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IPB039N10N3 G

IPB039N10N3 G
Mfr. #:
IPB039N10N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB039N10N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB039N10N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PG-TO-263-7
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
160 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
3.9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
88 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
214 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
OptiMOS 3 Power-Transistor
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
76 S
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
59 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
48 ns
सामान्य टर्न-अन ढिलाइ समय:
27 ns
भाग # उपनाम:
IPB039N10N3GATMA1 IPB39N1N3GXT SP000482428
एकाइ वजन:
0.056438 oz
Tags
IPB039N1, IPB039, IPB03, IPB0, IPB
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB039N10N3GE8187ATMA1
DISTI # V36:1790_06377394		Infineon Technologies AGN-KANAL POWER MOS0
    IPB039N10N3GATMA1
    DISTI # V36:1790_06377391    		Infineon Technologies AGTrans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		0
      IPB039N10N3GATMA1
      DISTI # V72:2272_06377391      		Infineon Technologies AGTrans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R
      RoHS: Compliant      		0
        IPB039N10N3GATMA1
        DISTI # IPB039N10N3GATMA1TR-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape & Reel (TR)        		On Order
        • 5000:$1.2870
        • 2000:$1.3365
        • 1000:$1.4355
        IPB039N10N3GATMA1
        DISTI # IPB039N10N3GATMA1CT-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Temporarily Out of Stock
        • 500:$1.7845
        • 100:$2.1720
        • 10:$2.7020
        • 1:$3.0100
        IPB039N10N3GATMA1
        DISTI # IPB039N10N3GATMA1DKR-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Temporarily Out of Stock
        • 500:$1.7845
        • 100:$2.1720
        • 10:$2.7020
        • 1:$3.0100
        IPB039N10N3GE8187ATMA1
        DISTI # IPB039N10N3GE8187ATMA1TR-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 1000:$1.6737
        IPB039N10N3 G
        DISTI # IPB039N10N3 G        		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R (Alt: IPB039N10N3 G)
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape and Reel        		Asia - 0
          IPB039N10N3 G
          DISTI # IPB039N10N3G          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Bulk (Alt: IPB039N10N3G)
          RoHS: Compliant
          Min Qty: 278
          Container: Bulk          		Americas - 0
          • 1390:$1.0900
          • 2780:$1.0900
          • 278:$1.1900
          • 556:$1.1900
          • 834:$1.1900
          IPB039N10N3 G
          DISTI # SP000482428          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R (Alt: SP000482428)
          RoHS: Compliant
          Min Qty: 1000
          Container: Tape and Reel          		Europe - 0
          • 10000:€0.9129
          • 6000:€0.9499
          • 4000:€0.9799
          • 2000:€1.0559
          • 1000:€1.3599
          IPB039N10N3GXT
          DISTI # IPB039N10N3GATMA1          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1)
          RoHS: Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
          • 10000:$0.9139
          • 6000:$0.9309
          • 4000:$0.9629
          • 2000:$0.9999
          • 1000:$1.0369
          IPB039N10N3GE8197ATMA1
          DISTI # IPB039N10N3GE8197ATMA1          		Infineon Technologies AG- Bulk (Alt: IPB039N10N3GE8197ATMA1)
          Min Qty: 253
          Container: Bulk          		Americas - 0
          • 1265:$1.1900
          • 2530:$1.1900
          • 506:$1.2900
          • 759:$1.2900
          • 253:$1.3900
          IPB039N10N3GE8187ATMA1
          DISTI # IPB039N10N3GE8187ATMA1          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GE8187ATMA1)
          RoHS: Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
            IPB039N10N3GATMA1
            DISTI # 47W3465            		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes0
            • 500:$1.5900
            • 100:$1.8200
            • 10:$2.2700
            • 1:$2.6700
            IPB039N10N3 G
            DISTI # 726-IPB039N10N3G            		Infineon Technologies AGMOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
            RoHS: Compliant            		112
            • 1:$2.6400
            • 10:$2.2500
            • 100:$1.8000
            • 500:$1.5700
            • 1000:$1.3000
            • 2000:$1.2100
            • 5000:$1.1700
            IPB039N10N3GATMA1
            DISTI # 726-IPB039N10N3GATMA            		Infineon Technologies AGMOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
            RoHS: Compliant            		0
            • 1:$2.6400
            • 10:$2.2500
            • 100:$1.8000
            • 500:$1.5700
            • 1000:$1.3000
            • 2000:$1.2100
            • 5000:$1.1700
            IPB039N10N3GE8187ATMA1
            DISTI # 726-IPB039N10N3GE818            		Infineon Technologies AGMOSFET MV POWER MOS
            RoHS: Compliant            		0
            • 1:$2.8800
            • 10:$2.4500
            • 100:$2.1200
            • 250:$2.0200
            • 500:$1.8100
            • 1000:$1.5300
            • 2000:$1.4500
            • 5000:$1.4000
            IPB039N10N3GInfineon Technologies AGPower Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
            RoHS: Compliant            		4
            • 1000:$1.1800
            • 500:$1.2500
            • 100:$1.3000
            • 25:$1.3500
            • 1:$1.4600
            IPB039N10N3GE8197ATMA1Infineon Technologies AG 
            RoHS: Not Compliant            		3
            • 1000:$1.3000
            • 500:$1.3700
            • 100:$1.4300
            • 25:$1.4900
            • 1:$1.6000
            IPB039N10N3GInfineon Technologies AG 243
              IPB039N10N3GInfineon Technologies AG*** FREE SHIPPING ORDERS OVER $100 *** 160 A, 100 V, 0.0039 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AA16
              • 17:$4.3000
              • 6:$4.7300
              • 1:$6.4500
              IPB039N10N3 G  129
                IPB039N10N3GATMA1
                DISTI # IPB039N10N3GATMA1                		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,160A,214W,PG-TO263-758
                • 1:$1.8047
                • 3:$1.6242
                • 10:$1.4325
                • 100:$1.2407
                • 1000:$1.1618
                IPB039N10N3GATMA1
                DISTI # 2212838                		Infineon Technologies AGMOSFET, N-CH, 100V, 160A, TO263-7
                RoHS: Compliant                		0
                • 2000:$1.8600
                • 1000:$2.0000
                • 500:$2.4200
                • 100:$2.7700
                • 10:$3.4600
                • 1:$4.0600
                IPB039N10N3GATMA1
                DISTI # 2212838                		Infineon Technologies AGMOSFET, N-CH, 100V, 160A, TO263-70
                • 500:£1.2200
                • 250:£1.3100
                • 100:£1.3900
                • 10:£1.7500
                • 1:£2.3200
                IPB039N10N3GInfineon Technologies AG100V,160A,N Channel Power MOSFET39
                • 1:$2.0800
                • 100:$1.7400
                • 500:$1.5300
                • 1000:$1.4900
                IPB039N10N3 GInfineon Technologies AGRoHS(ship within 1day)20
                • 1:$4.2400
                • 10:$3.1800
                • 50:$2.8000
                • 100:$2.3900
                • 500:$2.2300
                • 1000:$2.1500
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                उपलब्धता
                स्टक:
                Available
                अर्डर मा:
                1985
                मात्रा प्रविष्ट गर्नुहोस्:
                IPB039N10N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
                सन्दर्भ मूल्य (USD)
                मात्रा
                एकाइ मूल्य
                विस्तार मूल्य
                1
                US$ २.६४
                US$ २.६४
                10
                US$ २.२५
                US$ २२.५०
                100
                US$ १.८०
                US$ १८०.००
                500
                US$ १.५७
                US$ ७८५.००
                2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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