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S29GL01GS11FAIV20

S29GL01GS11FAIV20
Mfr. #:
S29GL01GS11FAIV20
निर्माता:
Cypress Semiconductor
विवरण:
NOR Flash Nor
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
S29GL01GS11FAIV20 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
S29GL01GS11FAIV20 DatasheetS29GL01GS11FAIV20 Datasheet (P4-P6)S29GL01GS11FAIV20 Datasheet (P7)
ECAD Model:
थप जानकारी:
S29GL01GS11FAIV20 थप जानकारी S29GL01GS11FAIV20 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
साइप्रस सेमीकन्डक्टर
उत्पादन कोटि:
न फ्ल्यास
RoHS:
Y
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
FBGA-64
शृङ्खला:
S29GL01G/512/256/128S
मेमोरी साइज:
1 Gbit
इन्टरफेस प्रकार:
समानान्तर
संगठन:
128 M x 8
समय प्रकार:
एसिन्क्रोनस
डाटा बस चौडाइ:
8 bit
आपूर्ति भोल्टेज - न्यूनतम:
2.7 V
आपूर्ति भोल्टेज - अधिकतम:
3.6 V
हालको आपूर्ति - अधिकतम:
100 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 85 C
प्याकेजिङ:
ट्रे
मेमोरी प्रकार:
NOR
गति:
110 ns
वास्तुकला:
मिररबिट ग्रहण
ब्रान्ड:
साइप्रस सेमीकन्डक्टर
नमी संवेदनशील:
हो
उत्पादन प्रकार:
न फ्ल्यास
मानक:
साझा फ्लैश इन्टरफेस (CFI)
कारखाना प्याक मात्रा:
180
उपश्रेणी:
मेमोरी र डाटा भण्डारण
व्यापार नाम:
मिररबिट ग्रहण
Tags
S29GL01GS11FA, S29GL01GS11F, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, FBGA-64
***ark
Tray Pkged / 1G Bit, 3V, 110Ns, 64-Ball Fbga, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Vio, Lowest Address Sector Protected
***ure Electronics
S29GL01GS Series 3.6 V 1 Gb (64 M x 16) 110ns SMT Parallel Flash - FBGA-64
***ress Semiconductor SCT
Parallel NOR Flash Memory, 128 Mbit Density, 90 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL128P Series 128 Mb (16M x 8) 3 V 90 ns Flash-NOR Memory - BGA-64
***et
NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 90ns 64-Pin Fortified BGA Tray
***ark
IC, FLASH MEM, 128MBIT, 90NS, 64-BGA; Memory Type:Flash - NOR; Memory Size:128Mbit; Memory Configuration:-; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:90ns; MSL:- ;RoHS Compliant: Yes
***ical
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
S29GL256P Series 256 Mb (32M x 8) 3 V 100 ns Flash-NOR Memory - BGA-64
***nell
MEMORY, FLASH, 256MBIT, 64FBGA; Memory Type:Flash; Memory Size:256Mbit; Memory Configuration:(Not Applicable); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:100ns; IC Interface Type:(Not Applicable); Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
***p One Stop
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
GL-P Series 256 Mb (32 M x 8) 3.6 V Surface Mount Mirrorbit® Flash - FBGA-64
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
भाग # Mfg। विवरण स्टक मूल्य
S29GL01GS11FAIV20
DISTI # S29GL01GS11FAIV20-ND		Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 180
Container: Tray		Temporarily Out of Stock
  • 180:$8.8898
S29GL01GS11FAIV20
DISTI # 51Y1545		Cypress SemiconductorTRAY PKGED / 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, LOWEST ADDRESS SECTOR PROTECTED0
  • 1:$8.4400
  • 10:$8.0900
  • 25:$7.8500
  • 50:$7.6700
  • 100:$7.5600
  • 200:$7.3800
  • 1000:$7.3200
S29GL01GS11FAIV20
DISTI # 727-S29GL01GS11FAIV2		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		5
  • 1:$12.9800
  • 10:$11.8000
  • 25:$10.9200
  • 50:$10.0300
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उपलब्धता
स्टक:
118
अर्डर मा:
2101
मात्रा प्रविष्ट गर्नुहोस्:
S29GL01GS11FAIV20 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १२.९८
US$ १२.९८
10
US$ ११.८०
US$ ११८.००
25
US$ १०.९२
US$ २७३.००
50
US$ १०.०३
US$ ५०१.५०
250
US$ ९.१४
US$ २ २८५.००
500
US$ ८.५५
US$ ४ २७५.००
1000
US$ ७.८५
US$ ७ ८५०.००
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