STGW60H65DRF

STGW60H65DRF
Mfr. #:
STGW60H65DRF
निर्माता:
STMicroelectronics
विवरण:
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STGW60H65DRF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STGW60H65DRF थप जानकारी STGW60H65DRF Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247
माउन्टिङ शैली:
SMD/SMT
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
650 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.9 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
120 A
Pd - शक्ति अपव्यय:
360 W
शृङ्खला:
STGW60H65DRF
प्याकेजिङ:
ट्यूब
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
गेट-एमिटर चुहावट वर्तमान:
250 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
600
उपश्रेणी:
IGBTs
एकाइ वजन:
0.229281 oz
Tags
STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***o
    A***o
    RU

    Got it fast. Took for hours on gris. I will add a review after the tests in the assembled product.

    2019-06-08
    M***k
    M***k
    TR

    very goodthanks

    2019-05-18
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IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
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***rchild Semiconductor
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***ark
Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW75N65H5XKSA1
***ineon
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Igbt, 650V, 90A, 175Deg C, 395W; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:395W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IKW75N65EH5XKSA1
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
STGW60H65 Field Stop Trench Gate IGBTs
STMicroelectronics STGW60H65 Field Stop Trench Gate IGBTs are the first IGBTs feature an advanced proprietary trench gate and field stop structure. An optimized compromise between conduction and switching losses results in maximum efficiency. A very tight parameter distribution and VCE(sat) temperature coefficient slight positive makes it easier to parallel devices. The STGW60H65 comes in three different versions, one without an anti-parallel diode, one with a fast soft recovery, and one with an ultrafast soft recovery.Learn More
भाग # Mfg। विवरण स्टक मूल्य
STGW60H65DRF
DISTI # V36:1790_06560782
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW60H65DRF
    DISTI # 497-13166-ND
    STMicroelectronicsIGBT 650V 120A 420W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    319In Stock
    • 510:$6.1194
    • 120:$7.0274
    • 30:$8.0933
    • 10:$8.4880
    • 1:$9.4000
    STGW60H65DRF
    DISTI # STGW60H65DRF
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW60H65DRF)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€2.2900
    • 500:€2.4900
    • 100:€2.5900
    • 50:€2.6900
    • 25:€2.7900
    • 10:€2.8900
    • 1:€3.1900
    STGW60H65DRF
    DISTI # STGW60H65DRF
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW60H65DRF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 6000:$4.7900
    • 3600:$4.8900
    • 2400:$5.0900
    • 1200:$5.2900
    • 600:$5.5900
    STGW60H65DRF
    DISTI # 43W6511
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$4.8900
    • 250:$5.0400
    • 100:$6.0200
    • 50:$6.4700
    • 25:$6.9200
    • 10:$7.6000
    • 1:$8.4600
    STGW60H65DRF
    DISTI # 511-STGW60H65DRF
    STMicroelectronicsIGBT Transistors 60A 650V Field Stop Trench Gate IBGT
    RoHS: Compliant
    758
    • 1:$8.9400
    • 10:$8.0800
    • 25:$7.7000
    • 100:$6.6900
    • 250:$6.3900
    • 500:$5.8200
    • 1000:$5.0700
    STGW60H65DRFSTMicroelectronics 239
      STGW60H65DRF
      DISTI # IGBT1341
      STMicroelectronicsIGBT650V120A1.9VTO247-3Stock DE - 0Stock HK - 0Stock US - 0
      • 600:$3.0000
      STGW60H65DRF
      DISTI # STGW60H65DRF
      STMicroelectronics650V 120A 420W TO247
      RoHS: Not Compliant
      20
      • 5:€3.2000
      • 30:€2.8000
      • 120:€2.6000
      • 300:€2.5000
      STGW60H65DRFSTMicroelectronics60 A, 650 V field stop trench gate IGBT with Ultrafast diode193
      • 1:$2.7300
      • 100:$2.4900
      • 500:$2.1900
      • 1000:$2.1900
      छवि भाग # विवरण
      FOD3120SD

      Mfr.#: FOD3120SD

      OMO.#: OMO-FOD3120SD

      Logic Output Optocouplers Optocoupl Logic-Out Push-Pul DC-In 1-Ch
      FOD3120SD

      Mfr.#: FOD3120SD

      OMO.#: OMO-FOD3120SD-ON-SEMICONDUCTOR

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      उपलब्धता
      स्टक:
      758
      अर्डर मा:
      2741
      मात्रा प्रविष्ट गर्नुहोस्:
      STGW60H65DRF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ८.९४
      US$ ८.९४
      10
      US$ ८.०८
      US$ ८०.८०
      25
      US$ ७.७०
      US$ १९२.५०
      100
      US$ ६.६९
      US$ ६६९.००
      250
      US$ ६.३९
      US$ १ ५९७.५०
      500
      US$ ५.८२
      US$ २ ९१०.००
      1000
      US$ ५.०७
      US$ ५ ०७०.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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