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SI7212DN-T1-GE3

SI7212DN-T1-GE3
Mfr. #:
SI7212DN-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 30V 6.8A 2.6W 36mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7212DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI7212DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
-
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI7212DN-GE3
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
PowerPAKR 1212-8 Dual
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
PowerPAKR 1212-8 Dual
कन्फिगरेसन
दोहोरो
FET-प्रकार
2 N-Channel (Dual)
पावर-अधिकतम
1.3W
ट्रान्जिस्टर-प्रकार
2 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
4.9A
Rds-on-max-Id-Vgs
36 mOhm @ 6.8A, 10V
Vgs-th-max-Id
1.6V @ 250μA
गेट-चार्ज-Qg-Vgs
11nC @ 4.5V
Pd-शक्ति-डिसिपेशन
1.3 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
Vgs-गेट-स्रोत-भोल्टेज
12 V
आईडी-निरन्तर-नाली-वर्तमान
4.9 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
36 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
SI7212D, SI7212, SI721, Si72, SI7
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R
*** Europe
N-CH DUAL 30V PPAK 1212-8
***
30V N-CHANNEL DUAL
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 4.9A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6220In Stock
  • 1000:$0.6326
  • 500:$0.8012
  • 100:$1.0332
  • 10:$1.3070
  • 1:$1.4800
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 4.9A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6220In Stock
  • 1000:$0.6326
  • 500:$0.8012
  • 100:$1.0332
  • 10:$1.3070
  • 1:$1.4800
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 4.9A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.5732
SI7212DN-T1-GE3
DISTI # SI7212DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7212DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6059
  • 6000:$0.5879
  • 12000:$0.5639
  • 18000:$0.5489
  • 30000:$0.5339
SI7212DN-T1-GE3
DISTI # 18X0020		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 4.9A, POWERPAK,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:600mVRoHS Compliant: Yes0
  • 1:$1.6300
  • 10:$1.3500
  • 25:$1.2500
  • 50:$1.1400
  • 100:$1.0400
  • 500:$1.0200
  • 1000:$1.0100
SI7212DN-T1-GE3.
DISTI # 30AC0188		Vishay IntertechnologiesContinuous Drain Current Id:4.9A,Drain Source Voltage Vds:30V,Automotive Qualification Standard:- RoHS Compliant: No0
  • 1:$1.0900
  • 3000:$1.0800
  • 6000:$1.0600
  • 12000:$1.0500
  • 18000:$1.0400
  • 30000:$1.0200
SI7212DN-T1-GE3
DISTI # 781-SI7212DN-GE3		Vishay IntertechnologiesMOSFET 30V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		3455
  • 1:$1.6300
  • 10:$1.3500
  • 100:$1.0300
  • 500:$0.8850
  • 1000:$0.7770
  • 3000:$0.7760
SI7212DN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 12V Vgs PowerPAK 1212-8Americas -
    छवि भाग # विवरण
    SI7212DN-T1-E3

    Mfr.#: SI7212DN-T1-E3

    OMO.#: OMO-SI7212DN-T1-E3

    		 MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
    SI7212DN-T1-GE3

    Mfr.#: SI7212DN-T1-GE3

    OMO.#: OMO-SI7212DN-T1-GE3

    		 MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
    SI7212DN-T1-GE3

    Mfr.#: SI7212DN-T1-GE3

    OMO.#: OMO-SI7212DN-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 30V 6.8A 2.6W 36mohm @ 10V
    SI7212DN-T1-E3

    Mfr.#: SI7212DN-T1-E3

    OMO.#: OMO-SI7212DN-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET DUAL N-CH 30V (D-S) FAST SWITCHING
    SI7212DN

    Mfr.#: SI7212DN

    OMO.#: OMO-SI7212DN-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3500
    मात्रा प्रविष्ट गर्नुहोस्:
    SI7212DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.८०
    US$ ०.८०
    10
    US$ ०.७६
    US$ ७.६१
    100
    US$ ०.७२
    US$ ७२.०८
    500
    US$ ०.६८
    US$ ३४०.३५
    1000
    US$ ०.६४
    US$ ६४०.७०
    बाट सुरु गर्नुहोस्
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