IPB60R080P7ATMA1

Mfr. #:: IPB60R080P7ATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET HIGH POWER_NEW
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB60R080P7ATMA1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: IPB60R080P7ATMA1 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 600 V

आईडी - निरन्तर ड्रेन वर्तमान:: 37 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 69 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 3 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 51 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 129 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

प्याकेजिङ:: रील

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Infineon टेक्नोलोजीहरू

पतन समय:: 5 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 10 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 70 ns

सामान्य टर्न-अन ढिलाइ समय:: 15 ns

भाग # उपनाम:: IPB60R080P7 SP001664898

Tags: IPB60R0, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R080P7ATMA1 विवरण

***ure Electronics: Single N-Channel 600 V 80 mOhm 51 nC CoolMOS Power Mosfet - D2PAK

***ineon: Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

***ark: Mosfet, N-Ch, 600V, 37A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

IPB60R080P7ATMA1 थप जानकारी

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB60R080P7ATMA1 DISTI # V72:2272_18787575	Infineon Technologies AG	HIGH POWER_NEW	1161	1000:$2.6860 500:$3.3980 250:$3.4070 100:$3.7350 25:$3.8760 10:$4.3070 1:$5.5704
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1733In Stock	500:$3.4604 100:$4.0650 10:$4.9610 1:$5.5200
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1733In Stock	500:$3.4604 100:$4.0650 10:$4.9610 1:$5.5200
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$2.6985 1000:$2.8334
IPB60R080P7ATMA1 DISTI # 26413980	Infineon Technologies AG	HIGH POWER_NEW	1161	1000:$2.6860 500:$3.3980 250:$3.4070 100:$3.7350 25:$3.8760 10:$4.3070 3:$5.5704
IPB60R080P7ATMA1 DISTI # 32684970	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$3.4933
IPB60R080P7ATMA1 DISTI # IPB60R080P7ATMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPB60R080P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$2.3900 10000:$2.3900 4000:$2.4900 2000:$2.5900 1000:$2.6900
IPB60R080P7ATMA1 DISTI # 49AC7994	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	419	500:$3.2300 250:$3.6000 100:$3.7900 50:$3.9800 25:$4.1800 10:$4.3700 1:$5.1500
IPB60R080P7ATMA1 DISTI # 726-IPB60R080P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	1613	1:$5.1000 10:$4.3300 100:$3.7500 250:$3.5600 500:$3.2000 1000:$2.6900 2000:$2.5600
IPB60R080P7ATMA1	Infineon Technologies AG	Single N-Channel 600 V 80 mOhm 51 nC CoolMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$2.5000
IPB60R080P7ATMA1 DISTI # 2841642	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-263 RoHS: Compliant	399	1000:$3.8600 500:$3.9400 250:$4.1600 100:$4.3900 10:$4.9600 1:$5.3100
IPB60R080P7ATMA1 DISTI # 2841642	Infineon Technologies AG	MOSFET, N-CH, 600V, 37A, TO-263	424	500:£2.4800 250:£2.7800 100:£2.9200 10:£3.3600 1:£4.4000
IPB60R080P7ATMA1 DISTI # XSFP00000131402	Infineon Technologies AG	RoHS: Compliant	2000 in Stock0 on Order	2000:$2.7800 1000:$2.9400

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: FCB070N65S3 OMO.#: OMO-FCB070N65S3	MOSFET SuperFET3 650V 70mOhm
	Mfr.#: STPSC10H065GY-TR OMO.#: OMO-STPSC10H065GY-TR	Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
	Mfr.#: RC0805FR-0710KL OMO.#: OMO-RC0805FR-0710KL	Thick Film Resistors - SMD 10K OHM 1%
	Mfr.#: RC0805FR-071K62L OMO.#: OMO-RC0805FR-071K62L	Thick Film Resistors - SMD 1.62K OHM 1%
	Mfr.#: CKG57NC0G2E304J500JJ OMO.#: OMO-CKG57NC0G2E304J500JJ	Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 250V 0.30uF 5% C0G Dbl Stk AEC-Q200
	Mfr.#: FS12-090-C2 OMO.#: OMO-FS12-090-C2-TRIAD-MAGNETICS	Power Transformers 12.6V@.09A 6.3V@.18A 1.1VA 8pin Class 2
	Mfr.#: CKG57NC0G2E304J500JJ OMO.#: OMO-CKG57NC0G2E304J500JJ-TDK	Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 250V 0.30uF 5% C0G Dbl Stk AEC-Q200
	Mfr.#: FCB070N65S3 OMO.#: OMO-FCB070N65S3-ON-SEMICONDUCTOR	MOSFET N-CH 650V 44A D2PAK
	Mfr.#: RC0805FR-0724K9L OMO.#: OMO-RC0805FR-0724K9L-YAGEO	Thick Film Resistors - SMD 24.9K OHM 1%
	Mfr.#: RC0805FR-071K62L OMO.#: OMO-RC0805FR-071K62L-YAGEO	Thick Film Resistors - SMD 1.62K OHM 1%

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

IPB60R080P7ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ५.१०~~; ~~US$ ५.१०~~

10: ~~US$ ४.३३~~; ~~US$ ४३.३०~~

100: ~~US$ ३.७५~~; ~~US$ ३७५.००~~

250: ~~US$ ३.५६~~; ~~US$ ८९०.००~~

500: ~~US$ ३.२०~~; ~~US$ १ ६००.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

IPB60R0 24
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IPB60R080P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes