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SIDR402DP-T1-GE3

SIDR402DP-T1-GE3
Mfr. #:
SIDR402DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIDR402DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR402DP-T1-GE3 DatasheetSIDR402DP-T1-GE3 Datasheet (P4-P6)SIDR402DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIDR402DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8DC-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.16 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, - 16 V
Qg - गेट चार्ज:
53 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SID
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
147 S
पतन समय:
40 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
100 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
56 ns
सामान्य टर्न-अन ढिलाइ समय:
45 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 64.6 A 6.25 W Surface Mount Mosfet - POWERPAK-SO-8DC
***roFlash
TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R
***ark
Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Powerrohs Compliant: Yes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
भाग # Mfg। विवरण स्टक मूल्य
SIDR402DP-T1-GE3
DISTI # V36:1790_21749947		Vishay IntertechnologiesN-Channel 40 V (D-S) MOSFET0
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.1529
    • 3000:$1.1673
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.0529
    • 500:€1.0809
    • 100:€1.0959
    • 50:€1.1129
    • 25:€1.2539
    • 10:€1.5199
    • 1:€2.1699
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.0549
    • 30000:$1.0839
    • 18000:$1.1149
    • 12000:$1.1629
    • 6000:$1.1979
    SIDR402DP-T1-GE3
    DISTI # 59AC7336    		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
    • 10000:$1.0300
    • 6000:$1.0700
    • 4000:$1.1200
    • 2000:$1.2400
    • 1000:$1.3100
    • 1:$1.3900
    SIDR402DP-T1-GE3
    DISTI # 78AC6501    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,PowerRoHS Compliant: Yes0
    • 500:$1.4500
    • 250:$1.5600
    • 100:$1.6600
    • 50:$1.8200
    • 25:$1.9800
    • 10:$2.1400
    • 1:$2.5800
    SIDR402DP-T1-GE3
    DISTI # 78-SIDR402DP-T1-GE3    		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1200
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 3000:$1.1100
    • 6000:$1.0700
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W0
    • 500:£1.0600
    • 250:£1.1400
    • 100:£1.2100
    • 10:£1.5700
    • 1:£2.1200
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$1.8900
    • 500:$2.0000
    • 250:$2.1300
    • 100:$2.3100
    • 10:$2.6600
    • 1:$3.0500
    छवि भाग # विवरण
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    SIDR402DP

    Mfr.#: SIDR402DP

    OMO.#: OMO-SIDR402DP-1190

    		 नयाँ र मौलिक
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 40V PPSO-8DC
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIDR402DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.५५
    US$ २.५५
    10
    US$ २.१२
    US$ २१.२०
    100
    US$ १.६४
    US$ १६४.००
    500
    US$ १.४४
    US$ ७२०.००
    1000
    US$ १.१९
    US$ १ १९०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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