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IPI020N06NAKSA1

IPI020N06NAKSA1
Mfr. #:
IPI020N06NAKSA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 60V 120A I2PAK-3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPI020N06NAKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPI020N06NAKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-262-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.8 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
106 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
214 W
कन्फिगरेसन:
एकल
व्यापार नाम:
OptiMOS
प्याकेजिङ:
ट्यूब
उचाइ:
9.45 mm
लम्बाइ:
10.2 mm
उत्पादन:
OptiMOS पावर
शृङ्खला:
OptiMOS 5
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
OptiMOS 3 Power-Transistor
चौडाइ:
4.5 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
210 S
पतन समय:
19 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
45 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
51 ns
सामान्य टर्न-अन ढिलाइ समय:
24 ns
भाग # उपनाम:
IPI020N06N IPI2N6NXK SP000962132
एकाइ वजन:
0.084199 oz
Tags
IPI020, IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube
***p One Stop Global
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262
***et Europe
Trans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 60V 29A TO262-3
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPI020N06NAKSA1
DISTI # V36:1790_06378389		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		0
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1-ND    		Infineon Technologies AGMOSFET N-CH 60V 29A TO262-3
    RoHS: Compliant
    Min Qty: 500
    Container: Bulk    		Temporarily Out of Stock
    • 500:$2.8685
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube - Bulk (Alt: IPI020N06NAKSA1)
    RoHS: Compliant
    Min Qty: 178
    Container: Bulk    		Americas - 0
    • 174:$1.9900
    • 176:$1.8900
    • 350:$1.7900
    • 870:$1.7900
    • 1740:$1.6900
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI020N06NAKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 500:$2.1900
    • 1000:$2.0900
    • 2000:$2.0900
    • 3000:$1.9900
    • 5000:$1.8900
    IPI020N06NAKSA1
    DISTI # SP000962132    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube (Alt: SP000962132)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€2.2900
    • 10:€2.0900
    • 25:€1.9900
    • 50:€1.8900
    • 100:€1.7900
    • 500:€1.7900
    • 1000:€1.6900
    IPI020N06NAKSA1
    DISTI # 726-IPI020N06NAKSA1    		Infineon Technologies AGMOSFET N-Ch 60V 120A I2PAK-3
    RoHS: Compliant    		491
    • 1:$4.1500
    • 10:$3.5300
    • 100:$3.0600
    • 250:$2.9000
    • 500:$2.6000
    • 1000:$2.2000
    • 2500:$2.0900
    IPI020N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		19420
    • 1000:$1.8600
    • 500:$1.9500
    • 100:$2.0300
    • 25:$2.1200
    • 1:$2.2800
    छवि भाग # विवरण
    IPI020N06NAKSA1

    Mfr.#: IPI020N06NAKSA1

    OMO.#: OMO-IPI020N06NAKSA1

    		 MOSFET N-Ch 60V 120A I2PAK-3
    IPI020N06N

    Mfr.#: IPI020N06N

    OMO.#: OMO-IPI020N06N-1190

    		 नयाँ र मौलिक
    IPI020N06NAKSA1

    Mfr.#: IPI020N06NAKSA1

    OMO.#: OMO-IPI020N06NAKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 29A TO262-3
    IPI020N06NG

    Mfr.#: IPI020N06NG

    OMO.#: OMO-IPI020N06NG-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    491
    अर्डर मा:
    2474
    मात्रा प्रविष्ट गर्नुहोस्:
    IPI020N06NAKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४.१५
    US$ ४.१५
    10
    US$ ३.५३
    US$ ३५.३०
    100
    US$ ३.०६
    US$ ३०६.००
    250
    US$ २.९०
    US$ ७२५.००
    500
    US$ २.६०
    US$ १ ३००.००
    1000
    US$ २.२०
    US$ २ २००.००
    2500
    US$ २.०९
    US$ ५ २२५.००
    5000
    US$ २.०१
    US$ १० ०५०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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