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SI2319DS-T1-GE3

SI2319DS-T1-GE3
Mfr. #:
SI2319DS-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 40V 3.0A 1.25W 82mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2319DS-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2319DS-T1-GE3 DatasheetSI2319DS-T1-GE3 Datasheet (P4-P6)SI2319DS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SI2319DS-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-23-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
2.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
82 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
11.3 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
0.75 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.45 mm
लम्बाइ:
2.9 mm
शृङ्खला:
SI2
ट्रान्जिस्टर प्रकार:
1 P-Channel
चौडाइ:
1.6 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
7 S
पतन समय:
25 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
15 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
25 ns
सामान्य टर्न-अन ढिलाइ समय:
7 ns
भाग # उपनाम:
SI2319DS-GE3
एकाइ वजन:
0.000282 oz
Tags
SI2319DS-T, SI2319DS, SI2319D, SI2319, SI231, SI23, SI2
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 40 V 82 mO 17 nC Surface Mount Power Mosfet - SOT-23
***et
Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:750mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
भाग # Mfg। विवरण स्टक मूल्य
SI2319DS-T1-GE3
DISTI # V72:2272_09216803		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET
RoHS: Compliant		466
  • 500:$0.3784
  • 250:$0.4106
  • 100:$0.4562
  • 25:$0.5402
  • 10:$0.6602
  • 1:$0.8143
SI2319DS-T1-GE3
DISTI # V36:1790_09216803		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET
RoHS: Compliant		0
  • 3000000:$0.2591
  • 1500000:$0.2592
  • 300000:$0.2699
  • 30000:$0.2866
  • 3000:$0.2893
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 40V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1570In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 40V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1570In Stock
  • 1000:$0.3288
  • 500:$0.4110
  • 100:$0.5199
  • 10:$0.6780
  • 1:$0.7700
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 40V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.2527
  • 15000:$0.2594
  • 6000:$0.2693
  • 3000:$0.2893
SI2319DS-T1-GE3
DISTI # 32404566		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET
RoHS: Compliant		466
  • 27:$0.8143
SI2319DS-T1-GE3
DISTI # SI2319DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI2319DS-T1-GE3
    DISTI # 15R4910    		Vishay IntertechnologiesP CHANNEL MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,No. of Pins:3PinsRoHS Compliant: Yes0
    • 50000:$0.2460
    • 30000:$0.2570
    • 20000:$0.2760
    • 10000:$0.2950
    • 5000:$0.3200
    • 1:$0.3270
    SI2319DS-T1-GE3
    DISTI # 84R8030    		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.3A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:750mW RoHS Compliant: Yes0
    • 1000:$0.3070
    • 500:$0.3840
    • 250:$0.4240
    • 100:$0.4650
    • 50:$0.5390
    • 25:$0.6130
    • 1:$0.7580
    SI2319DS-T1-GE3
    DISTI # 781-SI2319DS-GE3    		Vishay IntertechnologiesMOSFET 40V 3.0A 1.25W 82mohm @ 10V
    RoHS: Compliant    		8364
    • 1:$0.7500
    • 10:$0.6060
    • 100:$0.4590
    • 500:$0.3800
    • 1000:$0.3040
    • 3000:$0.2750
    • 6000:$0.2560
    • 9000:$0.2470
    SI2319DS-T1-GE3
    DISTI # 1867181    		Vishay IntertechnologiesP CH MOSFET
    RoHS: Compliant    		0
    • 10:$0.2390
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1991
    मात्रा प्रविष्ट गर्नुहोस्:
    SI2319DS-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ०.७५
    US$ ०.७५
    10
    US$ ०.६१
    US$ ६.०६
    100
    US$ ०.४६
    US$ ४५.९०
    500
    US$ ०.३८
    US$ १९०.००
    1000
    US$ ०.३०
    US$ ३०४.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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