IRGP50B60PDPBF

IRGP50B60PDPBF
Mfr. #:
IRGP50B60PDPBF
निर्माता:
Infineon / IR
विवरण:
IGBT Transistors 600V Warp2 150kHz
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRGP50B60PDPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGP50B60PDPBF DatasheetIRGP50B60PDPBF Datasheet (P4-P6)IRGP50B60PDPBF Datasheet (P7-P9)IRGP50B60PDPBF Datasheet (P10-P11)
ECAD Model:
थप जानकारी:
IRGP50B60PDPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
75 A
Pd - शक्ति अपव्यय:
370 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
75 A
उचाइ:
20.7 mm
लम्बाइ:
15.87 mm
चौडाइ:
5.31 mm
ब्रान्ड:
Infineon / IR
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
400
उपश्रेणी:
IGBTs
भाग # उपनाम:
SP001536552
एकाइ वजन:
1.340411 oz
Tags
IRGP50B60PDP, IRGP50B60P, IRGP50B, IRGP5, IRGP, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD with Standard Packaging
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***nell
IGBT, SINGLE, N-CH, 600V, 75A, TO-247AC; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 370W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No
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AUIRGP50B60PD1 Series 600 V 75 A N-Channel IGBT Flange Mount - TO-247AC
***ineon SCT
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***ineon
Benefits: Optimized for 50-150kHz switching; Optimized for SMPS applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: Embedded Charger; HVAC Compressor
***nell
IGBT, 600V, 75A, WARP2, TO-247AD; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 2.35V; Power Dissipation Pd: 390W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of P
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Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247
***ca Corp
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ark
Transistor, Igbt, 600V, 75A, To-247 Rohs Compliant: Yes
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600V,48A G-series A3,B3,C3, TO-247
***S
French Electronic Distributor since 1988
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Igbt Single Transistor, 80 A, 2.5 V, 260 W, 600 V, Max-247, 3
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Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube
***nell
IGBT, 600V, 40A, TO-247 MAX; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: MAX-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic @ Vce Sat: 40A; Current Ic Continuous a Max: 80A; Current Temperature: 25°C; Fall Time tf: 45ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 260W; Power Dissipation Ptot Max: 260W; Pulsed Current Icm: 200A; Rise Time: 19ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
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IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
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IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRGP50B60PDPBF
DISTI # V99:2348_13892493
Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
28
  • 1000:$4.4500
  • 500:$4.4810
  • 250:$5.4280
  • 100:$5.8930
  • 25:$6.8540
  • 10:$7.3530
  • 1:$8.0570
IRGP50B60PDPBF
DISTI # V36:1790_13892493
Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
0
    IRGP50B60PDPBF
    DISTI # IRGP50B60PDPBF-ND
    Infineon Technologies AGIGBT 600V 75A 370W TO247AC
    RoHS: Compliant
    Min Qty: 1
    Container: Bag
    2586In Stock
    • 1000:$5.1391
    • 500:$5.9005
    • 100:$6.7761
    • 10:$8.1850
    • 1:$9.0600
    IRGP50B60PDPBF
    DISTI # 32381299
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant
    4500
    • 25:$6.9733
    IRGP50B60PDPBF
    DISTI # 32669130
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant
    273
    • 1250:$4.2144
    • 625:$4.3104
    • 300:$4.4064
    • 175:$4.5984
    • 125:$4.7904
    IRGP50B60PDPBF
    DISTI # 31011358
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant
    28
    • 1000:$4.7838
    • 500:$4.8171
    • 250:$5.8351
    • 100:$6.3350
    • 25:$7.3681
    • 10:$7.9045
    • 2:$8.6613
    IRGP50B60PDPBF
    DISTI # SP001536552
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC (Alt: SP001536552)
    RoHS: Compliant
    Min Qty: 1
    Europe - 250
    • 1:€4.9900
    • 10:€4.5900
    • 25:€4.3900
    • 50:€4.1900
    • 100:€4.0900
    • 500:€3.8900
    • 1000:€3.6900
    IRGP50B60PDPBF
    DISTI # IRGP50B60PDPBF
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC (Alt: IRGP50B60PDPBF)
    RoHS: Compliant
    Min Qty: 400
    Asia - 0
    • 400:$4.9801
    • 800:$4.8418
    • 1200:$4.7110
    • 2000:$4.5870
    • 4000:$4.5274
    • 10000:$4.4694
    • 20000:$4.4128
    IRGP50B60PDPBF
    DISTI # IRGP50B60PDPBF
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRGP50B60PDPBF)
    Min Qty: 81
    Container: Bulk
    Americas - 0
    • 81:$4.4900
    • 83:$4.2900
    • 164:$4.1900
    • 405:$3.9900
    • 810:$3.8900
    IRGP50B60PDPBF
    DISTI # IRGP50B60PDPBF
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRGP50B60PDPBF)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube
    Americas - 0
    • 400:$5.0232
    • 800:$4.8418
    • 1600:$4.6668
    • 2400:$4.5098
    • 4000:$4.4296
    IRGP50B60PDPBF
    DISTI # 31K2330
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 31K2330)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
      IRGP50B60PDPBF
      DISTI # 31K2330
      Infineon Technologies AGSoft Recovery Diode,DC Collector Current:75A,Collector Emitter Saturation Voltage Vce(on):3.6V,Power Dissipation Pd:370W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-RoHS Compliant: Yes64
      • 500:$5.6200
      • 250:$6.1600
      • 100:$6.4500
      • 50:$6.9400
      • 25:$7.4300
      • 10:$7.7900
      • 1:$8.6200
      IRGP50B60PDPBF
      DISTI # 70018499
      Infineon Technologies AG600V WARP2 150KHZ COPACK IGBT IN A TO-247AC PACKAGE
      RoHS: Compliant
      0
      • 125:$12.9900
      IRGP50B60PDPBFInfineon Technologies AGIRGP50B60PDPbF Series 600 V 75 A Ultrafast Soft Recovery Diode - TO-247AC
      RoHS: Compliant
      7495Tube
      • 25:$8.7150
      • 100:$7.8435
      • 99999:$6.6815
      IRGP50B60PDPBF
      DISTI # 942-IRGP50B60PDPBF
      Infineon Technologies AGIGBT Transistors 600V Warp2 150kHz
      RoHS: Compliant
      240
      • 1:$8.6200
      • 10:$7.7900
      • 25:$7.4300
      • 100:$6.4500
      • 250:$6.1600
      • 500:$5.6200
      • 1000:$4.8900
      IRGP50B60PDPBFInternational Rectifier 
      RoHS: Not Compliant
      258
      • 1000:$4.1100
      • 500:$4.3200
      • 100:$4.5000
      • 25:$4.6900
      • 1:$5.0500
      IRGP50B60PDPBFInternational Rectifier 13
        IRGP50B60PDPBF
        DISTI # 8640984P
        Infineon Technologies AGIGBT 600V 75A ULTRAFAST DIODE SMPS TO247, TU66
        • 1000:£3.6500
        • 500:£3.9400
        • 250:£4.3400
        • 100:£4.5600
        IRGP50B60PDPBF
        DISTI # XSFP00000074479
        Infineon Technologies AG 
        RoHS: Compliant
        4047 in Stock0 on Order
        • 4047:$9.1000
        • 13:$9.6400
        IRGP50B60PDPBF
        DISTI # XSKDRABS0006950
        Infineon Technologies AG 
        RoHS: Compliant
        200 in Stock0 on Order
        • 200:$6.3360
        • 125:$6.7920
        IRGP50B60PDPBF
        DISTI # 2576899
        Infineon Technologies AGIGBT, SINGLE, N-CH, 600V, 75A, TO-247AC
        RoHS: Compliant
        1100
        • 2500:$7.1000
        • 1000:$7.3700
        • 500:$8.4700
        • 250:$9.2800
        • 100:$9.7200
        • 25:$11.2000
        • 10:$11.7400
        • 1:$12.9900
        DEL-IRGP50B60PDPBF.
        DISTI # 2066606
        Infineon Technologies AGSoft Recovery Diode
        RoHS: Compliant
        64
        • 2500:$7.1000
        • 1000:$7.3700
        • 500:$8.4700
        • 250:$9.2800
        • 100:$9.7200
        • 25:$11.2000
        • 10:$11.7400
        • 1:$12.9900
        IRGP50B60PDPBF
        DISTI # 2576899
        Infineon Technologies AGIGBT, SINGLE, N-CH, 600V, 75A, TO-247AC
        RoHS: Compliant
        1103
        • 100:£5.0200
        • 50:£5.4100
        • 10:£5.7800
        • 5:£6.7100
        • 1:£7.2700
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        मात्रा प्रविष्ट गर्नुहोस्:
        IRGP50B60PDPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
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        25
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        US$ ११ ७७५.००
        2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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