QPD1025L

QPD1025L
Mfr. #:
QPD1025L
निर्माता:
Qorvo
विवरण:
RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
QPD1025L डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
QPD1025L थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
कोर्भो
उत्पादन कोटि:
आरएफ JFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर प्रकार:
HEMT
प्रविधि:
GaN SiC
पाउनु:
22.9 dB
आईडी - निरन्तर ड्रेन वर्तमान:
28 A
आउटपुट पावर:
1.5 kW
अधिकतम ड्रेन गेट भोल्टेज:
225 V
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 85 C
Pd - शक्ति अपव्यय:
758 W
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
NI-1230-4
प्याकेजिङ:
ट्रे
आवेदन:
एभियोनिक्स, IFF ट्रान्सपोन्डर
कन्फिगरेसन:
डुअल गेट डुअल ड्रेन
सञ्चालन आवृत्ति:
1 GHz to 1.1 GHz
शृङ्खला:
QPD
ब्रान्ड:
कोर्भो
विकास किट:
QPD1025LEVB1
नमी संवेदनशील:
हो
उत्पादन प्रकार:
आरएफ JFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
18
उपश्रेणी:
ट्रान्जिस्टरहरू
Tags
QPD102, QPD10, QPD1, QPD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Transistor, .96 to 1.215 GHz, 1800 W, 65 V, 22.5 dB gain, NI-1230 Eared Pkg
QPD1025 & QPD1025L RF Input-Matched Transistors
Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. These transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. The QPD1025 and QPD1025L transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.
भाग # Mfg। विवरण स्टक मूल्य
QPD1025L
DISTI # 772-QPD1025L
QorvoRF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
RoHS: Compliant
17
  • 1:$803.0000
QPD1025LEVB1
DISTI # 772-QPD1025LEVB1
QorvoRF Development Tools 1-1.1GHz 1500 Watt Eval Board
RoHS: Compliant
2
  • 1:$1,250.0000
छवि भाग # विवरण
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Mfr.#: QPD1014SR

OMO.#: OMO-QPD1014SR

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QPD1013SR

Mfr.#: QPD1013SR

OMO.#: OMO-QPD1013SR

RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1009

Mfr.#: QPD1009

OMO.#: OMO-QPD1009

RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
QPD1004SR

Mfr.#: QPD1004SR

OMO.#: OMO-QPD1004SR

RF JFET Transistors .03-1.2GHz 25W 50V GaN
QPD1022SR

Mfr.#: QPD1022SR

OMO.#: OMO-QPD1022SR

RF JFET Transistors DC-12GHz 10W 32V GaN
QPD1020SR

Mfr.#: QPD1020SR

OMO.#: OMO-QPD1020SR

RF MOSFET Transistors 2.7-3.5GHz 30W Gain 18.4dB
QPD1003

Mfr.#: QPD1003

OMO.#: OMO-QPD1003-RFMD

RF TRANSISTOR
QPD1015L

Mfr.#: QPD1015L

OMO.#: OMO-QPD1015L-1152

RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
QPD1223

Mfr.#: QPD1223

OMO.#: OMO-QPD1223-ON-SEMICONDUCTOR

EMITTER-PHOTOSENSOR PAIR 5MM
उपलब्धता
स्टक:
34
अर्डर मा:
2017
मात्रा प्रविष्ट गर्नुहोस्:
QPD1025L को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ८०३.००
US$ ८०३.००
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