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SI9933CDY-T1-E3

SI9933CDY-T1-E3
Mfr. #:
SI9933CDY-T1-E3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI9933CDY-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI9933CDY-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI9933CDY-E3
एकाइ - वजन
0.006596 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-50°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
दोहोरो
FET-प्रकार
2 P-Channel (Dual)
पावर-अधिकतम
3.1W
ट्रान्जिस्टर-प्रकार
2 P-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
665pF @ 10V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
4A
Rds-on-max-Id-Vgs
58 mOhm @ 4.8A, 4.5V
Vgs-th-max-Id
1.4V @ 250μA
गेट-चार्ज-Qg-Vgs
26nC @ 10V
Pd-शक्ति-डिसिपेशन
2 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 50 C
पतन-समय
13 ns
उदय-समय
50 ns
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
4 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 20 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
58 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
29 ns
सामान्य-टर्न-अन-डिले-समय
21 ns
च्यानल-मोड
वृद्धि
Tags
SI9933CDY-T, SI9933CD, SI9933C, SI9933, SI993, SI99, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC
***nell
MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI9933CDY-T1-E3
DISTI # V72:2272_09216526		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R
RoHS: Compliant		227
  • 100:$0.3264
  • 25:$0.4045
  • 10:$0.4093
  • 1:$0.4844
SI9933CDY-T1-E3
DISTI # SI9933CDY-T1-E3CT-ND		Vishay SiliconixMOSFET 2P-CH 20V 4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3313In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
SI9933CDY-T1-E3
DISTI # SI9933CDY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3313In Stock
  • 1000:$0.2900
  • 500:$0.3626
  • 100:$0.4895
  • 10:$0.6340
  • 1:$0.7300
SI9933CDY-T1-E3
DISTI # SI9933CDY-T1-E3TR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.2552
SI9933CDY-T1-E3
DISTI # 25790123		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R
RoHS: Compliant		227
  • 100:$0.3264
  • 31:$0.4045
SI9933CDY-T1-E3
DISTI # SI9933CDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9933CDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2319
  • 5000:$0.2249
  • 10000:$0.2159
  • 15000:$0.2099
  • 25000:$0.2049
SI9933CDY-T1-E3
DISTI # SI9933CDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R (Alt: SI9933CDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI9933CDY-T1-E3
    DISTI # 16P3887    		Vishay IntertechnologiesTrans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC - Product that comes on tape, but is not reeled (Alt: 16P3887)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.6400
    • 10:$0.5110
    • 25:$0.4700
    • 50:$0.4290
    • 100:$0.3880
    • 250:$0.3540
    • 500:$0.3200
    SI9933CDY-T1-E3
    DISTI # 16P3887    		Vishay IntertechnologiesDUAL P CHANNEL MOSFET, -20V, SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes2222
    • 1:$0.6400
    • 10:$0.5110
    • 25:$0.4700
    • 50:$0.4290
    • 100:$0.3880
    • 250:$0.3540
    • 500:$0.3200
    • 1000:$0.2560
    SI9933CDY-T1-E3
    DISTI # 781-SI9933CDY-E3    		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs SO-8
    RoHS: Compliant    		3592
    • 1:$0.6400
    • 10:$0.5110
    • 100:$0.3880
    • 500:$0.3200
    • 1000:$0.2560
    • 2500:$0.2320
    SI9933CDY-T1-E3
    DISTI # C1S803603830148    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		227
    • 100:$0.3264
    • 25:$0.4045
    • 10:$0.4093
    SI9933CDY-T1-E3
    DISTI # 2101482    		Vishay IntertechnologiesMOSFET, PP CH, 20V, 8SOIC
    RoHS: Compliant    		1894
    • 1:$1.0200
    • 10:$0.8090
    • 100:$0.6150
    • 500:$0.5070
    • 1000:$0.4250
    SI9933CDY-T1-E3
    DISTI # 2101482    		Vishay IntertechnologiesMOSFET, PP CH, 20V, 8SOIC
    RoHS: Compliant    		1840
    • 5:£0.4410
    • 25:£0.2690
    • 100:£0.2670
    • 250:£0.2550
    • 500:£0.2110
    छवि भाग # विवरण
    SI9933CDY-T1-GE3

    Mfr.#: SI9933CDY-T1-GE3

    OMO.#: OMO-SI9933CDY-T1-GE3

    		 MOSFET -20V Vds 12V Vgs SO-8
    SI9933CDY-T1-E3

    Mfr.#: SI9933CDY-T1-E3

    OMO.#: OMO-SI9933CDY-T1-E3

    		 MOSFET -20V Vds 12V Vgs SO-8
    SI9933CDY-T1-E3

    Mfr.#: SI9933CDY-T1-E3

    OMO.#: OMO-SI9933CDY-T1-E3-VISHAY

    		 IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
    SI9933CDY-T1-GE3-CUT TAPE

    Mfr.#: SI9933CDY-T1-GE3-CUT TAPE

    OMO.#: OMO-SI9933CDY-T1-GE3-CUT-TAPE-1190

    		 नयाँ र मौलिक
    SI9933C

    Mfr.#: SI9933C

    OMO.#: OMO-SI9933C-1190

    		 नयाँ र मौलिक
    SI9933CDY

    Mfr.#: SI9933CDY

    OMO.#: OMO-SI9933CDY-1190

    		 नयाँ र मौलिक
    SI9933CDY-T1

    Mfr.#: SI9933CDY-T1

    OMO.#: OMO-SI9933CDY-T1-1190

    		 नयाँ र मौलिक
    SI9933CDY-T1-GE3

    Mfr.#: SI9933CDY-T1-GE3

    OMO.#: OMO-SI9933CDY-T1-GE3-VISHAY

    		 MOSFET 2P-CH 20V 4A 8-SOIC
    SI9933CY-T1

    Mfr.#: SI9933CY-T1

    OMO.#: OMO-SI9933CY-T1-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4500
    मात्रा प्रविष्ट गर्नुहोस्:
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