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STU3N62K3

STU3N62K3
Mfr. #:
STU3N62K3
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-Ch, 620V-2.2ohms 2.7A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STU3N62K3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STU3N62K3 थप जानकारी STU3N62K3 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
620 V
आईडी - निरन्तर ड्रेन वर्तमान:
2.7 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.5 Ohms
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
13 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
45 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
एमडीमेश
प्याकेजिङ:
ट्यूब
उचाइ:
6.2 mm
लम्बाइ:
6.6 mm
शृङ्खला:
STU3N62K3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
2.4 mm
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
15.6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
6.8 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns
सामान्य टर्न-अन ढिलाइ समय:
9 ns
एकाइ वजन:
0.139332 oz
Tags
STU3N, STU3, STU
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package
*** Source Electronics
Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 620V 2.7A IPAK
***r Electronics
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET, N CH, 620V, 2.7A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***icroelectronics
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in IPAK package
***ure Electronics
N-Channel 620 V 2 Ohm Through Hole SuperMESH3 Power Mosfet - IPAK
***ark
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Source Voltage Vds:620V; On Resistance
***r Electronics
Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK package
*** Electronics
MOSFET Transistor, N Channel, 5 A, 600 V, 0.84 ohm, 10 V, 3 V RoHS Compliant: Yes
*** Source Electronics
MOSFET N-CH 600V 5A IPAK / Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes
***inecomponents.com
60V P-Channel A-FET / Substitute of IRFU9024
***i-Key
P-CHANNEL POWER MOSFET
***ser
MOSFETs PCh/60V/7.8a/0.28Ohm
***emi
N-Channel Power MOSFET, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK
***ure Electronics
Single N-Channel 600 V 0.90 Ohm 17 nC 52 W Silicon Through Hole Mosfet - TO-251
***el Electronic
FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
*** Stop Electro
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH, 600V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ark
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251
***ronik
N-CH 30V 35A 11mOhm TO251-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***et
Transistor MOSFET N-CH 600V 1.8A 3-Pin TO-251 T/R
***ment14 APAC
MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; Current Id Max:1.8A; Package / Case:TO-251; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Zener-Protected SuperMESH3 Power MOSFETs
STMicroelectronics new SuperMESH3™ Power MOSFETs are obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly down, special attention has been taken to ensure that these MOSFETs have a very good dynamic performance coupled with a very large avalanche capability for the most demanding switching applications. SuperMESH3™ Power MOSFETs now come in voltages up to 1200V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
भाग # Mfg। विवरण स्टक मूल्य
STU3N62K3
DISTI # 31976754		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		4873
  • 48:$0.2125
STU3N62K3
DISTI # 497-12695-5-ND		STMicroelectronicsMOSFET N-CH 620V 2.7A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 5025:$0.4818
  • 2550:$0.5071
  • 525:$0.6883
  • 150:$0.8332
  • 75:$1.0143
  • 10:$1.0690
  • 1:$1.2000
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.4399
  • 18000:$0.4489
  • 12000:$0.4699
  • 6000:$0.4919
  • 3000:$0.5169
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.1999
  • 450:€0.2159
  • 300:€0.2339
  • 150:€0.2549
  • 75:€0.3119
STU3N62K3
DISTI # 57P2562		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:620V,On Resistance Rds(on):2.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:- RoHS Compliant: Yes0
  • 10000:$0.4490
  • 2500:$0.4630
  • 1000:$0.5730
  • 500:$0.6560
  • 100:$0.7420
  • 10:$0.9660
  • 1:$1.1300
STU3N62K3
DISTI # 511-STU3N62K3		STMicroelectronicsMOSFET N-Ch, 620V-2.2ohms 2.7A
RoHS: Compliant		5980
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 3000:$0.4590
  • 9000:$0.4420
STU3N62K3STMicroelectronics 125
    STU3N62K3
    DISTI # STU3N62K3    		STMicroelectronicsTransistor: N-MOSFET,unipolar,620V,1.7A,45W,IPAK152
    • 300:$0.2800
    • 75:$0.3000
    • 25:$0.3400
    • 5:$0.4200
    • 1:$0.6500
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK
    RoHS: Compliant    		74
    • 24000:$0.6450
    • 9000:$0.6660
    • 3000:$0.6920
    • 1000:$0.7810
    • 500:$0.9890
    • 100:$1.1200
    • 10:$1.4600
    • 1:$1.7200
    STU3N62K3STMicroelectronicsN-channel 620V, 2.2, 2.7A Power MOSFET2050
    • 1:$0.2900
    • 100:$0.2700
    • 500:$0.2500
    • 1000:$0.2300
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK74
    • 500:£0.4510
    • 250:£0.4810
    • 100:£0.5090
    • 25:£0.6630
    • 5:£0.7380
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    		 Cartridge Fuses 5A, 250V, 5X20MM AXIAL
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    		 Aluminum Electrolytic Capacitors - Leaded 50V 100uF 20% 8x11.5mm
    STFU24N60M2

    Mfr.#: STFU24N60M2

    OMO.#: OMO-STFU24N60M2-STMICROELECTRONICS

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    STD10N60M2

    Mfr.#: STD10N60M2

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    		 MOSFET N-CH 600V DPAK
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1988
    मात्रा प्रविष्ट गर्नुहोस्:
    STU3N62K3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.१४
    US$ १.१४
    10
    US$ ०.९७
    US$ ९.६६
    100
    US$ ०.७४
    US$ ७४.२०
    500
    US$ ०.६६
    US$ ३२८.००
    1000
    US$ ०.५२
    US$ ५१८.००
    3000
    US$ ०.४६
    US$ १ ३७७.००
    9000
    US$ ०.४४
    US$ ३ ९७८.००
    24000
    US$ ०.४३
    US$ १० २७२.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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