  • 100:$0.3640
  • 1000:$0.2920
  • 2500:$0.2460
IPD15N06S2L64ATMA2Infineon Technologies AGN-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252
RoHS: Not Compliant		2500Reel
  • 2500:$0.2800
IPD15N06S2L64ATMA2Infineon Technologies AGPower Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		39828
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
IPD15N06S2L64ATMA2
DISTI # 2709988		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-2522515
  • 500:£0.2180
  • 250:£0.2480
  • 100:£0.2780
  • 10:£0.4770
  • 1:£0.5940
IPD15N06S2L64ATMA2
DISTI # XSFP00000116981		Infineon Technologies AGN-Channel 55 V 64 mOhm 13 nC OptiMOSEnhancementMode Power-Transistor-TO-252
RoHS: Compliant		5000 in Stock0 on Order
  • 5000:$0.3733
  • 2500:$0.4000
IPD15N06S2L64ATMA2
DISTI # 2709988		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252
RoHS: Compliant		2510
  • 1000:$0.4750
  • 500:$0.5930
  • 100:$0.7500
  • 10:$0.9780
  • 1:$1.1200
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उपलब्धता
स्टक:
Available
अर्डर मा:
1986
मात्रा प्रविष्ट गर्नुहोस्:
IPD15N06S2L64ATMA2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.६८
US$ ०.६८
10
US$ ०.५६
US$ ५.६४
100
US$ ०.३६
US$ ३६.४०
1000
US$ ०.२९
US$ २९२.००
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