IRG7PH35UDPBF

IRG7PH35UDPBF
Mfr. #:
IRG7PH35UDPBF
निर्माता:
Infineon Technologies
विवरण:
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRG7PH35UDPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG7PH35UDPBF DatasheetIRG7PH35UDPBF Datasheet (P4-P6)IRG7PH35UDPBF Datasheet (P7-P9)IRG7PH35UDPBF Datasheet (P10-P11)
ECAD Model:
थप जानकारी:
IRG7PH35UDPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
1.2 kV
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.9 V
अधिकतम गेट एमिटर भोल्टेज:
30 V
25 C मा निरन्तर कलेक्टर वर्तमान:
50 A
Pd - शक्ति अपव्यय:
180 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
50 A
ब्रान्ड:
Infineon टेक्नोलोजीहरू
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
400
उपश्रेणी:
IGBTs
भाग # उपनाम:
SP001537540
एकाइ वजन:
1.340411 oz
Tags
IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRG7PH35UDPBF
DISTI # 30155874
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
238
  • 100:$5.4240
  • 25:$6.2400
  • 10:$6.5472
  • 3:$7.2384
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF-ND
Infineon Technologies AGIGBT 1200V 50A 180W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
340In Stock
  • 1000:$4.4931
  • 500:$5.1587
  • 100:$5.9242
  • 25:$6.8228
  • 1:$7.9200
IRG7PH35UDPBF
DISTI # C1S322000499276
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
238
  • 200:$4.8900
  • 100:$5.9100
  • 50:$6.3900
  • 25:$6.9600
  • 10:$7.1200
  • 1:$10.4000
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC (Alt: IRG7PH35UDPBF)
RoHS: Compliant
Min Qty: 400
Asia - 400
  • 400:$4.6428
  • 800:$4.4520
  • 1200:$4.3919
  • 2000:$4.2207
  • 4000:$4.1666
  • 10000:$4.0625
  • 20000:$3.9634
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG7PH35UDPBF)
RoHS: Compliant
Min Qty: 100
Container: Tube
Americas - 0
  • 100:$4.4900
  • 150:$4.3900
  • 250:$4.1900
  • 500:$4.0900
  • 1000:$3.9900
IRG7PH35UDPBF
DISTI # 942-IRG7PH35UDPBF
Infineon Technologies AGIGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
RoHS: Compliant
127
  • 1:$7.5400
  • 10:$6.8200
  • 25:$6.5000
  • 100:$5.6500
IRG7PH35UDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant
25
  • 1000:$3.7900
  • 500:$3.9900
  • 100:$4.1500
  • 25:$4.3300
  • 1:$4.6600
IRG7PH35UDPBFInternational RectifierInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant
19
  • 1000:$3.7900
  • 500:$3.9900
  • 100:$4.1500
  • 25:$4.3300
  • 1:$4.6600
IRG7PH35UDPBFInternational Rectifier 
RoHS: Compliant
Europe - 995
    IRG7PH35UDPBF
    DISTI # 1857366
    Infineon Technologies AGIGBT,N CH,DIODE,1200V,50A,TO-247AC
    RoHS: Compliant
    0
    • 1:$11.9300
    • 10:$10.8000
    • 25:$10.3000
    • 100:$8.9400
    छवि भाग # विवरण
    2SA1213-Y-TP

    Mfr.#: 2SA1213-Y-TP

    OMO.#: OMO-2SA1213-Y-TP

    Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate
    2SA1213-Y-TP

    Mfr.#: 2SA1213-Y-TP

    OMO.#: OMO-2SA1213-Y-TP-MICRO-COMMERCIAL-COMPONENTS

    Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate
    उपलब्धता
    स्टक:
    127
    अर्डर मा:
    2110
    मात्रा प्रविष्ट गर्नुहोस्:
    IRG7PH35UDPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ७.५४
    US$ ७.५४
    10
    US$ ६.८१
    US$ ६८.१०
    25
    US$ ६.४९
    US$ १६२.२५
    100
    US$ ५.६४
    US$ ५६४.००
    250
    US$ ५.३८
    US$ १ ३४५.००
    500
    US$ ४.९१
    US$ २ ४५५.००
    1000
    US$ ४.२८
    US$ ४ २८०.००
    2500
    US$ ४.१२
    US$ १० ३००.००
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
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