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SSM6N67NU,LF

SSM6N67NU,LF
Mfr. #:
SSM6N67NU,LF
निर्माता:
Toshiba
विवरण:
MOSFET LowON Res MOSFET ID=4A VDSS=30V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SSM6N67NU,LF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM6N67NU,LF DatasheetSSM6N67NU,LF Datasheet (P4-P6)SSM6N67NU,LF Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SSM6N67NU,LF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
UDFN-6
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
4 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
39.1 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
400 mV
Vgs - गेट-स्रोत भोल्टेज:
12 V, - 8 V
Qg - गेट चार्ज:
3.2 nC
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
1 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
SSM6N67NU
ब्रान्ड:
तोशिबा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
6 S
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
17 ns
सामान्य टर्न-अन ढिलाइ समय:
26 ns
एकाइ वजन:
0.000300 oz
Tags
SSM6N6, SSM6N, SSM6, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
U-MOSVIII-H Low Voltage High Efficiency MOSFETs
Toshiba's U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, etc., as well as DC-DC power supplies for communication equipment, servers and data centers. Fabricated with the latest Gen-8 trench MOS process, these will help improve the efficiency of power supplies. Features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. U-MOSVIII-H now includes new automotive-qualified MOSFETs in a small package.
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उपलब्धता
स्टक:
Available
अर्डर मा:
1987
मात्रा प्रविष्ट गर्नुहोस्:
SSM6N67NU,LF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.५५
US$ ०.५५
10
US$ ०.३६
US$ ३.६०
100
US$ ०.२०
US$ २०.१०
1000
US$ ०.१५
US$ १४६.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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