SPD08P06PGBTMA1

Mfr. #:: SPD08P06PGBTMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET P-Ch -60V -8.8A DPAK-2
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SPD08P06PGBTMA1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-252-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 60 V

आईडी - निरन्तर ड्रेन वर्तमान:: 8.83 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 230 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 4 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: - 13 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 42 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

योग्यता:: AEC-Q101

प्याकेजिङ:: रील

उचाइ:: 2.3 mm

लम्बाइ:: 6.5 mm

शृङ्खला:: XPD08P06

ट्रान्जिस्टर प्रकार:: 1 P-Channel

चौडाइ:: 6.22 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 2.5 S

पतन समय:: 14 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 46 ns

कारखाना प्याक मात्रा:: 2500

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 48 ns

सामान्य टर्न-अन ढिलाइ समय:: 16 ns

भाग # उपनाम:: G SP000450534 SPD08P06P SPD8P6PGXT

एकाइ वजन:: 0.139332 oz

Tags: SPD08P06PG, SPD08P06P, SPD08P06, SPD08P0, SPD08P, SPD08, SPD0, SPD

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD08P06PGBTMA1 विवरण

***ark: MOSFET, P-CH, 60V, 8.83A, DPAK; Transistor Polarity:P Channel; Continuous Drain

***ure Electronics: Single P-Channel 60 V 300 mOhm 10 nC SIPMOS® Power Mosfet - TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P-CH, 60V, 8.83A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.83A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:-6.2V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***ure Electronics: Single N-Channel 100V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA

***essParts.Net: INTERNATIONAL RECTIFIER IRFR120NTRPBF / MOSFET N-CH 100V 9.4A DPAK ESD IR

***(Formerly Allied Electronics): MOSFET, 100V, 9.1A, 210 mOhm, 16.7 nC Qg, D-Pak

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Source Voltage Vds:100V; On Resistance

***roFlash: Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***r Electronics: Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***emi: Power MOSFET, 100V, 225mΩ, 9A, Single N-Channel

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Product Range:-Rohs Compliant: Yes

***nell: MOSFET, N-CH, 100V, 9A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.6V; Power Dissipation Pd: 19W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***p One Stop Global: Trans MOSFET P-CH 100V 9A Automotive 3-Pin(2+Tab) TO-252 T/R

***ure Electronics: Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3

***ment14 APAC: MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Source Voltage Vds:-100V; On Resistance

***nell: MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***i-Key: MOSFET N-CH 200V 11A DPAK

***ser: MOSFETs 200V NCh PowerMOSFET UltraFET

***el Nordic: Contact for details

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SPD08P06PGBTMA1 DISTI # V72:2272_06384823	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.83A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	5	75000:$0.2740 30000:$0.3044 15000:$0.3153 6000:$0.3239 3000:$0.3292 1000:$0.3647 500:$0.3814 250:$0.4238 100:$0.4709 50:$0.7327 25:$0.7423 10:$0.8215 1:$0.9431
SPD08P06PGBTMA1 DISTI # SPD08P06PGBTMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 8.83A 3TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4630In Stock	1000:$0.3955 500:$0.5010 100:$0.6064 10:$0.7780 1:$0.8700
SPD08P06PGBTMA1 DISTI # SPD08P06PGBTMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 8.83A 3TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4630In Stock	1000:$0.3955 500:$0.5010 100:$0.6064 10:$0.7780 1:$0.8700
SPD08P06PGBTMA1 DISTI # SPD08P06PGBTMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 8.83A 3TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3242 12500:$0.3328 5000:$0.3456 2500:$0.3712
SPD08P06PGBTMA1 DISTI # 33152147	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.83A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.4188
SPD08P06PGBTMA1 DISTI # SPD08P06PGBTMA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.83A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD08P06PGBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2399 15000:$0.2459 10000:$0.2529 5000:$0.2599 2500:$0.2669
SPD08P06PGBTMA1 DISTI # SP000450534	Infineon Technologies AG	Trans MOSFET P-CH 60V 8.83A 3-Pin(2+Tab) TO-252 (Alt: SP000450534) RoHS: Compliant Min Qty: 2500	Europe - 0	25000:€0.2869 15000:€0.3089 10000:€0.3429 5000:€0.3859 2500:€0.4549
SPD08P06PGBTMA1 DISTI # 47W3758	Infineon Technologies AG	MOSFET, P CHANNEL, 60V, 8.83A, DPAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.83A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:-6.2V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	0	1000:$0.3950 500:$0.4440 100:$0.4930 10:$0.7640 1:$0.9190
SPD08P06PGBTMA1 DISTI # 726-SPD08P06PGBTMA1	Infineon Technologies AG	MOSFET P-Ch -60V -8.8A DPAK-2 RoHS: Compliant	4365	1:$0.9100 10:$0.7560 100:$0.4880 1000:$0.3910 2500:$0.3300 10000:$0.3170 25000:$0.3050
SPD08P06P G DISTI # 726-SPD08P06PG	Infineon Technologies AG	MOSFET P-Ch -60V -8.8A DPAK-2 RoHS: Compliant	5585	1:$0.9100 10:$0.7560 100:$0.4880 1000:$0.3910 2500:$0.3300 10000:$0.3170 25000:$0.3050
SPD08P06PGXT DISTI # 726-SPD08P06PGXT	Infineon Technologies AG	MOSFET P-Ch -60V -8.8A DPAK-2	2466	1:$0.9100 10:$0.7560 100:$0.4880 1000:$0.3910 2500:$0.3300 10000:$0.3170 25000:$0.3050
SPD08P06PGBTMA1	Infineon Technologies AG	Single P-Channel 60 V 300 mOhm 10 nC SIPMOS Power Mosfet - TO-252-3 RoHS: Not Compliant	5000Reel	2500:$0.2550
SPD08P06PGBTMA1 DISTI # 4623247	Infineon Technologies AG	MOSFET P-CHANNEL 60V 8.83A TO252, PK	530	1250:£0.2760 630:£0.3380 130:£0.3990 30:£0.4600 10:£0.5230
SPD08P06PGBTMA1 DISTI # 4623247P	Infineon Technologies AG	MOSFET P-CHANNEL 60V 8.83A TO252, RL	2145	1250:£0.2760 630:£0.3380 130:£0.3990 30:£0.4600
SPD08P06PGBTMA1 DISTI # SPD08P06PGBTMA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-60V,-8.8A,42W,PG-TO252-3	2480	100:$0.3600 25:$0.4200 5:$0.4700 1:$0.5700
SPD08P06PGBTMA1 DISTI # 2212864	Infineon Technologies AG	MOSFET, P-CH, 60V, 8.83A, DPAK	0	500:£0.2980 250:£0.3380 100:£0.3790 10:£0.6430 1:£0.8100
SPD08P06PGBTMA1 DISTI # 2212864	Infineon Technologies AG	MOSFET, P-CH, 60V, 8.83A, DPAK RoHS: Compliant	19	1000:$0.5960 500:$0.7550 100:$0.9140 10:$1.1800 1:$1.3100
SPD08P06PGBTMA1 DISTI # XSFP00000140091	Infineon Technologies AG	RoHS: Compliant	5000 in Stock0 on Order	5000:$0.3400 2500:$0.3643

सम्बन्धित उत्पादनहरु

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	Mfr.#: AD5245BRJZ100-RL7 OMO.#: OMO-AD5245BRJZ100-RL7-ANALOG-DEVICES-INC-ADI	Digital Potentiometer ICs IC 256-pos I2C
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उपलब्धता

स्टक:: Available
अर्डर मा:: 1987
मात्रा प्रविष्ट गर्नुहोस्:

SPD08P06PGBTMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.९१~~; ~~US$ ०.९१~~

10: ~~US$ ०.७६~~; ~~US$ ७.५६~~

100: ~~US$ ०.४९~~; ~~US$ ४८.८०~~

1000: ~~US$ ०.३९~~; ~~US$ ३९१.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SPD08P06PG 5
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SPD08P06PGBTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes