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IPZA60R060P7XKSA1

IPZA60R060P7XKSA1
Mfr. #:
IPZA60R060P7XKSA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET HIGH POWER_NEW
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPZA60R060P7XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPZA60R060P7XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
PG-TO-247-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
48 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
49 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
67 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
164 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
ट्रान्जिस्टर प्रकार:
पावर MOSFET
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
4 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
240
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
79 ns
सामान्य टर्न-अन ढिलाइ समय:
23 ns
भाग # उपनाम:
IPZA60R060P7 SP001707738
Tags
IPZA60R0, IPZA, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 60 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
***et
Trans MOSFET N-CH 650V 48A 4-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 600V 48A Tube
***ronik
N-CH 600V 48A 49mOhm TO247-4
***i-Key
MOSFET TO247-4
***ark
Mosfet, N-Ch, 600V, 48A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 48A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:164W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 48A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:48A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.049ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:164W; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
भाग # Mfg। विवरण स्टक मूल्य
IPZA60R060P7XKSA1
DISTI # V99:2348_18786392		Infineon Technologies AG600V CoolMOS¿P7 Power Transistor0
    IPZA60R060P7XKSA1
    DISTI # IPZA60R060P7XKSA1-ND    		Infineon Technologies AGMOSFET TO247-4
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		163In Stock
    • 1200:$4.2746
    • 720:$4.9078
    • 240:$5.8578
    • 10:$7.1240
    • 1:$7.9200
    IPZA60R060P7XKSA1
    DISTI # SP001707738    		Infineon Technologies AGTrans MOSFET N-CH 650V 48A 4-Pin TO-247 Tube (Alt: SP001707738)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 240
    • 1:€4.2900
    • 10:€3.8900
    • 25:€3.7900
    • 50:€3.5900
    • 100:€3.4900
    • 500:€3.3900
    • 1000:€3.0900
    IPZA60R060P7XKSA1
    DISTI # IPZA60R060P7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 48A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZA60R060P7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$4.0900
    • 480:$3.8900
    • 960:$3.7900
    • 1440:$3.6900
    • 2400:$3.5900
    IPZA60R060P7XKSA1
    DISTI # 57AC6818    		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes157
    • 500:$4.4600
    • 250:$4.8900
    • 100:$5.1200
    • 50:$5.5100
    • 25:$5.9000
    • 10:$6.1800
    • 1:$6.8400
    IPZA60R060P7XKSA1
    DISTI # 726-IPZA60R060P7XKSA    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		153
    • 1:$6.8400
    • 10:$6.1800
    • 25:$5.9000
    • 100:$5.1200
    • 250:$4.8900
    • 500:$4.4600
    IPZA60R060P7XKSA1
    DISTI # 2862299    		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-247
    RoHS: Compliant    		157
    • 720:$7.2900
    • 240:$8.7000
    • 10:$10.5800
    • 1:$11.7600
    IPZA60R060P7XKSA1
    DISTI # XSKDRABS0006553    		Infineon Technologies AG 
    RoHS: Compliant    		180 in Stock0 on Order
    • 180:$5.3520
    • 150:$5.7360
    IPZA60R060P7XKSA1
    DISTI # 2862299    		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-247
    RoHS: Compliant    		167
    • 100:£4.5700
    • 50:£5.0700
    • 10:£5.5600
    • 5:£6.1700
    • 1:£6.7300
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    स्टक:
    106
    अर्डर मा:
    2089
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