IPD110N12N3GATMA1

Mfr. #:: IPD110N12N3GATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET MV POWER MOS
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPD110N12N3GATMA1 डाटा पाना
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ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PG-TO-252-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 120 V

आईडी - निरन्तर ड्रेन वर्तमान:: 75 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 11 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 10 V

Qg - गेट चार्ज:: 49 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 136 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 2.3 mm

लम्बाइ:: 6.5 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 6.22 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 42 S

पतन समय:: 8 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 16 ns

कारखाना प्याक मात्रा:: 2500

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 24 ns

सामान्य टर्न-अन ढिलाइ समय:: 16 ns

भाग # उपनाम:: G IPD110N12N3 SP001127808

एकाइ वजन:: 0.017284 oz

Tags: IPD110, IPD11, IPD1, IPD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD110N12N3GATMA1 विवरण

***ark: MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drai

***ure Electronics: Single N-Channel 120 V 11 mOhm 49 nC OptiMOS Power Mosfet - DPAK

***p One Stop Japan: Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPD110N12N3GATMA1 DISTI # V72:2272_06383619	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	299	250:$1.1297 100:$1.2551 25:$1.5564 10:$1.5606 1:$2.0189
IPD110N12N3GATMA1 DISTI # V36:1790_06383619	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	0	2500000:$0.7354 1250000:$0.7358 250000:$0.7840 25000:$0.8786 2500:$0.8949
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13340In Stock	1000:$0.9900 500:$1.1948 100:$1.4543 10:$1.8090 1:$2.0100
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13340In Stock	1000:$0.9900 500:$1.1948 100:$1.4543 10:$1.8090 1:$2.0100
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 120V 75A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	5000:$0.8617 2500:$0.8949
IPD110N12N3GATMA1 DISTI # 31696314	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A Automotive 3-Pin(2+Tab) DPAK T/R	299	8:$2.0189
IPD110N12N3GATMA1 DISTI # IPD110N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD110N12N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.8019 15000:$0.8159 10000:$0.8449 5000:$0.8759 2500:$0.9089
IPD110N12N3GATMA1 DISTI # SP001127808	Infineon Technologies AG	Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R (Alt: SP001127808) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.6859 15000:€0.7349 10000:€0.7919 5000:€0.8579 2500:€1.0299
IPD110N12N3GATMA1 DISTI # 47W3469	Infineon Technologies AG	MOSFET, N CHANNEL, 120V, 75A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0092ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2152	1000:$1.0200 500:$1.2200 250:$1.3100 100:$1.4000 50:$1.5200 25:$1.6300 10:$1.7500 1:$2.0600
IPD110N12N3GATMA1 DISTI # 726-IPD110N12N3GATM1	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	9748	1:$1.8500 10:$1.5700 100:$1.2600 500:$1.1000 1000:$0.9160 2500:$0.8530 5000:$0.8210 10000:$0.7900
IPD110N12N3GATMA1 DISTI # 7545462P	Infineon Technologies AG	MOSFET N-CHANNEL 120V 75A OPTIMOS3 TO252, RL	1844	1250:£0.6700 626:£0.7450 126:£0.8350 26:£0.9250
IPD110N12N3GATMA1 DISTI # 7545462	Infineon Technologies AG	MOSFET N-CHANNEL 120V 75A OPTIMOS3 TO252, PK	106	1250:£0.6700 626:£0.7450 126:£0.8350 26:£0.9250 2:£1.5200
IPD110N12N3GATMA1 DISTI # 2212834	Infineon Technologies AG	MOSFET, N-CH, 120V, 75A, TO252-3 RoHS: Compliant	1117	10000:$1.2400 5000:$1.2700 2500:$1.3300 1000:$1.4200 500:$1.6300 100:$1.9300 10:$2.3600 1:$2.7200
IPD110N12N3GATMA1 DISTI # 2212834	Infineon Technologies AG	MOSFET, N-CH, 120V, 75A, TO252-3	3527	500:£0.8570 250:£0.9190 100:£0.9800 10:£1.2600 1:£1.6400

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उपलब्धता

स्टक:: 13
अर्डर मा:: 1996
मात्रा प्रविष्ट गर्नुहोस्:

IPD110N12N3GATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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मात्रा
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500: ~~US$ १.१०~~; ~~US$ ५५०.००~~

1000: ~~US$ ०.९२~~; ~~US$ ९१६.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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IPD110N12N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes