IPP60R099C7XKSA1

IPP60R099C7XKSA1
Mfr. #:
IPP60R099C7XKSA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET HIGH POWER_NEW
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPP60R099C7XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPP60R099C7XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
22 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
85 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
42 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
110 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
ट्यूब
उचाइ:
15.65 mm
लम्बाइ:
10 mm
शृङ्खला:
CoolMOS C7
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.4 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
4.5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
54 ns
सामान्य टर्न-अन ढिलाइ समय:
11.8 ns
भाग # उपनाम:
IPP60R099C7 SP001298000
एकाइ वजन:
0.211644 oz
Tags
IPP60R099C, IPP60R099, IPP60R09, IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 99 mOhm 42 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 22A, 150Deg C, 110W; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
भाग # Mfg। विवरण स्टक मूल्य
IPP60R099C7XKSA1
DISTI # V99:2348_06377510
Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
1500
  • 500:$3.1380
  • 250:$3.5250
  • 100:$3.7530
  • 10:$4.3660
  • 1:$5.7035
IPP60R099C7XKSA1
DISTI # V36:1790_06377510
Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 500000:$2.3090
  • 250000:$2.3140
  • 50000:$2.9460
  • 5000:$4.2350
  • 500:$4.4600
IPP60R099C7XKSA1
DISTI # IPP60R099C7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 22A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
482In Stock
  • 2500:$2.7538
  • 500:$3.4370
  • 100:$4.0375
  • 25:$4.6588
  • 10:$4.9280
  • 1:$5.4900
IPP60R099C7XKSA1
DISTI # 33725814
Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
1500
  • 3:$5.7035
IPP60R099C7XKSA1
DISTI # 33925793
Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
500
  • 500:$4.8594
IPP60R099C7XKSA1
DISTI # IPP60R099C7XKSA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPP60R099C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 3000:$2.4900
  • 5000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
  • 500:$2.7900
IPP60R099C7XKSA1
DISTI # IPP60R099C7
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPP60R099C7)
RoHS: Compliant
Min Qty: 500
Asia - 0
  • 25000:$2.4961
  • 12500:$2.5281
  • 5000:$2.5609
  • 2500:$2.5946
  • 1500:$2.6647
  • 1000:$2.7388
  • 500:$2.8170
IPP60R099C7XKSA1
DISTI # SP001298000
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001298000)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.0900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.8900
IPP60R099C7XKSA1
DISTI # 13AC9081
Infineon Technologies AGMOSFET, N-CH, 600V, 22A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
  • 500:$3.3000
  • 250:$3.6800
  • 100:$3.8800
  • 50:$4.0800
  • 25:$4.2800
  • 10:$4.4700
  • 1:$5.2700
IPP60R099C7XKSA1Infineon Technologies AGSingle N-Channel 600 V 99 mOhm 42 nC CoolMOS Power Mosfet - TO-220-3
RoHS: Compliant
500Tube
  • 5:$4.9600
  • 25:$4.0200
  • 50:$3.8400
  • 100:$3.6700
  • 250:$3.4600
IPP60R099C7XKSA1
DISTI # 726-IPP60R099C7XKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
479
  • 1:$5.2200
  • 10:$4.4300
  • 100:$3.8400
  • 250:$3.6400
  • 500:$3.2700
IPP60R099C7XKSA1
DISTI # 2726067
Infineon Technologies AGMOSFET, N-CH, 600V, 22A, TO-220-3
RoHS: Compliant
0
  • 2500:$4.1700
  • 500:$5.1800
  • 100:$6.0900
  • 25:$7.0300
  • 10:$7.4300
  • 1:$8.2700
IPP60R099C7XKSA1
DISTI # 2726067
Infineon Technologies AGMOSFET, N-CH, 600V, 22A, TO-220-31490
  • 500:£2.5200
  • 250:£2.8100
  • 100:£2.9600
  • 10:£3.4100
  • 1:£4.4600
IPP60R099C7XKSA1
DISTI # XSFP00000050344
Infineon Technologies AG 
RoHS: Compliant
1000 in Stock0 on Order
  • 1000:$6.6100
  • 500:$7.0900
IPP60R099C7XKSA1
DISTI # IPP60R099C7
Infineon Technologies AGN-Ch 600V 22A 110W 0,099R TO220
RoHS: Compliant
0
  • 1:€6.8100
  • 10:€3.8100
  • 50:€2.8100
  • 100:€2.5800
छवि भाग # विवरण
FCP099N65S3

Mfr.#: FCP099N65S3

OMO.#: OMO-FCP099N65S3

MOSFET SuperFET3 650V 99 mOhm,TO220 PKG
UCC28951QPWRQ1

Mfr.#: UCC28951QPWRQ1

OMO.#: OMO-UCC28951QPWRQ1

Switching Controllers GREEN PHASE-SHIFTED FULL-BRIDGE CONTROLL
LM5161QPWPRQ1

Mfr.#: LM5161QPWPRQ1

OMO.#: OMO-LM5161QPWPRQ1

Switching Voltage Regulators LM5161-Q1
BBB01-SC-505

Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505

Single Board Computers Beaglebone Black Rev C
LM5161QPWPRQ1

Mfr.#: LM5161QPWPRQ1

OMO.#: OMO-LM5161QPWPRQ1-TEXAS-INSTRUMENTS

IC REG BCK FLYBCK ADJ 14HTSSOP
GT06-111-049

Mfr.#: GT06-111-049

OMO.#: OMO-GT06-111-049-1190

Pulse Transformers Gate Drive Transforme
FCP099N65S3

Mfr.#: FCP099N65S3

OMO.#: OMO-FCP099N65S3-ON-SEMICONDUCTOR

MOSFET N-CH 650V 30A TO220-3
TG111-MSCE13LF

Mfr.#: TG111-MSCE13LF

OMO.#: OMO-TG111-MSCE13LF-1190

(Alt: TG111-MSCE13LF)
BBB01-SC-505

Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505-GHI-ELECTRONICS

Beagle Bone Black
UCC28951QPWRQ1

Mfr.#: UCC28951QPWRQ1

OMO.#: OMO-UCC28951QPWRQ1-TEXAS-INSTRUMENTS

IC REG CTRLR FULL-BRIDGE 24TSSOP
उपलब्धता
स्टक:
472
अर्डर मा:
2455
मात्रा प्रविष्ट गर्नुहोस्:
IPP60R099C7XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.२२
US$ ५.२२
10
US$ ४.४३
US$ ४४.३०
100
US$ ३.८४
US$ ३८४.००
250
US$ ३.६४
US$ ९१०.००
500
US$ ३.२७
US$ १ ६३५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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