SISF02DN-T1-GE3

Mfr. #:: SISF02DN-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET Common Drain Dual N-Channel 25 V (S1-S2) MOSFET
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SISF02DN-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: SISF02DN-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: E

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-1212-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 40 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 2.15 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.1 V

Vgs - गेट-स्रोत भोल्टेज:: - 16 V, 20 V

Qg - गेट चार्ज:: 51 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 52 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: PowerPAK

प्याकेजिङ:: रील

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 105 S

पतन समय:: 10 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 17 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 25 ns

सामान्य टर्न-अन ढिलाइ समय:: 24 ns

Tags: SISF, SIS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISF02DN-T1-GE3 थप जानकारी

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

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उपलब्धता

स्टक:: 47
अर्डर मा:: 2030
मात्रा प्रविष्ट गर्नुहोस्:

SISF02DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.५७~~; ~~US$ १.५७~~

10: ~~US$ १.२९~~; ~~US$ १२.९०~~

100: ~~US$ ०.९९~~; ~~US$ ९९.३०~~

500: ~~US$ ०.८५~~; ~~US$ ४२७.००~~

1000: ~~US$ ०.६७~~; ~~US$ ६७४.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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SISF02DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes