IDH16G120C5XKSA1

IDH16G120C5XKSA1
Mfr. #:
IDH16G120C5XKSA1
निर्माता:
Infineon Technologies
विवरण:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IDH16G120C5XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IDH16G120C5XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
Schottky डायोड्स र Rectifiers
RoHS:
Y
उत्पादन:
Schottky सिलिकन कार्बाइड डायोड
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-2
यदि - फर्वार्ड वर्तमान:
16 A
Vrrm - दोहोरिने उल्टो भोल्टेज:
1.2 kV
Vf - फर्वार्ड भोल्टेज:
1.65 V
Ifsm - फर्वार्ड सर्ज वर्तमान:
140 A
कन्फिगरेसन:
एकल
प्रविधि:
SiC
Ir - उल्टो वर्तमान:
5.5 uA
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
ब्रान्ड:
Infineon टेक्नोलोजीहरू
Pd - शक्ति अपव्यय:
250 W
उत्पादन प्रकार:
Schottky डायोड्स र Rectifiers
कारखाना प्याक मात्रा:
500
उपश्रेणी:
डायोड र रेक्टिफायरहरू
व्यापार नाम:
CoolSiC
Vr - उल्टो भोल्टेज:
1.2 kV
भाग # उपनाम:
IDH16G120C5 SP001222696
एकाइ वजन:
0.211644 oz
Tags
IDH16G, IDH16, IDH1, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDH16G120C5 Series 1200 V 40 A 5th Generation ThinQ!™SiC Schottky Diode-TO-220-2
***ical
Diode Schottky 1.2KV 40A 2-Pin(2+Tab) TO-220 Tube
***ark
Sic Schottky Diode, 1.2Kv, 40A, To-220; Product Range:thinq 5G 1200V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:40A; Total Capacitive Charge Qc:57Nc; Diode Case Rohs Compliant: Yes
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
भाग # Mfg। विवरण स्टक मूल्य
IDH16G120C5XKSA1
DISTI # V99:2348_09156849
Infineon Technologies AGDiode Schottky 1.2KV 40A 2-Pin(2+Tab) TO-220 Tube480
  • 500:$7.8120
  • 100:$8.6880
  • 10:$10.0090
  • 1:$10.7420
IDH16G120C5XKSA1
DISTI # IDH16G120C5XKSA1-ND
Infineon Technologies AGDIODE SCHOTTKY 1200V 16A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube
416In Stock
  • 500:$8.5717
  • 100:$9.6357
  • 10:$11.4090
  • 1:$12.4100
IDH16G120C5XKSA1
DISTI # 26198009
Infineon Technologies AGDiode Schottky 1.2KV 40A 2-Pin(2+Tab) TO-220 Tube480
  • 100:$8.6880
  • 10:$10.0090
  • 1:$10.7420
IDH16G120C5XKSA1
DISTI # IDH16G120C5XKSA1
Infineon Technologies AGDiode Schottky Diode 1200V 40A 2-Pin TO-220 Tube - Rail/Tube (Alt: IDH16G120C5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$8.0900
  • 1000:$7.7900
  • 2000:$7.4900
  • 3000:$7.1900
  • 5000:$7.0900
IDH16G120C5XKSA1
DISTI # 34AC1580
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 40A, TO-220,Product Range:thinQ 5G 1200V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:40A,Total Capacitive Charge Qc:57nC,Diode Case , RoHS Compliant: Yes442
  • 1:$11.8200
  • 10:$10.8700
  • 25:$10.4200
  • 50:$9.8000
  • 100:$9.1800
  • 250:$8.7300
  • 500:$8.1700
IDH16G120C5XKSA1
DISTI # 726-IDH16G120C5XKSA1
Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant
531
  • 1:$11.8200
  • 10:$10.8700
  • 25:$10.4200
  • 100:$9.1800
  • 250:$8.7300
  • 500:$8.1700
  • 1000:$7.4900
IDH16G120C5XKSA1Infineon Technologies AG 
RoHS: Not Compliant
481
  • 1000:$8.6200
  • 500:$9.0700
  • 100:$9.4400
  • 25:$9.8500
  • 1:$10.6100
IDH16G120C5XKSA1
DISTI # 1338557
Infineon Technologies AGSIC SCHOTTKY DIODE 1200V 16A TO-220-2, TU427
  • 500:£7.3710
  • 1500:£7.0680
IDH16G120C5XKSA1
DISTI # 2780804
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 40A, TO-220
RoHS: Compliant
457
  • 1:£9.1600
  • 5:£8.5000
  • 10:£7.8900
  • 50:£7.4200
  • 100:£6.9400
IDH16G120C5XKSA1
DISTI # C1S322000579174
Infineon Technologies AGRectifier Diodes
RoHS: Compliant
480
  • 100:$8.6880
  • 10:$10.0090
  • 1:$10.7420
IDH16G120C5XKSA1
DISTI # 2780804
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 40A, TO-220
RoHS: Compliant
442
  • 1:$17.3800
  • 5:$16.2500
  • 10:$14.3700
  • 50:$13.5900
  • 100:$12.8900
  • 250:$12.2500
छवि भाग # विवरण
C2M0280120D

Mfr.#: C2M0280120D

OMO.#: OMO-C2M0280120D

MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
BSS138

Mfr.#: BSS138

OMO.#: OMO-BSS138

MOSFET SOT-23 N-CH LOGIC
C3M0065090D

Mfr.#: C3M0065090D

OMO.#: OMO-C3M0065090D

MOSFET G3 SiC MOSFET 900V, 65mOhm
RC0603FR-07470KL

Mfr.#: RC0603FR-07470KL

OMO.#: OMO-RC0603FR-07470KL

Thick Film Resistors - SMD 470K OHM 1%
LI12-1A85

Mfr.#: LI12-1A85

OMO.#: OMO-LI12-1A85-STANDEX-MEDER-ELECTRONICS

Reed Relays 1 Form A 12 V High Frequency PCB
SWI18-5-N-P5

Mfr.#: SWI18-5-N-P5

OMO.#: OMO-SWI18-5-N-P5-CUI

AC/DC WALL MOUNT ADAPTER 5V 18W
C2M0280120D

Mfr.#: C2M0280120D

OMO.#: OMO-C2M0280120D-WOLFSPEED

MOSFET N-CH 1200V 10A TO-247-3
B72220P3511K101

Mfr.#: B72220P3511K101

OMO.#: OMO-B72220P3511K101-EPCOS

Varistors 20mm / 510v S20K510E3K1
BSS138

Mfr.#: BSS138

OMO.#: OMO-BSS138-ON-SEMICONDUCTOR

MOSFET N-CH 50V 220MA SOT-23
C3M0065090D

Mfr.#: C3M0065090D

OMO.#: OMO-C3M0065090D-WOLFSPEED

MOSFET N-CH 900V 36A TO247-3
उपलब्धता
स्टक:
515
अर्डर मा:
2498
मात्रा प्रविष्ट गर्नुहोस्:
IDH16G120C5XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ८.९४
US$ ८.९४
10
US$ ८.०८
US$ ८०.८०
25
US$ ७.७०
US$ १९२.५०
100
US$ ६.६९
US$ ६६९.००
250
US$ ६.३९
US$ १ ५९७.५०
500
US$ ५.८२
US$ २ ९१०.००
1000
US$ ५.०७
US$ ५ ०७०.००
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