CSD13306WT

CSD13306WT
Mfr. #:
CSD13306WT
विवरण:
MOSFET 12V N-Channel NexFET Power MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
CSD13306WT डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
CSD13306WT थप जानकारी CSD13306WT Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
टेक्सास उपकरण
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
DSBGA-6
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
12 V
आईडी - निरन्तर ड्रेन वर्तमान:
3.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
10.2 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
700 mV
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
8.6 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
1.9 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
NexFET
प्याकेजिङ:
रील
उचाइ:
0.62 mm
लम्बाइ:
1.5 mm
शृङ्खला:
CSD13306W
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
1 mm
ब्रान्ड:
टेक्सास उपकरण
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
15 S
पतन समय:
8 ns
नमी संवेदनशील:
हो
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
11 ns
कारखाना प्याक मात्रा:
250
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
20 ns
सामान्य टर्न-अन ढिलाइ समय:
7 ns
एकाइ वजन:
0.000060 oz
Tags
CSD1330, CSD133, CSD13, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
12V, N ch NexFET MOSFET™, single WLP 1.0x1.5, 10.2mOhm 6-DSBGA -55 to 150
***et
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
***i-Key
MOSFET N-CH 12V 6DSBGA
***AS
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
भाग # विवरण स्टक मूल्य
CSD13306WT
DISTI # 296-41134-1-ND
MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-6-ND
MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-2-ND
MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
1750In Stock
  • 1250:$0.2312
  • 750:$0.2584
  • 500:$0.2992
  • 250:$0.3536
CSD13306WT
DISTI # CSD13306WT
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R (Alt: CSD13306WT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel
Asia - 0
    CSD13306WT
    DISTI # CSD13306WT
    Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD13306WT)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 2000:$0.1969
    • 2500:$0.1869
    • 4500:$0.1809
    • 10000:$0.1749
    • 20000:$0.1699
    CSD13306WTCSD13306W 12 V N-Channel NexFET&#153,Power MOSFET500
    • 1000:$0.1600
    • 750:$0.1700
    • 500:$0.2200
    • 250:$0.2700
    • 100:$0.2900
    • 25:$0.3400
    • 10:$0.3600
    • 1:$0.4100
    CSD13306W
    DISTI # 595-CSD13306W
    MOSFET CSD13306W 12 V N-Channel NexFET Power MOSFET 6-DSBGA
    RoHS: Compliant
    3100
    • 1:$0.5200
    • 10:$0.4300
    • 100:$0.2620
    • 1000:$0.2030
    • 3000:$0.1730
    • 9000:$0.1610
    • 24000:$0.1530
    • 45000:$0.1490
    CSD13306WT
    DISTI # 595-CSD13306WT
    MOSFET 12V N-Channel NexFET Power MOSFET
    RoHS: Compliant
    0
    • 1:$0.5900
    • 10:$0.4900
    • 100:$0.3000
    • 250:$0.3000
    • 1000:$0.2320
    • 2500:$0.1980
    • 10000:$0.1840
    • 25000:$0.1750
    CSD13306WTSmall Signal Field-Effect Transistor
    RoHS: Compliant
    250
    • 1000:$0.1800
    • 500:$0.1900
    • 100:$0.2000
    • 25:$0.2100
    • 1:$0.2300
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    SN74LVC1G10DSFR

    Mfr.#: SN74LVC1G10DSFR

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    OMO.#: OMO-TPS62085RLTR

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    Mfr.#: TLV70718PDQNR

    OMO.#: OMO-TLV70718PDQNR

    LDO Voltage Regulators 200mA,Lo-IQ,Lo-Noise LDO Reg
    SN74LVC2G74YZPR

    Mfr.#: SN74LVC2G74YZPR

    OMO.#: OMO-SN74LVC2G74YZPR-TEXAS-INSTRUMENTS

    Flip Flops Single Pos Edge Trig
    SN74LVC1G10DSFR

    Mfr.#: SN74LVC1G10DSFR

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    Logic Gates Sgl 3-Inp Pos-NAND Gate
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1985
    मात्रा प्रविष्ट गर्नुहोस्:
    CSD13306WT को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.५९
    US$ ०.५९
    10
    US$ ०.४९
    US$ ४.९०
    100
    US$ ०.३०
    US$ ३०.००
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