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MSC010SDA070K

MSC010SDA070K
Mfr. #:
MSC010SDA070K
निर्माता:
Microchip / Microsemi
विवरण:
Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MSC010SDA070K डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MSC010SDA070K थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
Schottky डायोड्स र Rectifiers
RoHS:
Y
उत्पादन:
Schottky सिलिकन कार्बाइड डायोड
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-2
यदि - फर्वार्ड वर्तमान:
10 A
Vrrm - दोहोरिने उल्टो भोल्टेज:
700 V
Vf - फर्वार्ड भोल्टेज:
1.5 V
कन्फिगरेसन:
एकल
प्रविधि:
SiC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
MSC0
प्याकेजिङ:
ट्यूब
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
उत्पादन प्रकार:
Schottky डायोड्स र Rectifiers
कारखाना प्याक मात्रा:
1
उपश्रेणी:
डायोड र रेक्टिफायरहरू
Vr - उल्टो भोल्टेज:
700 V
Tags
MSC010S, MSC010, MSC01, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
DIODE SCHOTTKY 700V 10A TO220-3
***hardson RFPD
SILICON CARBIDE DIODE
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
छवि भाग # विवरण
MSC010SDA120K

Mfr.#: MSC010SDA120K

OMO.#: OMO-MSC010SDA120K

 Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
MSC010SDA120B

Mfr.#: MSC010SDA120B

OMO.#: OMO-MSC010SDA120B

 Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
MSC010SDA070K

Mfr.#: MSC010SDA070K

OMO.#: OMO-MSC010SDA070K

 Schottky Diodes & Rectifiers 700 V, 10 A SiC SBD
MSC010-A0-0004

Mfr.#: MSC010-A0-0004

OMO.#: OMO-MSC010-A0-0004-1190

 नयाँ र मौलिक
MSC010A04074

Mfr.#: MSC010A04074

OMO.#: OMO-MSC010A04074-1190

 नयाँ र मौलिक
MSC010SDA120B

Mfr.#: MSC010SDA120B

OMO.#: OMO-MSC010SDA120B-MICROSEMI

 SILICON CARBIDE DIODE
उपलब्धता
स्टक:
185
अर्डर मा:
2168
मात्रा प्रविष्ट गर्नुहोस्:
MSC010SDA070K को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.३५
US$ ५.३५
5
US$ ५.०७
US$ २५.३५
10
US$ ४.८८
US$ ४८.८०
25
US$ ४.६९
US$ ११७.२५
50
US$ ४.५२
US$ २२६.००
100
US$ ४.१५
US$ ४१५.००
250
US$ ४.००
US$ १ ०००.००
500
US$ ३.८६
US$ १ ९३०.००
1000
US$ ३.५४
US$ ३ ५४०.००
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